Inventor · disambiguated record
Wen Zhang Lin
Also filed as: Lin wen-zhang
12 granted patents·2 pending applications·47 citations·filing 2014–2025
87Inventor score
Top patents by PatentIndex Score
14 records- 0196US12051466B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·2 cites·20 claims
- 0294US11646079B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·4 cites·13 claims
- 0391US9431734B2Receptacle connector connected to a printed circuit boardHON HAI PREC IND CO LTD·Filed 2014·Granted Aug 30, 2016·22 cites·18 claims
- 0487US9112299B2Waterproof electrical connector and method for making the sameHON HAI PREC IND CO LTD·Filed 2014·Granted Aug 18, 2015·18 cites·17 claims
- 0587US2025364047A1Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0686US12424279B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·19 claims
- 0785US12426517B2Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 0882US2025359489A1Resistive memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0975US12041860B2Resistive memory device and method for manufacturing with protrusion of electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 1052US11943936B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 1150US9397449B2Receptacle connector flexibly connected to a mother boardHON HAI PREC IND CO LTD·Filed 2014·Granted Jul 19, 2016·1 cites·15 claims
- 1248US10770142B2Memory deviceUNIV NAT TSING HUA·Filed 2018·Granted Sep 8, 2020·0 cites·6 claims
- 1347US10607698B2Control circuit configured to terminate a set operation and a reset operation of a resistive memory cell of memory array based on the voltage variation on the data line of the resistive memory cellUNIV NAT TSING HUA·Filed 2018·Granted Mar 31, 2020·0 cites·3 claims
- 1444US10204681B2Control circuit configured to terminate a set operation and a reset operation of a resistive memory cell of memory array based on the voltage variation on the data line of the resistive memory cellUNIV NAT TSING HUA·Filed 2017·Granted Feb 12, 2019·0 cites·6 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →