Inventor · disambiguated record
Pablo Acosta Alba
Also filed as: ACOSTA ALBA PABLO
10 granted patents·8 pending applications·3 citations·filing 2020–2024
77Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE14COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES3SOITEC SILICON ON INSULATOR1
Top patents by PatentIndex Score
18 records- 0188US11469137B2Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Oct 11, 2022·2 cites·20 claims
- 0277US11195711B2Healing method before transfer of a semiconducting layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Dec 7, 2021·1 cites·16 claims
- 0360US2025022711A1Method for producing a stress state in a semiconductive layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 0457US2024203735A1Method for producing doped transistor source and drainCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 0557US2024194539A1Method for manufacturing a semiconductor deviceCOMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Application pending·0 cites
- 0657US2024194485A1Method for manufacturing a sige channel field effect transistorCOMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Application pending·0 cites
- 0757US2024194538A1Method for manufacturing a semiconductor deviceCOMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Application pending·0 cites
- 0856US2024249945A1Creation of a transistor with close silicide source and drain from the canalCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 0954US2024096621A1Method for the solid phase crystallisation of an amorphous layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 1053US11848191B2RF substrate structure and method of productionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Dec 19, 2023·0 cites·17 claims
- 1153US11769687B2Method for layer transfer with localised reduction of a capacity to initiate a fractureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Sep 26, 2023·0 cites·12 claims
- 1252US12154786B2Method for modifying a strain state of at least one semiconductor layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Nov 26, 2024·0 cites·23 claims
- 1352US2025201625A1Method for transferring a thin film onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 1451US11973118B2Method for forming ohmic contacts, particularly of Ni(GeSn) type implementing laser annealingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Apr 30, 2024·0 cites·18 claims
- 1551US11508613B2Method of healing an implanted layer comprising a heat treatment prior to recrystallisation by laser annealingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Nov 22, 2022·0 cites·13 claims
- 1650US11901194B2Method of forming a porous portion in a substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Feb 13, 2024·0 cites·20 claims
- 1749US12040595B2Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier regionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Jul 16, 2024·0 cites·9 claims
- 1847US11610806B2Multilayer stack of semiconductor-on-insulator type, associated production process, and radio frequency module comprising itCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Mar 21, 2023·0 cites·13 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →