Inventor · disambiguated record
Soo-Cheol Lee
Also filed as: LEE SOO-CHEOL
45 granted patents·4 pending applications·899 citations·filing 1989–2020
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD38CHANG DONG-RYUL2SAMSUNG ELECTRO MECH2GSM KOREA CO LTD1HYUNDAI MOTOR CO LTD1
Top patents by PatentIndex Score
49 records- 0199US5041886ANonvolatile semiconductor memory device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1989·Granted Aug 20, 1991·226 cites·7 claims
- 0289US7482703B2Semiconductor device having align mark layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·21 cites·22 claims
- 0388US7545423B2Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 9, 2009·16 cites·45 claims
- 0487US11505250B2Vehicle sub-frame and method of manufacturing sameHYUNDAI MOTOR CO LTD·Filed 2020·Granted Nov 22, 2022·2 cites·17 claims
- 0586US6927452B2Semiconductor device having dual isolation structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 9, 2005·36 cites·25 claims
- 0685US6773995B2Double diffused MOS transistor and method for manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 10, 2004·32 cites·19 claims
- 0785US6573563B2SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 3, 2003·42 cites·5 claims
- 0884US7593261B2EEPROM devices and methods of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 22, 2009·9 cites·20 claims
- 0984US7297604B2Semiconductor device having dual isolation structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 20, 2007·11 cites·17 claims
- 1083US7808468B2Source driver for controlling a slew rate and a method for controlling the slew rateSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 5, 2010·14 cites·19 claims
- 1182US7378708B2Transistor having a protruded drainSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 27, 2008·6 cites·7 claims
- 1280US5073513AManufacture of a nonvolatile semiconductor memory device having a sidewall select gateSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Dec 17, 1991·43 cites·17 claims
- 1379US7671831B2Output buffer with improved output deviation and source driver for flat panel display having the output bufferSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 2, 2010·11 cites·24 claims
- 1477US7304387B2Semiconductor integrated circuit deviceSAMSUNG ELECRONICS CO LTD·Filed 2006·Granted Dec 4, 2007·6 cites·13 claims
- 1577US6552438B2Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 22, 2003·34 cites·29 claims
- 1676US5936296AIntegrated circuits having metallic fuse linksSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 10, 1999·49 cites·12 claims
- 1775US6348730B1Semiconductor device and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Feb 19, 2002·20 cites·4 claims
- 1875US5821590ASemiconductor interconnection device with both n- and p-doped regionsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 13, 1998·42 cites·8 claims
- 1974US6465337B1Methods of fabricating integrated circuit bonding pads including intermediate closed conductive layers having spaced apart insulating islands thereinSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 15, 2002·18 cites·5 claims
- 2074US6163074AIntegrated circuit bonding pads including intermediate closed conductive layers having spaced apart insulating islands thereinSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 19, 2000·39 cites·49 claims
- 2170US7419880B2Transistor having a protruded drainSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 2, 2008·2 cites·6 claims
- 2270US5206786AThrough type condenserSAMSUNG ELECTRO MECH·Filed 1991·Granted Apr 27, 1993·31 cites·18 claims
- 2368US8058185B2Method of fabricating semiconductor integrated circuit deviceCHANG DONG-RYUL·Filed 2007·Granted Nov 15, 2011·3 cites·14 claims
- 2468US6202796B1Elevator position controlling apparatus and methodLG IND SYSTEMS CO LTD·Filed 1999·Granted Mar 20, 2001·26 cites·7 claims
- 2564US6274906B1MOS transistor for high-speed and high-performance operation and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 14, 2001·20 cites·20 claims
- 2664US5142436APiercing through type capacitorSAMSUNG ELECTRO MECH·Filed 1991·Granted Aug 25, 1992·27 cites·20 claims
- 2760US8050091B2EEPROM devices and methods of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 1, 2011·1 cites·20 claims
- 2860US7193271B2Transistor having a protruded drainSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 20, 2007·5 cites·6 claims
- 2958US6482662B1Semiconductor device fabricating methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 19, 2002·6 cites·16 claims
- 3058US5149664ASelf-aligning ion-implantation method for semiconductor device having multi-gate type MOS transistor structureSAMSUNG EECTRONICS CO LTD·Filed 1989·Granted Sep 22, 1992·17 cites·17 claims
- 3157US6286628B1Non-linear load detection and compensation for elevatorsLG OTIS ELEVATOR CO·Filed 2000·Granted Sep 11, 2001·9 cites·11 claims
- 3254US6486053B2Semiconductor device and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 26, 2002·5 cites·5 claims
- 3352US6924530B2Double diffused MOS transistor and method for manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 2, 2005·4 cites·10 claims
- 3452US6232189B1Manufacturing method of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted May 15, 2001·17 cites·13 claims
- 3551US6836399B2Integrated circuit metal-insulator-metal capacitors formed of pairs of capacitors connected in antiparallelSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 28, 2004·8 cites·25 claims
- 3648US2012032269A1Semiconductor integrated circuit device and method for fabricating the sameCHANG DONG-RYUL·Filed 2011·Application pending·0 cites
- 3746US5742078AIntegrated circuit SRAM cell layoutsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 21, 1998·12 cites·19 claims
- 3846US2005263764A1CMOS imaging device having an improved fill factorKIM KI-HONG·Filed 2005·Application pending·0 cites
- 3945US6461924B2MOS transistor for high-speed and high-performance operation and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 8, 2002·2 cites·5 claims
- 4043US7446000B2Method of fabricating semiconductor device having gate dielectrics with different thicknessesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 4, 2008·0 cites·20 claims
- 4143US5989968AMethod of making bipolar transistor having reduced resistanceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Nov 23, 1999·7 cites·15 claims
- 4242USRE36440EIntegrated circuit SRAM cell layoutsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Dec 14, 1999·6 cites·19 claims
- 4342US2006284219A1Semiconductor integrated circuit device method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4441US6020641AMultilevel interconnection with low contact resistance in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Feb 1, 2000·8 cites·3 claims
- 4536US7525847B2Semiconductor device and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 28, 2009·0 cites·26 claims
- 4633US6171950B1Method for forming a multilevel interconnection with low contact resistance in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 9, 2001·3 cites·6 claims
- 4732US5837602AMethod of manufacturing doped interconnectSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Nov 17, 1998·2 cites·6 claims
- 4828US5982007ASemiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Nov 9, 1999·1 cites·4 claims
- 4926US2017215932A1Adjustable implant for fixing femurGSM KOREA CO LTD·Filed 2016·Application pending·0 cites
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