Inventor · disambiguated record

Kousuke Ishibashi

Also filed as: ISHIBASHI KOUSUKE

1 granted patent·14 citations·filing 2002–2002

35Inventor score

Technology areasH10D

Files withRENESAS TECH CORP1

Top patents by PatentIndex Score

1 record

0163US7205617B2Semiconductor device including active regions and gate electrodes for field effect transistors, with a trench formed between the active regionsRENESAS TECH CORP·Filed 2002·Granted Apr 17, 2007·14 cites·7 claims

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