Inventor · disambiguated record

Chang-Yin Chen

Also filed as: Chen chang-yin

75 granted patents·21 pending applications·171 citations·filing 2010–2025

98Inventor score

Technology areasH10P H10D H10W H01L F28D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD80 Chen chang-yin5 COOLER MASTER CO LTD4 LIN CHUN-HUNG3 CHANG CHE-CHENG1

Top patents by PatentIndex Score

96 records

0196US10700180B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·8 cites·20 claims
0295US10262870B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 16, 2019·13 cites·20 claims
0394US10096712B2FinFET device and method of forming and monitoring quality of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 9, 2018·7 cites·20 claims
0494US9627375B2Indented gate end of non-planar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 18, 2017·16 cites·20 claims
0593US11527636B2Semiconductor device structure with work function layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·2 cites·20 claims
0693US11328962B2Notched gate structure fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·2 cites·20 claims
0792US12125891B2Semiconductor device having gate spacers extending below a fin top surfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·2 cites·20 claims
0892US10854519B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·6 cites·20 claims
0992US10355135B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·5 cites·20 claims
1092US10312352B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·4 cites·20 claims
1192US10050128B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·5 cites·18 claims
1292US9653605B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 16, 2017·6 cites·19 claims
1391US10134861B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 20, 2018·6 cites·20 claims
1491US9991285B2Mechanisms for forming FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 5, 2018·8 cites·20 claims
1591US9620417B2Apparatus and method of manufacturing fin-FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·8 cites·19 claims
1691US9508719B2Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 29, 2016·9 cites·20 claims
1791US2025331280A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1890US9577067B2Metal gate and manufuacturing process thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·10 cites·18 claims
1988US12408411B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
2088US9627512B2Field effect transistor with non-doped channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 18, 2017·5 cites·19 claims
2188US9620621B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·5 cites·20 claims
2287US10811536B2FinFET device and method of forming and monitoring quality of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 20, 2020·3 cites·21 claims
2387US10164107B2Embedded source or drain region of transistor with laterally extended portionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 25, 2018·5 cites·20 claims
2486US11522084B2FinFET device and method of forming and monitoring quality of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
2586US9520474B2Methods of forming a semiconductor device with a gate stack having tapered sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 13, 2016·5 cites·20 claims
2686US2023352592A1Fin Field Effect Transistor (FinFET) Device and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2785US11380590B2Mechanisms for forming FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·1 cites·20 claims
2885US9773696B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 26, 2017·5 cites·5 claims
2984US12261051B2Semiconductor device with fin isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
3084US10840153B2Notched gate structure fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·2 cites·20 claims
3184US10763341B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·2 cites·20 claims
3284US10269651B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 23, 2019·3 cites·20 claims
3384US10177238B2High-K film apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 8, 2019·3 cites·20 claims
3484US2024322009A1Semiconductor device structure with work function layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3580US12002871B2Semiconductor device structure with work function layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
3680US10818794B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·1 cites·20 claims
3780US10535758B2Gate structure of field effect transistor with footingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 14, 2020·1 cites·20 claims
3880US9401415B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 26, 2016·5 cites·13 claims
3979US12211750B2Mechanisms for forming FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
4079US2025174463A1Method for forming semiconductor device with fin isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4178US11854825B2Gate structure of semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
4278US11784055B2Method of forming semiconductor device with fin isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
4378US2024204105A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4477US12218216B2Method for manufacturing semiconductor devices having gate spacers with bottom portions recessed in a finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
4577US11842932B2Notched gate structure fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
4677US11721762B2Fin field effect transistor (FinFET) device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
4776US10672796B2Mechanisms for forming FINFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·1 cites·20 claims
4876US9147736B2High-K film apparatus and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 29, 2015·2 cites·19 claims
4975US12237417B2FinFET device and method of forming and monitoring quality of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
5075US11929419B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 12, 2024·0 cites·20 claims

Showing the top 50 of 96 patent records by PatentIndex Score.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →