Inventor · disambiguated record
Jai-Kwang Shin
Also filed as: SHIN JAI-KWANG
85 granted patents·13 pending applications·311 citations·filing 2002–2015
99Inventor score
Top patents by PatentIndex Score
98 records- 0194US9525410B2Power management chips and power management devices including the sameKIM HO-JUNG·Filed 2012·Granted Dec 20, 2016·22 cites·13 claims
- 0293US9117890B2High-electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 25, 2015·17 cites·17 claims
- 0393US8860089B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 14, 2014·15 cites·21 claims
- 0492US8816396B2E-mode high electron mobility transistor and method of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Aug 26, 2014·15 cites·14 claims
- 0590US7208878B2Method of manufacturing a rotation-magnetron-in-magnetron (RMIM) electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 24, 2007·13 cites·16 claims
- 0688US9443968B2High electron mobility transistors including lightly doped drain regions and methods of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Sep 13, 2016·10 cites·30 claims
- 0786US9231093B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 5, 2016·8 cites·26 claims
- 0886US9053964B2Semiconductor devices including a first and second HFET and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 9, 2015·8 cites·25 claims
- 0985US9245738B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 26, 2016·6 cites·16 claims
- 1083US8772834B2High electron mobility transistor and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 8, 2014·5 cites·39 claims
- 1182US8796737B2High electron mobility transistors and methods of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted Aug 5, 2014·5 cites·25 claims
- 1282US8497703B2Reconfigurable logic devicesKIM HO-JUNG·Filed 2011·Granted Jul 30, 2013·6 cites·26 claims
- 1382US8203863B2Nonvolatile memory cells and nonvolatile memory devices including the sameKIM HO-JUNG·Filed 2010·Granted Jun 19, 2012·8 cites·21 claims
- 1482US8084371B2Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistorSEO DAVID·Filed 2010·Granted Dec 27, 2011·5 cites·19 claims
- 1581US8890212B2Normally-off high electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 18, 2014·5 cites·18 claims
- 1681US7936028B2Spin field effect transistor using half metal and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 3, 2011·8 cites·20 claims
- 1780US8638163B2Semiconductor device and method of operating the semiconductor deviceKIM HO-JUNG·Filed 2012·Granted Jan 28, 2014·5 cites·26 claims
- 1880US8471640B2Oscillators and methods of operating the sameCHOI HYUN-SIK·Filed 2011·Granted Jun 25, 2013·5 cites·19 claims
- 1979US8269293B2Spin transistor and method of operating the sameHONG KI-HA·Filed 2008·Granted Sep 18, 2012·7 cites·29 claims
- 2079US8263449B2Method of manufacturing high electron mobility transistorHONG KI-HA·Filed 2011·Granted Sep 11, 2012·5 cites·12 claims
- 2178US9660048B2High electron mobility transistors exhibiting dual depletion and methods of manufacturing the sameHWANG IN-JUN·Filed 2011·Granted May 23, 2017·5 cites·3 claims
- 2278US7119489B2Rotation-magnetron-in-magnetron (RMIM) electrode, method of manufacturing the RMIM electrode, and sputtering apparatus including the RMIM electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 10, 2006·12 cites·18 claims
- 2377US9306544B2Electronic device including transistor and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 5, 2016·4 cites·36 claims
- 2477US8878246B2High electron mobility transistors and methods of fabricating the sameHWANG IN-JUN·Filed 2011·Granted Nov 4, 2014·3 cites·8 claims
- 2577US8310014B2Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistorSEO DAVID·Filed 2011·Granted Nov 13, 2012·3 cites·3 claims
- 2676US7381292B2Inductively coupled plasma generating apparatus incorporating serpentine coil antennaSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 3, 2008·12 cites·24 claims
- 2775US9087704B2Semiconductor devices and methods of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 21, 2015·4 cites·44 claims
- 2875US8503220B2Semiconductor device and method of sensing data of the semiconductor deviceKIM HO-JUNG·Filed 2011·Granted Aug 6, 2013·5 cites·27 claims
- 2974US7476868B2Apparatus and method for generating ions of an ion implanterSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 13, 2009·3 cites·9 claims
- 3073US9147738B2High electron mobility transistor including plurality of gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 29, 2015·3 cites·27 claims
- 3173US7566514B2Catalyst for cathode in fuel cellSAMSUNG SDI CO LTD·Filed 2003·Granted Jul 28, 2009·10 cites·13 claims
- 3272US7910913B2Phase change memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 22, 2011·5 cites·16 claims
- 3371US9252255B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 2, 2016·2 cites·17 claims
- 3471US9245947B2High electron mobility transistors and methods of manufacturing the sameHWANG IN-JUN·Filed 2012·Granted Jan 26, 2016·2 cites·18 claims
- 3571US8385098B2Ferroelectric memory devices and operating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 26, 2013·3 cites·24 claims
- 3671US7977707B2Capacitorless DRAM having a hole reserving unitSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 12, 2011·3 cites·22 claims
- 3770US9082693B2Nitride semiconductor based power converting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 14, 2015·2 cites·16 claims
- 3868US9379102B2Nitride-based semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 28, 2016·2 cites·6 claims
- 3968US8513705B2Power electronic devices, methods of manufacturing the same, and integrated circuit modules including the sameKIM JONG-SEOB·Filed 2010·Granted Aug 20, 2013·4 cites·13 claims
- 4068US7955562B2Chemical sensor using thin-film sensing memberSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 7, 2011·7 cites·10 claims
- 4166US9461637B2Method and apparatus for controlling a gate voltage in high electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 4, 2016·2 cites·19 claims
- 4266US8508194B2Semiconductor deviceKIM HO-JUNG·Filed 2010·Granted Aug 13, 2013·2 cites·20 claims
- 4366US8294134B2Phase change memory devices having a current increase unitCHOI HYUK-SOON·Filed 2010·Granted Oct 23, 2012·2 cites·17 claims
- 4465US9231057B2Power switching device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 5, 2016·1 cites·11 claims
- 4565US8907377B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 9, 2014·1 cites·32 claims
- 4664US8487358B2Spin field effect logic devicesHONG KI-HA·Filed 2009·Granted Jul 16, 2013·2 cites·6 claims
- 4764US7978006B2Quantum interference transistors and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·2 cites·20 claims
- 4863US9570597B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 14, 2017·1 cites·13 claims
- 4963US8509430B2Storage devices having a security function and methods of securing data stored in the storage deviceKIM HO-JUNG·Filed 2010·Granted Aug 13, 2013·1 cites·25 claims
- 5063US8004906B2Nonvolatile memory device and method of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 23, 2011·2 cites·23 claims
Showing the top 50 of 98 patent records by PatentIndex Score.
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