Inventor · disambiguated record
Alejandro G. Schrott
Also filed as: SCHROTT ALEJANDRO G · SCHROTT ALEJANDRO GABRIEL
128 granted patents·17 pending applications·4,783 citations·filing 1992–2019
99Inventor score
Top patents by PatentIndex Score
145 records- 0199US6249227B1RFID integrated in electronic assetsINTERMEC IP CORP·Filed 1998·Granted Jun 19, 2001·443 cites·7 claims
- 0298US7046550B1Cross-point memory architecture with improved selectivityIBM·Filed 2005·Granted May 16, 2006·94 cites·17 claims
- 0398US5789320APlating of noble metal electrodes for DRAM and FRAMIBM·Filed 1996·Granted Aug 4, 1998·326 cites·29 claims
- 0498US5755859ACobalt-tin alloys and their applications for devices, chip interconnections and packagingIBM·Filed 1995·Granted May 26, 1998·405 cites·9 claims
- 0597US8338225B2Method to reduce a via area in a phase change memory cellBREITWISCH MATTHEW J·Filed 2012·Granted Dec 25, 2012·30 cites·14 claims
- 0697US7514705B2Phase change memory cell with limited switchable volumeIBM·Filed 2006·Granted Apr 7, 2009·55 cites·13 claims
- 0797US6335685B1Apparatus and method for locating containers and contents of containers using radio frequency tagsIBM·Filed 2000·Granted Jan 1, 2002·217 cites·20 claims
- 0897US6226619B1Method and system for preventing counterfeiting of high price wholesale and retail itemsIBM·Filed 1998·Granted May 1, 2001·355 cites·33 claims
- 0996US7560721B1Phase change material with filament electrodeIBM·Filed 2008·Granted Jul 14, 2009·42 cites·15 claims
- 1095US8921820B2Phase change memory cell with large electrode contact areaIBM·Filed 2012·Granted Dec 30, 2014·11 cites·12 claims
- 1195US8138028B2Method for manufacturing a phase change memory device with pillar bottom electrodeLUNG HSIANG LAN·Filed 2007·Granted Mar 20, 2012·25 cites·27 claims
- 1295US7501648B2Phase change materials and associated memory devicesIBM·Filed 2006·Granted Mar 10, 2009·23 cites·35 claims
- 1395US7488967B2Structure for confining the switching current in phase memory (PCM) cellsIBM·Filed 2005·Granted Feb 10, 2009·40 cites·6 claims
- 1495US5939984ACombination radio frequency transponder (RF Tag) and magnetic electronic article surveillance (EAS) materialINTERMEC IP CORP·Filed 1998·Granted Aug 17, 1999·211 cites·11 claims
- 1594US9166161B2Phase change memory cell with large electrode contact areaIBM·Filed 2014·Granted Oct 20, 2015·9 cites·8 claims
- 1694US7485487B1Phase change memory cell with electrodeIBM·Filed 2008·Granted Feb 3, 2009·28 cites·17 claims
- 1794US6397334B1Method and system for authenticating objects and object dataIBM·Filed 1998·Granted May 28, 2002·199 cites·59 claims
- 1894US5812065AModulation of the resonant frequency of a circuit using an energy fieldIBM·Filed 1995·Granted Sep 22, 1998·179 cites·56 claims
- 1993US9111609B2Concentric phase change memory elementHAPP THOMAS D·Filed 2012·Granted Aug 18, 2015·11 cites·9 claims
- 2093US8471236B2Flat lower bottom electrode for phase change memory cellBREITWISCH MATTHEW J·Filed 2012·Granted Jun 25, 2013·12 cites·9 claims
- 2193US7473921B2Nonvolatile memory cell with concentric phase change material formed around a pillar arrangementIBM·Filed 2006·Granted Jan 6, 2009·26 cites·1 claims
- 2292US9851287B2Size distribution determination of aerosols using hyperspectral image technology and analyticsIBM·Filed 2016·Granted Dec 26, 2017·4 cites·19 claims
- 2392US7825460B2Vertical field effect transistor arrays and methods for fabrication thereofIBM·Filed 2006·Granted Nov 2, 2010·16 cites·5 claims
- 2492US6744087B2Non-volatile memory using ferroelectric gate field-effect transistorsIBM·Filed 2002·Granted Jun 1, 2004·69 cites·10 claims
- 2592US5680106AMultibit tag with stepwise variable frequenciesIBM·Filed 1995·Granted Oct 21, 1997·187 cites·24 claims
- 2691US8946073B2Phase change memory cell with large electrode contact areaIBM·Filed 2013·Granted Feb 3, 2015·6 cites·10 claims
- 2791US7868313B2Phase change memory device and method of manufactureIBM·Filed 2008·Granted Jan 11, 2011·25 cites·14 claims
- 2891US5821859AConcealed magnetic ID code and antitheft tagIBM·Filed 1996·Granted Oct 13, 1998·149 cites·15 claims
- 2990US7791057B2Memory cell having a buried phase change region and method for fabricating the sameMACRONIX INT CO LTD·Filed 2008·Granted Sep 7, 2010·24 cites·19 claims
- 3089US8105859B2In via formed phase change memory cell with recessed pillar heaterBREITWISCH MATTHEW J·Filed 2009·Granted Jan 31, 2012·16 cites·8 claims
- 3188US8633464B2In via formed phase change memory cell with recessed pillar heaterBREITWISCH MATTHEW J·Filed 2012·Granted Jan 21, 2014·7 cites·8 claims
- 3288US8030130B2Phase change memory device with plated phase change materialIBM·Filed 2009·Granted Oct 4, 2011·14 cites·16 claims
- 3388US7875873B2Phase change materials and associated memory devicesIBM·Filed 2008·Granted Jan 25, 2011·6 cites·20 claims
- 3488US6130612AAntenna for RF tag with a magnetoelastic resonant coreINTERMEC IP CORP·Filed 1999·Granted Oct 10, 2000·117 cites·21 claims
- 3587US8283650B2Flat lower bottom electrode for phase change memory cellBREITWISCH MATTHEW J·Filed 2009·Granted Oct 9, 2012·12 cites·5 claims
- 3687US6365913B1Dual gate field effect transistor utilizing Mott transition materialsIBM·Filed 1999·Granted Apr 2, 2002·54 cites·40 claims
- 3786US9179610B2Controllable emitterIBM·Filed 2013·Granted Nov 10, 2015·6 cites·13 claims
- 3886US8330137B2Pore phase change material cell fabricated from recessed pillarSCHROTT ALEJANDRO G·Filed 2011·Granted Dec 11, 2012·6 cites·20 claims
- 3986US8110901B2Vertical field effect transistor arrays including gate electrodes annularly surrounding semiconductor pillarsBREITWISCH MATTHEW J·Filed 2010·Granted Feb 7, 2012·6 cites·8 claims
- 4086US7491573B1Phase change materials for applications that require fast switching and high enduranceIBM·Filed 2008·Granted Feb 17, 2009·12 cites·1 claims
- 4186US7123129B1Modulation of the resonant frequency of a circuit using an energy fieldINTERMEC IP CORP·Filed 2003·Granted Oct 17, 2006·42 cites·50 claims
- 4286US6426536B1Double layer perovskite oxide electrodesIBM·Filed 2001·Granted Jul 30, 2002·35 cites·9 claims
- 4385US10561077B2Pressure driven irrigation systemIBM·Filed 2016·Granted Feb 18, 2020·3 cites·18 claims
- 4485US6426012B1Wet chemical etch process for patterning MRAM magnetic layersIBM·Filed 2000·Granted Jul 30, 2002·33 cites·22 claims
- 4585US6115616AHand held telephone set with separable keyboardIBM·Filed 1998·Granted Sep 5, 2000·115 cites·11 claims
- 4684US7960203B2Pore phase change material cell fabricated from recessed pillarIBM·Filed 2008·Granted Jun 14, 2011·9 cites·18 claims
- 4784US7479671B2Thin film phase change memory cell formed on silicon-on-insulator substrateIBM·Filed 2006·Granted Jan 20, 2009·12 cites·19 claims
- 4884US5729201AIdentification tags using amorphous wireIBM·Filed 1995·Granted Mar 17, 1998·80 cites·5 claims
- 4983US8680501B2Memory cell with post deposition method for regrowth of crystalline phase change materialIBM·Filed 2013·Granted Mar 25, 2014·4 cites·9 claims
- 5083US7989796B2Nonvolatile memory cell with concentric phase change material formed around a pillar arrangementIBM·Filed 2008·Granted Aug 2, 2011·9 cites·20 claims
Showing the top 50 of 145 patent records by PatentIndex Score.
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