Inventor · disambiguated record
Suk-Pil Kim
Also filed as: KIM SUK-PIL
60 granted patents·22 pending applications·921 citations·filing 1999–2013
99Inventor score
Top patents by PatentIndex Score
82 records- 0199US7622761B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 24, 2009·247 cites·13 claims
- 0297US7910909B2Non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 22, 2011·50 cites·18 claims
- 0397US7700935B2Non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·43 cites·13 claims
- 0495US8625016B2Image sensors having multiple photoelectric conversion devices thereinFOSSUM ERIC·Filed 2010·Granted Jan 7, 2014·61 cites·17 claims
- 0595US8124968B2Non-volatile memory deviceKOO JUNE-MO·Filed 2009·Granted Feb 28, 2012·91 cites·7 claims
- 0695US8017991B2Non-volatile memory device and methods of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 13, 2011·35 cites·26 claims
- 0795US7352037B2Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 1, 2008·32 cites·21 claims
- 0893US8570409B2Image sensors and methods of manufacturing image sensorsCHOI SANG-JUN·Filed 2010·Granted Oct 29, 2013·17 cites·10 claims
- 0993US7863672B2Non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 4, 2011·24 cites·25 claims
- 1093US7598095B2Ferroelectric memory and ferroelectric capacitor with Ir-alloy electrode or Ru-alloy electrode and method of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 6, 2009·25 cites·22 claims
- 1193US7514325B2Fin-FET having GAA structure and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 7, 2009·23 cites·16 claims
- 1292US9318573B2Field effect transistor having germanium nanorod and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 19, 2016·15 cites·13 claims
- 1391US7948024B2Multi-layered, vertically stacked non-volatile memory device and method of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 24, 2011·16 cites·7 claims
- 1491US7663166B2Wire-type semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 16, 2010·19 cites·7 claims
- 1590US7560344B2Semiconductor device having a pair of fins and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·15 cites·12 claims
- 1687US7419859B2Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 2, 2008·13 cites·20 claims
- 1786US8274067B2Memory devices and methods of manufacturing the sameAHN SEUNG-EON·Filed 2008·Granted Sep 25, 2012·10 cites·28 claims
- 1884US8120006B2Non-volatile memory deviceKIM SUK-PIL·Filed 2009·Granted Feb 21, 2012·13 cites·20 claims
- 1984US7932551B2Nonvolatile memory device and method of fabricating the same comprising a dual fin structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 26, 2011·11 cites·20 claims
- 2083US7436704B2Non-volatile memory devices and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·14 cites·26 claims
- 2182US7679960B2Non-volatile memory device and method of operating the sameSAMSUNG ELECRONICS CO LTD·Filed 2007·Granted Mar 16, 2010·10 cites·22 claims
- 2281US7910967B2Ferroelectric capacitor having three-dimensional structure, nonvolatile memory device having the same and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 22, 2011·7 cites·26 claims
- 2381US7652308B2Semiconductor device having gate-all-around structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 26, 2010·9 cites·28 claims
- 2480US7807517B2Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 5, 2010·7 cites·15 claims
- 2579US7729164B2Non-volatile memory device, method of operating the same, and method of fabricating the sameSAMSUNG ELCTRONICS CO LTD·Filed 2008·Granted Jun 1, 2010·7 cites·38 claims
- 2678US9219168B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 22, 2015·3 cites·13 claims
- 2778US7829932B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 9, 2010·8 cites·6 claims
- 2877US8937711B2Sensor and method using the sameKIM SUK PIL·Filed 2011·Granted Jan 20, 2015·6 cites·19 claims
- 2977US8053822B2Capacitorless DRAM and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 8, 2011·6 cites·28 claims
- 3077US7833890B2Semiconductor device having a pair of fins and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 16, 2010·5 cites·13 claims
- 3177US7662678B2Method of forming a more highly-oriented silicon layer and substrate having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 16, 2010·5 cites·27 claims
- 3276US7750393B2Non-volatile memory device with independent channel regions adjacent different sides of a common control gateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 6, 2010·6 cites·13 claims
- 3375US8283711B2Non-volatile memory devices having data storage layerJIN YOUNG-GU·Filed 2008·Granted Oct 9, 2012·9 cites·18 claims
- 3474US7674661B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 9, 2010·6 cites·7 claims
- 3573US7796432B2Non-volatile memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 14, 2010·8 cites·20 claims
- 3671US8159017B2Non-volatile memory device and method of manufacturing the sameSEOL KWANG-SOO·Filed 2009·Granted Apr 17, 2012·3 cites·9 claims
- 3771US7675779B2Non-volatile memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 9, 2010·7 cites·31 claims
- 3870US7947590B2Method of manufacturing a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 24, 2011·3 cites·11 claims
- 3969US7274513B2Off-axis projection optics and extreme ultraviolet lithography apparatus employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 25, 2007·2 cites·9 claims
- 4068US7518181B2Semiconductor memory device and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 14, 2009·3 cites·8 claims
- 4163US8064254B2Columnar non-volatile memory devices with auxiliary transistors and methods of operating the sameKIM SUK-PIL·Filed 2009·Granted Nov 22, 2011·2 cites·19 claims
- 4263US7813180B2Non-volatile memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 12, 2010·2 cites·22 claims
- 4363US7551491B2Unit cell of a non-volatile memory device, a non-volatile memory device and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 23, 2009·5 cites·22 claims
- 4463US7301694B2Off-axis projection optical system and extreme ultraviolet lithography apparatus using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 27, 2007·1 cites·18 claims
- 4562US7986545B2Non-volatile memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 26, 2011·4 cites·13 claims
- 4662US7439197B2Method of fabricating a capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 21, 2008·1 cites·13 claims
- 4761US7894265B2Non-volatile memory device and operation method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 22, 2011·4 cites·22 claims
- 4860US7745233B2Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 29, 2010·1 cites·16 claims
- 4958US7682758B2Reflection mask for EUV photolithography and method of fabricating the reflection maskSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 23, 2010·2 cites·12 claims
- 5055US2010012186A1Bulb-Type Light Concentrated Solar Cell ModuleSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
Showing the top 50 of 82 patent records by PatentIndex Score.
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