Inventor · disambiguated record
Natsuo Ajika
Also filed as: AJIKA NATSUO
70 granted patents·5 pending applications·2,555 citations·filing 1989–2013
99Inventor score
Files withMITSUBISHI ELECTRIC CORP55GENUSION INC11AJIKA NATSUO4RENESAS TECH CORP3NAKASHIMA MORIYOSHI1
Top patents by PatentIndex Score
75 records- 0198US5355022AStacked-type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Oct 11, 1994·347 cites·10 claims
- 0296US5745417AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 28, 1998·135 cites·26 claims
- 0393US5341028ASemiconductor device and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 23, 1994·143 cites·2 claims
- 0493US5051948AContent addressable memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Sep 24, 1991·81 cites·21 claims
- 0592US5049975AMulti-layered interconnection structure for a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Sep 17, 1991·152 cites·5 claims
- 0690US6172397B1Non-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 9, 2001·83 cites·33 claims
- 0790US5994733ANonvolatile semiconductor memory device and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 30, 1999·84 cites·3 claims
- 0889US5898606AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 27, 1999·63 cites·2 claims
- 0989US5444282ASemiconductor device and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 22, 1995·100 cites·4 claims
- 1088US5659505AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 19, 1997·67 cites·34 claims
- 1188US5504376AStacked-type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Apr 2, 1996·84 cites·11 claims
- 1284US5378643AElectrically programmable non-volatile semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 3, 1995·50 cites·1 claims
- 1383US5877524ANon-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 2, 1999·52 cites·31 claims
- 1482US8492826B2Non-volatile semiconductor memory device and manufacturing method thereofAJIKA NATSUO·Filed 2010·Granted Jul 23, 2013·6 cites·7 claims
- 1581US6107659ANonvolatile semiconductor memory device operable at high speed with low power supply voltage while preventing overerasing/overwritingMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Aug 22, 2000·51 cites·20 claims
- 1681US5538912AMethod of making memory cells with peripheral transistorsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 23, 1996·38 cites·5 claims
- 1781US5194925AElectrically programmable non-volatie semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 16, 1993·45 cites·12 claims
- 1880US6034393ANonvolatile semiconductor memory device using trench isolation and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 7, 2000·60 cites·6 claims
- 1979US7573742B2Nonvolatile semiconductor memoryGENUSION INC·Filed 2006·Granted Aug 11, 2009·8 cites·53 claims
- 2079US5672533AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 30, 1997·37 cites·1 claims
- 2179US5600164ANon-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 4, 1997·43 cites·14 claims
- 2279US5523596ASemiconductor device having capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jun 4, 1996·53 cites·4 claims
- 2379US5218219ASemiconductor memory device having a peripheral wall at the boundary region of a memory cell array region and a peripheral circuit regionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 8, 1993·35 cites·8 claims
- 2478US5554867ANonvolatile semiconductor memory device having a memory cell transistor and a select transistorMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Sep 10, 1996·39 cites·14 claims
- 2576US5381365ADynamic random access memory having stacked type capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 10, 1995·33 cites·5 claims
- 2675US5994732ANonvolatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 30, 1999·36 cites·6 claims
- 2775US5355012ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Oct 11, 1994·39 cites·21 claims
- 2875US5162262AMulti-layered interconnection structure for a semiconductor device and manufactured method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 10, 1992·57 cites·4 claims
- 2974US6014328AMemory cell allowing write and erase with low voltage power supply and nonvolatile semiconductor memory device provided with the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 11, 2000·32 cites·3 claims
- 3074US5597755AMethod of manufacturing a stacked capacitor in a dramMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 28, 1997·25 cites·9 claims
- 3172US8964463B2Read disturb control in a nonvolatile semiconductor memory device having P-type memory cell transistorGENUSION INC·Filed 2013·Granted Feb 24, 2015·4 cites·6 claims
- 3272US5364811AMethod of manufacturing a semiconductor memory device with multiple device forming regionsMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 15, 1994·26 cites·3 claims
- 3372US5141891AMIS-type semiconductor device of LDD structure and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 25, 1992·33 cites·10 claims
- 3471US8106443B2Non-volatile semiconductor memory deviceAJIKA NATSUO·Filed 2008·Granted Jan 31, 2012·3 cites·8 claims
- 3571US5400278ASemiconductor memory device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Mar 21, 1995·24 cites·10 claims
- 3670US4988635AMethod of manufacturing non-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 29, 1991·26 cites·7 claims
- 3769US5798289AMethod of manufacturing stacked capacitors in a DRAM with reduced isolation region between adjacent capacitorsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 25, 1998·20 cites·1 claims
- 3868US6867455B2Semiconductor device with a metal insulator semiconductor transistorRENESAS TECH CORP·Filed 2003·Granted Mar 15, 2005·9 cites·11 claims
- 3967US5489791AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 6, 1996·22 cites·3 claims
- 4066US5978264ANonvolatile semiconductor memory device operable at high speed with low power supply voltage while suppressing increase of chip areaMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 2, 1999·27 cites·20 claims
- 4166US4989054ANon-volatile semiconductor memory device using contact hole connectionMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 29, 1991·19 cites·11 claims
- 4265US8000137B2Nonvolatile semiconductor memory device and usage method thereofGENUSION INC·Filed 2009·Granted Aug 16, 2011·5 cites·20 claims
- 4365US5434439ADynamic random access memory having stacked type capacitor and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jul 18, 1995·18 cites·11 claims
- 4462US5275629ASemiconductor device manufacturing apparatusMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 4, 1994·33 cites·6 claims
- 4561US7924615B2Nonvolatile semiconductor memory deviceGENUSION INC·Filed 2010·Granted Apr 12, 2011·2 cites·12 claims
- 4661US6611459B2Non-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Aug 26, 2003·10 cites·6 claims
- 4761US5276344AField effect transistor having impurity regions of different depths and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 4, 1994·17 cites·27 claims
- 4860US5621689ANonvolatile semiconductor memory device having controlled charge pump loadMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 15, 1997·19 cites·14 claims
- 4960US5240872AMethod of manufacturing semiconductor device having interconnection layer contacting source/drain regionsMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Aug 31, 1993·29 cites·4 claims
- 5059US7723835B2Semiconductor device package structureGENUSION INC·Filed 2008·Granted May 25, 2010·1 cites·18 claims
Showing the top 50 of 75 patent records by PatentIndex Score.
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