Inventor · disambiguated record
Kaoru Motonami
Also filed as: MOTONAMI KAORU
37 granted patents·3 pending applications·629 citations·filing 1991–2015
98Inventor score
Top patents by PatentIndex Score
40 records- 0190US5453952ASemiconductor device having peripheral circuit formed of TFT (thin film transistor)MITSUBISHI ELECTRIC CORP·Filed 1992·Granted Sep 26, 1995·80 cites·22 claims
- 0283US8247867B2Semiconductor deviceNAKATA KAZUNARI·Filed 2010·Granted Aug 21, 2012·8 cites·9 claims
- 0382US6025620ASemiconductor device and method of producing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 15, 2000·47 cites·11 claims
- 0479US5218219ASemiconductor memory device having a peripheral wall at the boundary region of a memory cell array region and a peripheral circuit regionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 8, 1993·35 cites·8 claims
- 0577US5323049ASemiconductor device with an interconnection layer on surface having a step portionMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 21, 1994·37 cites·7 claims
- 0675US5441916AMethod of manufacturing semiconductor device comprising interconnectionMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 15, 1995·33 cites·6 claims
- 0774US5241212ASemiconductor device having a redundant circuit portion and a manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Aug 31, 1993·44 cites·1 claims
- 0872US5364811AMethod of manufacturing a semiconductor memory device with multiple device forming regionsMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 15, 1994·26 cites·3 claims
- 0972US5229314AMethod of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulationMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 20, 1993·33 cites·2 claims
- 1070US7754541B2Display device and method of producing the sameMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Jul 13, 2010·5 cites·13 claims
- 1163US5888851AMethod of manufacturing a semiconductor device having a circuit portion and redundant circuit portion coupled through a meltable connectionMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Mar 30, 1999·27 cites·5 claims
- 1261US5801427ASemiconductor device having a polycide structureMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Sep 1, 1998·26 cites·7 claims
- 1360US7582900B2Array substrate for an image display deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Sep 1, 2009·1 cites·1 claims
- 1460US5240872AMethod of manufacturing semiconductor device having interconnection layer contacting source/drain regionsMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Aug 31, 1993·29 cites·4 claims
- 1560US5185284AMethod of making a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 9, 1993·20 cites·10 claims
- 1659US8435417B2Method of manufacturing semiconductor deviceNAKATA KAZUNARI·Filed 2010·Granted May 7, 2013·1 cites·5 claims
- 1759US5393688AMethod of manufacturing a stacked capacitor DRAMMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 28, 1995·16 cites·6 claims
- 1859US5309023AContact structure for interconnection in semiconductor devices and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted May 3, 1994·35 cites·23 claims
- 1956US10497850B2Thermoelectric converter and manufacturing method for manufacturing thermoelectric converterMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Dec 3, 2019·0 cites·12 claims
- 2055US9431479B2High breakdown voltage semiconductor device having a resurf layerHONDA SHIGETO·Filed 2010·Granted Aug 30, 2016·1 cites·10 claims
- 2154US5173752ASemiconductor device having interconnection layer contacting source/drain regionsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 22, 1992·22 cites·8 claims
- 2252US8450183B2Power semiconductor device and method of manufacturing the sameFUJII RYOICHI·Filed 2010·Granted May 28, 2013·1 cites·5 claims
- 2351US5614745AContact structure between two conductive layers in semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 25, 1997·19 cites·17 claims
- 2448US6033971ASemiconductor device having an element isolating oxide film and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 7, 2000·13 cites·9 claims
- 2547US5440165ASemiconductor device with means for suppressing electric fieldsMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 8, 1995·17 cites·7 claims
- 2645US10187009B2Method for diagnosing solar cell module, and diagnostic circuit and diagnostic system for solar cell moduleMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Jan 22, 2019·0 cites·10 claims
- 2744US5831323ASemiconductor device having an element isolating oxide film and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 3, 1998·11 cites·5 claims
- 2843US7397063B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Jul 8, 2008·1 cites·7 claims
- 2942US2008290892A1Evaluation device and evaluation method using evaluation deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Application pending·0 cites
- 3041US6040614ASemiconductor integrated circuit including a capacitor and a fuse elementMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 21, 2000·10 cites·5 claims
- 3141US2007272927A1Thin film transistor, method of manufacturing the thin film transistor, active matrix type display device, and method of manufacturing the active matrix type display deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Application pending·0 cites
- 3240US5089868ASemiconductor memory device with improved groove capacitorMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 18, 1992·8 cites·16 claims
- 3339US2006267115A1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2006·Application pending·0 cites
- 3437US5962907ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 5, 1999·4 cites·8 claims
- 3534US6259147B1Semiconductor device having a fuse layerMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jul 10, 2001·7 cites·6 claims
- 3634US5280444ADram comprising stacked-type capacitor having vertically protruding part and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 18, 1994·4 cites·12 claims
- 3732US5635413AMethod of manufacturing field effect transistorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jun 3, 1997·5 cites·4 claims
- 3832US5365474ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 15, 1994·3 cites·7 claims
- 3930US6162674AMethod of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 19, 2000·0 cites·5 claims
- 4030US5157469AField effect transistor having a multilayer interconnection layer therein with tapered sidewall insulatorsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 20, 1992·0 cites·15 claims
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