Inventor · disambiguated record
Hirohisa Kawasaki
Also filed as: KAWASAKI HIROHISA
11 granted patents·6 pending applications·146 citations·filing 2003–2014
89Inventor score
Top patents by PatentIndex Score
17 records- 0197US8362574B2Faceted EPI shape and half-wrap around silicide in S/D merged FinFETTOSHIBA KK·Filed 2010·Granted Jan 29, 2013·53 cites·18 claims
- 0292US8134209B2Semiconductor device and method for manufacturing the sameYAGISHITA ATSUSHI·Filed 2009·Granted Mar 13, 2012·26 cites·20 claims
- 0390US8116121B2Semiconductor device and manufacturing methods with using non-planar type of transistorsKAWASAKI HIROHISA·Filed 2009·Granted Feb 14, 2012·23 cites·9 claims
- 0488US8859389B2Methods of making fins and fin field effect transistors (FinFETs)KAWASAKI HIROHISA·Filed 2011·Granted Oct 14, 2014·20 cites·15 claims
- 0577US7687368B2Semiconductor device manufacturing methodTOSHIBA KK·Filed 2005·Granted Mar 30, 2010·8 cites·14 claims
- 0671US7164175B2Semiconductor device with silicon-film fins and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Jan 16, 2007·15 cites·11 claims
- 0755US8969846B2Variable resistance memoryTOSHIBA KK·Filed 2014·Granted Mar 3, 2015·0 cites·20 claims
- 0855US7816739B2Semiconductor device using SiGe for substrateTOSHIBA KK·Filed 2007·Granted Oct 19, 2010·1 cites·11 claims
- 0954US8809830B2Variable resistance memoryKAWASAKI HIROHISA·Filed 2012·Granted Aug 19, 2014·0 cites·17 claims
- 1048US7541245B2Semiconductor device with silicon-film fins and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Jun 2, 2009·0 cites·15 claims
- 1146US2009174036A1Plasma curing of patterning materials for aggressively scaled featuresIBM·Filed 2008·Application pending·0 cites
- 1243US2012108016A1Semiconductor device and manufacturing methods with using non-planar type of transistorsKAWASAKI HIROHISA·Filed 2012·Application pending·0 cites
- 1342US9281474B2Variable resistance memory and method of manufacturing the sameTOSHIBA KK·Filed 2013·Granted Mar 8, 2016·0 cites·10 claims
- 1439US2007170474A1Semiconductor device and method of fabricating the sameTOSHIBA KK·Filed 2007·Application pending·0 cites
- 1536US2011260282A1Semiconductor device and manufacturing methodsTOSHIBA AMERICA ELECTRONIC·Filed 2010·Application pending·0 cites
- 1634US2005133819A1Semiconductor device using strained silicon layer and method of manufacturing the sameFiled 2004·Application pending·0 cites
- 1732US2005082628A1Semiconductor device and method of manufacturing the sameFiled 2003·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →