Inventor · disambiguated record
Isao Kidoguchi
Also filed as: KIDOGUCHI ISAO
103 granted patents·15 pending applications·1,549 citations·filing 1988–2023
99Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD77PANASONIC CORP29NUVOTON TECHNOLOGY CORP JAPAN2YUSUKE MORI2HAYAKAWA KOICHI1
Top patents by PatentIndex Score
118 records- 0196US6720586B1Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Apr 13, 2004·98 cites·4 claims
- 0294US7381268B2Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitrideMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jun 3, 2008·12 cites·38 claims
- 0394US5787104ASemiconductor light emitting element and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Jul 28, 1998·75 cites·7 claims
- 0493US7564884B1Ridge-stripe semiconductor laserPANASONIC CORP·Filed 2006·Granted Jul 21, 2009·21 cites·13 claims
- 0592US7435295B2Method for producing compound single crystal and production apparatus for use thereinMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 14, 2008·11 cites·32 claims
- 0692US6614059B1Semiconductor light-emitting device with quantum wellMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 2, 2003·91 cites·5 claims
- 0791US5751013ASemiconductor light-emitting device and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted May 12, 1998·72 cites·11 claims
- 0889US7754012B2Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitridePANASONIC CORP·Filed 2008·Granted Jul 13, 2010·6 cites·27 claims
- 0988US6861672B2Semiconductor light emitting element and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 1, 2005·18 cites·18 claims
- 1085US7846820B2Nitride semiconductor device and process for producing the samePANASONIC CORP·Filed 2005·Granted Dec 7, 2010·10 cites·13 claims
- 1185US6266354B1Semiconductor laser device with ridge structureMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jul 24, 2001·27 cites·6 claims
- 1284US7368766B2Semiconductor light emitting element and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 6, 2008·12 cites·10 claims
- 1384US6798811B1Semiconductor laser device, method for fabricating the same, and optical disk apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 28, 2004·18 cites·19 claims
- 1484US5523256AMethod for producing a semiconductor laserMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1994·Granted Jun 4, 1996·41 cites·13 claims
- 1583US6030849AMethods of manufacturing semiconductor, semiconductor device and semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Feb 29, 2000·66 cites·23 claims
- 1682US7338827B2Nitride semiconductor laser and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Mar 4, 2008·16 cites·5 claims
- 1782US7221037B2Method of manufacturing group III nitride substrate and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 22, 2007·15 cites·7 claims
- 1881US6911351B2Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 28, 2005·22 cites·87 claims
- 1981US6326638B1Semiconductor light emitting element and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Dec 4, 2001·32 cites·4 claims
- 2081US6081541ASemiconductor laser device and optical disk apparatus using the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Jun 27, 2000·27 cites·6 claims
- 2180US8981340B2Nitride semiconductor device and production method thereofPANASONIC CORP·Filed 2013·Granted Mar 17, 2015·2 cites·8 claims
- 2280US7288152B2Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the sameYUSUKE MORI·Filed 2004·Granted Oct 30, 2007·31 cites·28 claims
- 2379US7542500B2Semiconductor laser devicePANASONIC CORP·Filed 2007·Granted Jun 2, 2009·6 cites·14 claims
- 2479US5923690ASemiconductor laser deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 13, 1999·50 cites·23 claims
- 2578US7704860B2Nitride-based semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2005·Granted Apr 27, 2010·6 cites·9 claims
- 2677US7176115B2Method of manufacturing Group III nitride substrate and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Feb 13, 2007·19 cites·58 claims
- 2777US6867112B1Method of fabricating nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Mar 15, 2005·17 cites·3 claims
- 2877US6195374B1Semiconductor laser and optical disk device using the laserMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Feb 27, 2001·9 cites·6 claims
- 2977US6072817ASemiconductor laser device and optical disk apparatus using the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Jun 6, 2000·22 cites·13 claims
- 3076US7839911B2Semiconductor laser devicePANASONIC CORP·Filed 2007·Granted Nov 23, 2010·5 cites·2 claims
- 3176US7613220B2Two-wavelength semiconductor laser device and method for fabricating the samePANASONIC CORP·Filed 2007·Granted Nov 3, 2009·5 cites·2 claims
- 3276US6165812AGallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Dec 26, 2000·70 cites·25 claims
- 3375US7474682B2Semiconductor laser device and laser projectorPANASONIC CORP·Filed 2004·Granted Jan 6, 2009·12 cites·31 claims
- 3473US7653104B2Semiconductor laser devicePANASONIC CORP·Filed 2008·Granted Jan 26, 2010·4 cites·21 claims
- 3573US6118800ASemiconductor laser and cleaving methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Sep 12, 2000·35 cites·25 claims
- 3672US12119618B2Nitride-based semiconductor light-emitting element and manufacturing method thereof, and manufacturing method of nitride-based semiconductor crystalNUVOTON TECHNOLOGY CORP JAPAN·Filed 2023·Granted Oct 15, 2024·0 cites·22 claims
- 3772US7433380B2Semiconductor laser device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Oct 7, 2008·4 cites·11 claims
- 3872US7227172B2Group-III-element nitride crystal semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jun 5, 2007·14 cites·20 claims
- 3972US6611005B2Method for producing semiconductor and semiconductor laser deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 26, 2003·17 cites·2 claims
- 4072US6133058AFabrication of semiconductor light-emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Oct 17, 2000·27 cites·3 claims
- 4171US6562129B2Formation method for semiconductor layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted May 13, 2003·11 cites·6 claims
- 4271US6444485B1Semiconductor laser and optical disk device using the laserMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 3, 2002·6 cites·5 claims
- 4371US5383214ASemiconductor laser and a method for producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Jan 17, 1995·26 cites·13 claims
- 4471US4866007AMethod for preparing single-crystal ZnSeSUMITOMO ELECTRIC INDUSTRIES·Filed 1988·Granted Sep 12, 1989·21 cites·26 claims
- 4570US7426227B2Semiconductor laser device, optical disk apparatus and optical integrated unitMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Sep 16, 2008·3 cites·4 claims
- 4670US5895225ASemiconductor light-emitting device and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Apr 20, 1999·25 cites·6 claims
- 4769US6667185B2Method of fabricating nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 23, 2003·10 cites·7 claims
- 4869US6136626ASemiconductor light-emitting device and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Oct 24, 2000·34 cites·8 claims
- 4969US5144633ASemiconductor laser and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1991·Granted Sep 1, 1992·25 cites·24 claims
- 5068US7301979B2Semiconductor laserMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Nov 27, 2007·8 cites·7 claims
Showing the top 50 of 118 patent records by PatentIndex Score.
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