Inventor · disambiguated record
Hisashi Nakayama
Also filed as: NAKAYAMA HISASHI
10 granted patents·27 citations·filing 2000–2008
85Inventor score
Top patents by PatentIndex Score
10 records- 0172US7433380B2Semiconductor laser device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Oct 7, 2008·4 cites·11 claims
- 0267US7834366B2Semiconductor device having a group III nitride semiconductor layerPANASONIC CORP·Filed 2006·Granted Nov 16, 2010·2 cites·3 claims
- 0363US7091524B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 15, 2006·7 cites·8 claims
- 0462US7713812B2Method for manufacturing semiconductor thin filmPANASONIC CORP·Filed 2006·Granted May 11, 2010·2 cites·13 claims
- 0557US7693202B2Semiconductor laser device and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Apr 6, 2010·1 cites·10 claims
- 0657US7008839B2Method for manufacturing semiconductor thin filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 7, 2006·7 cites·17 claims
- 0752US7704759B2Semiconductor laser device and method for fabricating the samePANASONIC CORP·Filed 2008·Granted Apr 27, 2010·0 cites·2 claims
- 0849US6636541B1Semiconductor laser deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Oct 21, 2003·2 cites·33 claims
- 0948US7795630B2Semiconductor device with oxidized regions and method for fabricating the samePANASONIC CORP·Filed 2004·Granted Sep 14, 2010·2 cites·5 claims
- 1045US7711023B2Semiconductor laser device and fabrication method thereforPANASONIC CORP·Filed 2007·Granted May 4, 2010·0 cites·1 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →