Inventor · disambiguated record
Gunther Schindler
Also filed as: SCHINDLER GUENTHER · SCHINDLER GUNTHER
34 granted patents·4 pending applications·477 citations·filing 1997–2005
97Inventor score
Files withINFINEON TECHNOLOGIES AG25SIEMENS AG3SYMETRIX CORP3INFINCON TECHNOLOGIES AG1LOGITEX REINSTMEDIENTECHNIK GM1
Top patents by PatentIndex Score
38 records- 0187US6043529ASemiconductor configuration with a protected barrier for a stacked cellSIEMENS AG·Filed 1999·Granted Mar 28, 2000·72 cites·7 claims
- 0283US7262984B2Method and apparatus for storing and reading information in a ferroelectric materialSCHINDLER GUENTHER·Filed 2005·Granted Aug 28, 2007·14 cites·21 claims
- 0381US6438019B2Ferroelectric random access memory (FeRAM) having storage capacitors with different coercive voltagesINFINEON TECHNOLOGIES AG·Filed 2001·Granted Aug 20, 2002·29 cites·12 claims
- 0478US6171934B1Recovery of electronic properties in process-damaged ferroelectrics by voltage-cyclingSYMETRIX CORP·Filed 1998·Granted Jan 9, 2001·39 cites·15 claims
- 0578US5962069AProcess for fabricating layered superlattice materials and AB03 type metal oxides without exposure to oxygen at high temperaturesSYMETRIX CORP·Filed 1997·Granted Oct 5, 1999·52 cites·26 claims
- 0677US7422940B2Layer arrangementINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 9, 2008·8 cites·9 claims
- 0776US6586348B2Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallizeINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 1, 2003·18 cites·3 claims
- 0875US7033926B2Strip conductor arrangement and method for producing a strip conductor arrangementINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 25, 2006·24 cites·27 claims
- 0973US6322849B2Recovery of electronic properties in hydrogen-damaged ferroelectrics by low-temperature annealing in an inert gasSYMETRIX CORP·Filed 1998·Granted Nov 27, 2001·33 cites·7 claims
- 1070US6503792B2Method for fabricating a patterned metal-oxide-containing layerINFINCON TECHNOLOGIES AG·Filed 2000·Granted Jan 7, 2003·17 cites·14 claims
- 1170US6500677B2Method for fabricating a ferroelectric memory configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 31, 2002·13 cites·20 claims
- 1269US6559003B2Method of producing a ferroelectric semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 6, 2003·16 cites·20 claims
- 1368US7211909B2Monolithic integrated circuit arrangementINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 1, 2007·13 cites·21 claims
- 1463US6649424B2Method for fabricating an integrated semiconductor circuit having a strongly polarizable dielectric or ferroelectricINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 18, 2003·10 cites·17 claims
- 1558US6649468B2Method for fabricating a microelectronic componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 18, 2003·8 cites·12 claims
- 1657US6323513B1Semiconductor component having at least one capacitor and methods for fabricating itINFINEON TECHNOLOGIES AG·Filed 1999·Granted Nov 27, 2001·18 cites·15 claims
- 1755US6730562B2Method of patterning ferroelectric layersINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 4, 2004·4 cites·36 claims
- 1851US6051485AMethod of producing a platinum-metal pattern or structure by a lift-off processSIEMENS AG·Filed 1998·Granted Apr 18, 2000·13 cites·12 claims
- 1949US6197633B1Method for the production of an integrated semiconductor memory configurationINFINEON TECHNOLOGIES AG·Filed 1999·Granted Mar 6, 2001·10 cites·3 claims
- 2048US6495415B2Method for fabricating a patterned layerINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 17, 2002·3 cites·25 claims
- 2146US6852240B2Method of manufacturing a ferroelectric capacitor configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 8, 2005·3 cites·3 claims
- 2246US6515891B2Random access memory with hidden bitsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 4, 2003·5 cites·10 claims
- 2346US6136659AProduction process for a capacitor electrode formed of a platinum metalINFINEON TECHNOLOGIES AG·Filed 1998·Granted Oct 24, 2000·12 cites·17 claims
- 2445US7276300B2Microelectronic structure having a hydrogen barrier layerINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 2, 2007·2 cites·8 claims
- 2544US6627496B1Process for producing structured layers, process for producing components of an integrated circuit, and process for producing a memory configurationINFINEON TECHNOLOGIES AG·Filed 1999·Granted Sep 30, 2003·11 cites·27 claims
- 2641US6168988B1Method for producing barrier-free semiconductor memory configurationsINFINEON TECHNOLOGIES AG·Filed 1999·Granted Jan 2, 2001·7 cites·11 claims
- 2740US6656787B2Method for fabricating non-volatile memoriesINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 2, 2003·0 cites·1 claims
- 2838US6316802B1Easy to manufacture integrated semiconductor memory configuration with platinum electrodesINFINEON TECHNOLOGIES AG·Filed 1999·Granted Nov 13, 2001·5 cites·9 claims
- 2937US6627934B1Integrated semiconductor memory configuration with a buried plate electrode and method for its fabricationINFINEON TECHNOLOGIES AG·Filed 1999·Granted Sep 30, 2003·4 cites·7 claims
- 3037US6537900B2Method for patterning a metal or metal silicide layer and a capacitor structure fabricated by the methodINFINEON TECHNOLOGIES AG·Filed 2001·Granted Mar 25, 2003·0 cites·17 claims
- 3137US6346424B1Process for producing high-epsilon dielectric layer or ferroelectric layerINFINEON TECHNOLOGIES AG·Filed 1999·Granted Feb 12, 2002·6 cites·11 claims
- 3237US6097050AMemory configuration with self-aligning non-integrated capacitor configurationSIEMENS AG·Filed 1999·Granted Aug 1, 2000·6 cites·24 claims
- 3337US2002090450A1Method for fabricating a precious-metal electrodeFiled 2001·Application pending·0 cites
- 3436US2001018132A1Method for producing very thin ferroelectric layersFiled 2001·Application pending·0 cites
- 3535US6681148B2Monitoring system for a conveying device for flat articles, especially wafersLOGITEX REINSTMEDIENTECHNIK GM·Filed 2000·Granted Jan 20, 2004·2 cites·9 claims
- 3634US6825116B2Method for removing structuresINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 30, 2004·0 cites·10 claims
- 3734US2002016012A1Precise local creation of openings in a layerFiled 2001·Application pending·0 cites
- 3831US2001018237A1Method for fabricating a nonvolatile dram memory cellFiled 2001·Application pending·0 cites
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