Inventor · disambiguated record
Wen-Li Chiu
Also filed as: CHIU WEN-LI
4 granted patents·9 pending applications·8 citations·filing 2016–2024
61Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD13
Top patents by PatentIndex Score
13 records- 0189US10128156B1FinFET device with reduced parasitic capacitance and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 13, 2018·8 cites·20 claims
- 0258US2025331285A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0356US2025393276A1Semiconductor device with isolation structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0456US2025324629A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0556US2025324668A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0655US2025062158A1Semiconductor device structure with gate spacer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0754US2025159967A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0852US2023411492A1Structure and formation method of semiconductor device with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 0951US2024147685A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1050US2024113188A1Integrated circuit structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1147US11101385B2Fin field effect transistor (FinFET) device structure with air gap and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 24, 2021·0 cites·20 claims
- 1247US11049775B2Semiconductor device having FinFET with work function layers and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 29, 2021·0 cites·20 claims
- 1345US10529861B2FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 7, 2020·0 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →