Inventor

ABROKWAH JONATHAN K

US39 patents

⚠️ This page may combine multiple inventors who share the name “ABROKWAH JONATHAN K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ABROKWAH JONATHAN K

MOTOROLA INC

Alkaline-earth metal silicides on silicon

Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making

Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts

Complementary heterojunction field effect transistor with an anisotype N+ ga-channel devices

Method of forming a silicon nitride layer

Method of preparing crystalline alkaline earth metal oxides on a Si substrate

HIGFET and method

Method of forming a Ga2 O3 dielectric layer

Heterojunction method and structure

Method of manufacturing a semiconductor component and semiconductor component thereof

Thermal processing of oxide-compound semiconductor structures

Logic circuit using vertically stacked heterojunction field effect transistors

Method of passivating the surface of a Si substrate

III-V epitaxial wafer production

Method of fabricating submicron FETs with low temperature group III-V material

N-type HIGFET and method

Passivation of oxide-compound semiconductor interfaces

Refractory gate heterostructure field effect transistor

Method of manufacturing a semiconductor component having a capacitor

Self-doped high performance complementary heterojunction field effect transistor

Fabrication method for a gate quality oxide-compound semiconductor structure

Semiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF)

Selective processing using a hydrocarbon and hydrogen

N-type higfet and method

Method of manufacture of multilayer dielectric on a III-V substrate

Insulator-compound semiconductor interface structure

FREESCALE SEMICONDUCTOR INC

Radio frequency circuit with integrated on-chip radio frequency signal coupler

Balun transformer with improved harmonic suppression

Balun signal transformer and method of forming

Chemistry for etching quaternary interface layers on InGaAsP mostly formed between GaAs and InxGa(1-x)P layers

III-V MOSFET fabrication and device

Integrated passive device with a high resistivity substrate and method for forming the same

Method of manufacturing a semiconductor component and semiconductor component thereof

HONEYWELL INC

High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor

Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates

Control of Si doping in GaAs, (Al,Ga)As and other compound semiconductors during MBE growth

ABROKWAH JONATHAN K

Insulated gate field effect transistors

Method for forming an insulated gate field effect device

(unassigned)

Method of making ohmic contacts to a complementary III-V semiconductor device