Inventor · disambiguated record
Leopoldo D. Yau
Also filed as: YAU LEOPOLDO D · YAU LEOPOLDO DY
26 granted patents·2,809 citations·filing 1975–1998
98Inventor score
Top patents by PatentIndex Score
26 records- 0198US4837185APulsed dual radio frequency CVD processINTEL CORP·Filed 1988·Granted Jun 6, 1989·596 cites·16 claims
- 0297US6165826ATransistor with low resistance tip and method of fabrication in a CMOS processINTEL CORP·Filed 1995·Granted Dec 26, 2000·301 cites·52 claims
- 0396US5783478AMethod of frabricating a MOS transistor having a composite gate electrodeINTEL CORP·Filed 1996·Granted Jul 21, 1998·157 cites·10 claims
- 0496US5625217AMOS transistor having a composite gate electrode and method of fabricationINTEL CORP·Filed 1995·Granted Apr 29, 1997·162 cites·4 claims
- 0595US5710450ATransistor with ultra shallow tip and method of fabricationINTEL CORP·Filed 1994·Granted Jan 20, 1998·199 cites·30 claims
- 0695US5554064AOrbital motion chemical-mechanical polishing apparatus and method of fabricationINTEL CORP·Filed 1993·Granted Sep 10, 1996·149 cites·46 claims
- 0795US5104819AFabrication of interpoly dielctric for EPROM-related technologiesINTEL CORP·Filed 1989·Granted Apr 14, 1992·173 cites·19 claims
- 0894US6326664B1Transistor with ultra shallow tip and method of fabricationINTEL CORP·Filed 1997·Granted Dec 4, 2001·128 cites·33 claims
- 0994US5611943AMethod and apparatus for conditioning of chemical-mechanical polishing padsINTEL CORP·Filed 1995·Granted Mar 18, 1997·120 cites·31 claims
- 1094US5595526AMethod and apparatus for endpoint detection in a chemical/mechanical process for polishing a substrateINTEL CORP·Filed 1994·Granted Jan 21, 1997·91 cites·14 claims
- 1194US5434093AInverted spacer transistorINTEL CORP·Filed 1994·Granted Jul 18, 1995·166 cites·25 claims
- 1294US3997367AMethod for making transistorsBELL TELEPHONE LABOR INC·Filed 1975·Granted Dec 14, 1976·82 cites·12 claims
- 1385US4587138AMOS rear end processingINTEL CORP·Filed 1984·Granted May 6, 1986·75 cites·7 claims
- 1483US4755480AMethod of making a silicon nitride resistor using plasma enhanced chemical vapor depositionINTEL CORP·Filed 1986·Granted Jul 5, 1988·46 cites·3 claims
- 1582US5863832ACapping layer in interconnect system and method for bonding the capping layer onto the interconnect systemINTEL CORP·Filed 1996·Granted Jan 26, 1999·70 cites·12 claims
- 1680US4690728APattern delineation of vertical load resistorINTEL CORP·Filed 1986·Granted Sep 1, 1987·53 cites·30 claims
- 1778US5244843AProcess for forming a thin oxide layerINTEL CORP·Filed 1991·Granted Sep 14, 1993·57 cites·27 claims
- 1875US4786612APlasma enhanced chemical vapor deposited vertical silicon nitride resistorINTEL CORP·Filed 1987·Granted Nov 22, 1988·31 cites·11 claims
- 1969US5488003AMethod of making emitter trench BiCMOS using integrated dual layer emitter maskINTEL CORP·Filed 1993·Granted Jan 30, 1996·26 cites·15 claims
- 2069US4136434AFabrication of small contact openings in large-scale-integrated devicesBELL TELEPHONE LABOR INC·Filed 1977·Granted Jan 30, 1979·28 cites·2 claims
- 2164US4620986AMOS rear end processingINTEL CORP·Filed 1985·Granted Nov 4, 1986·33 cites·9 claims
- 2258US6139404AApparatus and a method for conditioning a semiconductor wafer polishing padINTEL CORP·Filed 1998·Granted Oct 31, 2000·19 cites·37 claims
- 2357US6095904AOrbital motion chemical-mechanical polishing method and apparatusINTEL CORP·Filed 1996·Granted Aug 1, 2000·17 cites·8 claims
- 2452US4917044AElectrical contact apparatus for use with plasma or glow discharge reaction chamberINTEL CORP·Filed 1989·Granted Apr 17, 1990·18 cites·1 claims
- 2541USRE38674EProcess for forming a thin oxide layerINTEL CORP·Filed 1995·Granted Dec 21, 2004·8 cites·54 claims
- 2636US5856697AIntegrated dual layer emitter mask and emitter trench for BiCMOS processesINTEL CORP·Filed 1997·Granted Jan 5, 1999·4 cites·19 claims
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