Inventor · disambiguated record
Shizuo Sawada
Also filed as: SAWADA SHIZUO
32 granted patents·1,047 citations·filing 1981–2006
98Inventor score
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32 records- 0195US6252281B1Semiconductor device having an SOI substrateTOSHIBA KK·Filed 1996·Granted Jun 26, 2001·195 cites·42 claims
- 0293US5410169ADynamic random access memory having bit lines buried in semiconductor substrateTOSHIBA KK·Filed 1993·Granted Apr 25, 1995·95 cites·15 claims
- 0387US4951175ASemiconductor memory device with stacked capacitor structure and the manufacturing method thereofTOSHIBA KK·Filed 1989·Granted Aug 21, 1990·56 cites·26 claims
- 0486US5142639ASemiconductor memory device having a stacked capacitor cell structureTOSHIBA KK·Filed 1991·Granted Aug 25, 1992·77 cites·17 claims
- 0585US5276343ASemiconductor memory device having a bit line constituted by a semiconductor layerTOSHIBA KK·Filed 1992·Granted Jan 4, 1994·55 cites·6 claims
- 0682US7187027B2Stacked capacitor-type semiconductor storage device and manufacturing method thereofTOSHIBA KK·Filed 2006·Granted Mar 6, 2007·7 cites·7 claims
- 0782US5004704AMethod for manufacturing a semiconductor device having a phospho silicate glass layer as an interlayer insulating layerTOSHIBA KK·Filed 1989·Granted Apr 2, 1991·46 cites·12 claims
- 0875US5079613ASemiconductor device having different impurity concentration wellsTOSHIBA KK·Filed 1990·Granted Jan 7, 1992·37 cites·35 claims
- 0973US5302844ASemiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 1993·Granted Apr 12, 1994·33 cites·22 claims
- 1073US5210437AMOS device having a well layer for controlling threshold voltageTOSHIBA KK·Filed 1992·Granted May 11, 1993·64 cites·15 claims
- 1172US5356830ASemiconductor device and its manufacturing methodTOBSHIBA KK·Filed 1990·Granted Oct 18, 1994·54 cites·14 claims
- 1269US5726475ASemiconductor device having different impurity concentration wellsTOSHIBA KK·Filed 1994·Granted Mar 10, 1998·29 cites·10 claims
- 1368US5194752ASemiconductor memory deviceTOSHIBA KK·Filed 1991·Granted Mar 16, 1993·25 cites·39 claims
- 1466US5041887ASemiconductor memory deviceTOSHIBA KK·Filed 1990·Granted Aug 20, 1991·27 cites·8 claims
- 1565US6551894B1Stacked capacitor-type semiconductor storage device and manufacturing method thereofTOSHIBA KK·Filed 2000·Granted Apr 22, 2003·8 cites·20 claims
- 1665US4433911AMethod of evaluating measure precision of patterns and photomask thereforTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Feb 28, 1984·17 cites·15 claims
- 1763US5374838ASemiconductor device having different impurity concentration wellsTOSHIBA KK·Filed 1992·Granted Dec 20, 1994·19 cites·4 claims
- 1863US4916521AContact portion of semiconductor integrated circuit deviceTOSHIBA KK·Filed 1988·Granted Apr 10, 1990·28 cites·19 claims
- 1961US4833647ASemiconductor memory device having high capacitance and improved radiation immunityTOSHIBA KK·Filed 1986·Granted May 23, 1989·18 cites·8 claims
- 2059US5260226ASemiconductor device having different impurity concentration wellsTOSHIBA KK·Filed 1992·Granted Nov 9, 1993·16 cites·5 claims
- 2159US5238860ASemiconductor device having different impurity concentration wellsTOSHIBA KK·Filed 1992·Granted Aug 24, 1993·19 cites·8 claims
- 2258US6130450AStacked capacitor-type semiconductor storage device and manufacturing method thereofTOSHIBA KK·Filed 1996·Granted Oct 10, 2000·15 cites·51 claims
- 2358US5144388ASemiconductor device having a plurality of fets formed in an element areaTOSHIBA KK·Filed 1991·Granted Sep 1, 1992·18 cites·46 claims
- 2456US7023044B2Stacked capacitor-type semiconductor storage device and manufacturing method thereofTOSHIBA KK·Filed 2004·Granted Apr 4, 2006·4 cites·13 claims
- 2555US5110766AMethod of manufacturing a semiconductor device including forming a flattening layer over hollows in a contact holeTOSHIBA KK·Filed 1990·Granted May 5, 1992·23 cites·1 claims
- 2649US5187566ASemiconductor memory and method of manufacturing the sameTOSHIBA KK·Filed 1991·Granted Feb 16, 1993·15 cites·4 claims
- 2746US5324975ASemiconductor memory deviceTOSHIBA KK·Filed 1993·Granted Jun 28, 1994·9 cites·6 claims
- 2845US4410375AMethod for fabricating a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Oct 18, 1983·12 cites·14 claims
- 2944US5302542AMethod of making a semiconductor memory deviceTOSHIBA KK·Filed 1993·Granted Apr 12, 1994·14 cites·3 claims
- 3042US6846733B2Stacked capacitor-type semiconductor storage device and manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Jan 25, 2005·0 cites·14 claims
- 3139US5032528AMethod of forming a contact hole in semiconductor integrated circuitTOSHIBA KK·Filed 1990·Granted Jul 16, 1991·10 cites·13 claims
- 3231US5111275AMulticell semiconductor memory deviceTOSHIBA KK·Filed 1988·Granted May 5, 1992·2 cites·14 claims
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