Inventor · disambiguated record
Dietrich Widmann
Also filed as: WIDMANN DIETRICH
28 granted patents·611 citations·filing 1974–2001
97Inventor score
Files withSIEMENS AG17INFINEON TECHNOLOGIES AG8INFINEON TECHNOLOGIES RICHMOND2INFINEON TECHNOLOGIES CORP1
Top patents by PatentIndex Score
28 records- 0194US6459123B1Double gated transistorINFINEON TECHNOLOGIES RICHMOND·Filed 1999·Granted Oct 1, 2002·116 cites·7 claims
- 0288US4356622AMethod of producing low-resistance diffused regions in IC MOS semiconductor circuits in silicon-gate technology metal silicide layer formationSIEMENS AG·Filed 1980·Granted Nov 2, 1982·72 cites·9 claims
- 0385US6262448B1Memory cell having trench capacitor and vertical, dual-gated transistorINFINEON TECHNOLOGIES CORP·Filed 1999·Granted Jul 17, 2001·54 cites·6 claims
- 0481US4291321AMIS-field effect transistor having a short channel length and method of making the sameSIEMENS AG·Filed 1979·Granted Sep 22, 1981·31 cites·16 claims
- 0579US4562640AMethod of manufacturing stable, low resistance contacts in integrated semiconductor circuitsSIEMENS AG·Filed 1984·Granted Jan 7, 1986·32 cites·9 claims
- 0679US4382826AMethod of making MIS-field effect transistor having a short channel lengthSIEMENS AG·Filed 1981·Granted May 10, 1983·41 cites·10 claims
- 0778US3953877ASemiconductors covered by a polymeric heat resistant relief structureSIEMENS AG·Filed 1974·Granted Apr 27, 1976·23 cites·7 claims
- 0875US6686098B2Lithography method and lithography maskINFINEON TECHNOLOGIES AG·Filed 2000·Granted Feb 3, 2004·19 cites·11 claims
- 0974US6319787B1Method for forming a high surface area trench capacitorSIEMENS AG·Filed 1998·Granted Nov 20, 2001·33 cites·3 claims
- 1070US6515319B2Field-effect-controlled transistor and method for fabricating the transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 4, 2003·17 cites·6 claims
- 1170US4047975AProcess for the production of a bipolar integrated circuitSIEMENS AG·Filed 1976·Granted Sep 13, 1977·25 cites·16 claims
- 1268US4211888AArrangement with several thermal elements in series connectionSIEMENS AG·Filed 1978·Granted Jul 8, 1980·16 cites·12 claims
- 1364US5869860AFerroelectric memory device and method for producing the deviceSIEMENS AG·Filed 1996·Granted Feb 9, 1999·16 cites·6 claims
- 1460US6232169B1Method for producing a capacitorINFINEON TECHNOLOGIES AG·Filed 1998·Granted May 15, 2001·13 cites·7 claims
- 1554US6503784B1Double gated transistorINFINEON TECHNOLOGIES RICHMOND·Filed 2000·Granted Jan 7, 2003·5 cites·14 claims
- 1654US6022786AMethod for manufacturing a capacitor for a semiconductor arrangementSIEMENS AG·Filed 1998·Granted Feb 8, 2000·15 cites·13 claims
- 1754US5989972ACapacitor in a semiconductor configuration and process for its productionSIEMENS AG·Filed 1996·Granted Nov 23, 1999·13 cites·21 claims
- 1853US4108717AProcess for the production of fine structures consisting of a vapor-deposited material on a baseSIEMENS AG·Filed 1975·Granted Aug 22, 1978·13 cites·4 claims
- 1951US4313256AMethod of producing integrated MOS circuits via silicon gate technologySIEMENS AG·Filed 1980·Granted Feb 2, 1982·15 cites·4 claims
- 2048US6468812B2Method for producing a semiconductor memory device with a multiplicity of memory cellsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 22, 2002·2 cites·4 claims
- 2147US6124156AProcess for manufacturing a CMOS circuit with all-around dielectrically insulated source-drain regionsINFINEON TECHNOLOGIES AG·Filed 1998·Granted Sep 26, 2000·11 cites·9 claims
- 2245US6404034B1CMOS circuit with all-around dielectrically insulated source-drain regionsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jun 11, 2002·1 cites·13 claims
- 2345US4352237AMethod for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodesSIEMENS AG·Filed 1980·Granted Oct 5, 1982·8 cites·1 claims
- 2438US6472767B1Static random access memory (SRAM)INFINEON TECHNOLOGIES AG·Filed 1999·Granted Oct 29, 2002·4 cites·15 claims
- 2538US4090068AProcess for the automatic adjustment of semiconductor wafersSIEMENS AG·Filed 1976·Granted May 16, 1978·7 cites·10 claims
- 2635US6635388B1Contact hole fabrication with the aid of mutually crossing sudden phase shift edges of a single phase shift maskINFINEON TECHNOLOGIES AG·Filed 1999·Granted Oct 21, 2003·4 cites·11 claims
- 2733US4268563ARadiation mask for producing structural configurations in photo-sensitive resists by X-ray exposureSIEMENS AG·Filed 1979·Granted May 19, 1981·3 cites·4 claims
- 2832US4351100AMethod for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodesSIEMENS AG·Filed 1980·Granted Sep 28, 1982·2 cites·1 claims
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