Inventor · disambiguated record
Robert Tsu
Also filed as: TSU ROBERT · TSU ROBERT Y · TSU ROBERT YUNG-HIS · TSU ROBERT YUNG-HSI
25 granted patents·1,231 citations·filing 1994–2012
97Inventor score
Top patents by PatentIndex Score
25 records- 0199US6294420B1Integrated circuit capacitorTEXAS INSTRUMENTS INC·Filed 1998·Granted Sep 25, 2001·381 cites·15 claims
- 0292US5731220AMethod of making barium strontium titanate (BST) thin film by erbium donor dopingTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 24, 1998·93 cites·15 claims
- 0391US8912769B2Current mode buck-boost converterLIN MING-WEI·Filed 2012·Granted Dec 16, 2014·28 cites·17 claims
- 0490US6096597AMethod for fabricating an integrated circuit structureTEXAS INSTRUMENTS INC·Filed 1998·Granted Aug 1, 2000·86 cites·13 claims
- 0588US6461955B1Yield improvement of dual damascene fabrication through oxide fillingTEXAS INSTRUMENTS INC·Filed 2000·Granted Oct 8, 2002·54 cites·17 claims
- 0687US6696337B2Method of manufacturing a semiconductor integrated circuit device having a memory cell array and a peripheral circuit regionHITACHI LTD·Filed 2002·Granted Feb 24, 2004·35 cites·13 claims
- 0787US5617290ABarium strontium titanate (BST) thin films using boronTEXAS INSTRUMENTS INC·Filed 1995·Granted Apr 1, 1997·61 cites·6 claims
- 0884US6693356B2Copper transition layer for improving copper interconnection reliabilityTEXAS INSTRUMENTS INC·Filed 2002·Granted Feb 17, 2004·32 cites·11 claims
- 0983US6207561B1Selective oxidation methods for metal oxide deposition on metals in capacitor fabricationTEXAS INSTRUMENTS INC·Filed 1999·Granted Mar 27, 2001·62 cites·18 claims
- 1082US6528888B2Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 2001·Granted Mar 4, 2003·27 cites·2 claims
- 1182US6168985B1Semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacity and method of manufacturing sameHITACHI LTD·Filed 1999·Granted Jan 2, 2001·46 cites·12 claims
- 1282US5635741ABarium strontium titanate (BST) thin films by erbium donor dopingTEXAS INSTRUMENTS INC·Filed 1994·Granted Jun 3, 1997·44 cites·4 claims
- 1380US6653676B2Integrated circuit capacitorTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 25, 2003·24 cites·5 claims
- 1479US5573979ASloped storage node for a 3-D dram cell structureTEXAS INSTRUMENTS INC·Filed 1995·Granted Nov 12, 1996·56 cites·19 claims
- 1578US6951812B2Copper transition layer for improving copper interconnection reliabilityTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 4, 2005·22 cites·4 claims
- 1675US5972769ASelf-aligned multiple crown storage capacitor and method of formationTEXAS INSTR INCOPORATED·Filed 1997·Granted Oct 26, 1999·32 cites·10 claims
- 1775US5453908ABarium strontium titanate (BST) thin films by holmium donor dopingTEXAS INSTRUMENTS INC·Filed 1994·Granted Sep 26, 1995·36 cites·15 claims
- 1872US6037207AMethod of manufacturing semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacityHITACHI LTD·Filed 1997·Granted Mar 14, 2000·30 cites·17 claims
- 1969US7402514B2Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layerTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 22, 2008·17 cites·14 claims
- 2062US5432128AReliability enhancement of aluminum interconnects by reacting aluminum leads with a strengthening gasTEXAS INSTRUMENTS INC·Filed 1994·Granted Jul 11, 1995·30 cites·14 claims
- 2152US6417045B1Method of manufacturing a semiconductor integrated circuit device including a DRAM having reduced parasitic bit line capacityHITACHI LTD·Filed 2000·Granted Jul 9, 2002·3 cites·6 claims
- 2252US5609927AProcessing methods for high-dielectric-constant materialsTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 11, 1997·17 cites·3 claims
- 2347US6331325B1Barium strontium titanate (BST) thin films using boronTEXAS INSTRUMENTS INC·Filed 1994·Granted Dec 18, 2001·9 cites·10 claims
- 2437US6194292B1Method of fabricating in-situ doped rough polycrystalline silicon using a single wafer reactorTEXAS INSTRUMENTS INC·Filed 1999·Granted Feb 27, 2001·5 cites·4 claims
- 2531US6060354AIn-situ doped rough polysilicon storage cell structure formed using gas phase nucleationTEXAS INSTRUMENTS INC·Filed 1997·Granted May 9, 2000·1 cites·7 claims
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