Inventor · disambiguated record
Soon-Oh Park
Also filed as: PARK SOON · PARK SOON-O · PARK SOON-OH
28 granted patents·6 pending applications·198 citations·filing 1996–2022
96Inventor score
Top patents by PatentIndex Score
34 records- 0197US9780144B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 3, 2017·16 cites·13 claims
- 0295US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0390US11770938B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 26, 2023·1 cites·22 claims
- 0490US9343672B2Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devicesPARK CHAN-JIN·Filed 2012·Granted May 17, 2016·10 cites·31 claims
- 0589US11227991B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 18, 2022·2 cites·20 claims
- 0687US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 0785US10026890B2Magnetoresistive random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 17, 2018·6 cites·22 claims
- 0885US8865558B2Method of forming a phase change material layer pattern and method of manufacturing a phase change memory devicePARK JEONG-HEE·Filed 2012·Granted Oct 21, 2014·6 cites·22 claims
- 0984US10403681B2Memory device including a variable resistance material layerSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 3, 2019·6 cites·20 claims
- 1082US10374008B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 6, 2019·2 cites·18 claims
- 1181US8299450B2Non-volatile memory device including phase-change materialAHN DONG-HO·Filed 2010·Granted Oct 30, 2012·8 cites·16 claims
- 1279US7563639B2Phase-changeable memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 21, 2009·10 cites·19 claims
- 1378US10957740B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 23, 2021·1 cites·20 claims
- 1478US10224371B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 5, 2019·2 cites·17 claims
- 1577US6686620B2FRAM and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 3, 2004·23 cites·11 claims
- 1675US10468594B2Variable resistance memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 5, 2019·2 cites·20 claims
- 1775US10388867B2Variable resistance memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 20, 2019·2 cites·16 claims
- 1874US8187918B2Methods of forming multi-level cell of semiconductor memoryOH GYU-HWAN·Filed 2009·Granted May 29, 2012·5 cites·11 claims
- 1973US11587977B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 21, 2023·0 cites·19 claims
- 2071US5774327AHigh dielectric capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jun 30, 1998·27 cites·6 claims
- 2161US8320170B2Multi-bit phase change memory devicesHWANG YOUNG-NAM·Filed 2010·Granted Nov 27, 2012·3 cites·16 claims
- 2261US8222625B2Non-volatile memory device including phase-change materialAHN DONG-HO·Filed 2010·Granted Jul 17, 2012·1 cites·4 claims
- 2356US11037988B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 15, 2021·0 cites·7 claims
- 2456US10546894B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 28, 2020·0 cites·18 claims
- 2553US6025223AMethods of forming high dielectric capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Feb 15, 2000·12 cites·25 claims
- 2652US8133758B2Method of fabricating phase-change memory device having TiC layerOH GYU-HWAN·Filed 2009·Granted Mar 13, 2012·0 cites·12 claims
- 2750US8718308B2Reproducing apparatus and method for automatically converting output mode based on movements of casingPARK SOON·Filed 2007·Granted May 6, 2014·2 cites·28 claims
- 2848US10249816B2Magnetoresistive random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 2, 2019·0 cites·8 claims
- 2948US2017271581A1Semiconductor memory devicesSEONG DONG-JUN·Filed 2017·Application pending·0 cites
- 3045US2019013357A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 3143US2006016396A1Apparatus for depositing a thin film on a substrateKUH BONG-JIN·Filed 2005·Application pending·0 cites
- 3242US2011284815A1Phase-change memory devices having stress relief buffersKIM IK-SOO·Filed 2011·Application pending·0 cites
- 3338US2020409344A1Method and apparatus for resource planning in a factory based on a simulation, and computer readable recording mediumVMS SOLUTIONS CO LTD·Filed 2020·Application pending·0 cites
- 3434US2013171743A1Magnetic device and method of manufacturing the sameLEE JANG-EUN·Filed 2012·Application pending·0 cites
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