Inventor · disambiguated record
Maria Santina Marangon
Also filed as: MARANGON MARIA S · MARANGON MARIA SANTINA
11 granted patents·5 pending applications·148 citations·filing 1993–2017
91Inventor score
Files withST MICROELECTRONICS SRL5SGS THOMSON MICROELECTRONICS4MICRON TECHNOLOGY INC3KIM YUDONG2OVONYX INC2
Top patents by PatentIndex Score
16 records- 0192US8513576B2Dual resistance heater for phase change devices and manufacturing method thereofKIM YUDONG·Filed 2010·Granted Aug 20, 2013·13 cites·17 claims
- 0290US8952299B2Dual resistance heater for phase change devices and manufacturing method thereofMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 10, 2015·5 cites·22 claims
- 0389US7880123B2Dual resistance heater for phase change devices and manufacturing method thereofKIM YUDONG·Filed 2005·Granted Feb 1, 2011·14 cites·8 claims
- 0482US6465950B1Method of fabricating flat fed screens, and flat screen obtained therebySGS THOMSON MICROELECTRONICS·Filed 2000·Granted Oct 15, 2002·15 cites·19 claims
- 0579US5407861AMetallization over tungsten plugsSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Apr 18, 1995·51 cites·47 claims
- 0671US6946673B2Integrated resistor, phase-change memory element including this resistor, and process for the fabrication thereofOVONYX INC·Filed 2003·Granted Sep 20, 2005·17 cites·20 claims
- 0768US7606056B2Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufacturedST MICROELECTRONICS SRL·Filed 2005·Granted Oct 20, 2009·6 cites·28 claims
- 0861US10522757B2Dual resistive-material regions for phase change memory devicesMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 31, 2019·0 cites·12 claims
- 0954US10522756B2Dual resistance heater for phase change memory devicesMICRON TECHNOLOGY INC·Filed 2015·Granted Dec 31, 2019·0 cites·8 claims
- 1052US6036566AMethod of fabricating flat FED screensSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Mar 14, 2000·8 cites·33 claims
- 1152US5786272AMetallization over tungsten plugsSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jul 28, 1998·19 cites·51 claims
- 1246US2006249369A1Process for physical vapor deposition of a chalcogenide material layer and chamber for physical vapor deposition of a chalcogenide material layer of a phase change memory deviceST MICROELECTRONICS SRL·Filed 2006·Application pending·0 cites
- 1344US2008217776A1Process for manufacturing integrated circuits formed on a semiconductor substrate and comprising tungsten layersST MICROELECTRONICS SRL·Filed 2008·Application pending·0 cites
- 1444US2008057682A1Manufacturing method of an integrated circuit formed on a semiconductor substrateST MICROELECTRONICS SRL·Filed 2007·Application pending·0 cites
- 1537US2006180850A1Process for manufacturing a memory with local electrical contact between the source line and the wellST MICROELECTRONICS SRL·Filed 2006·Application pending·0 cites
- 1636US2005269667A1Process for manufacturing integrated resistor and phase-change memory element including this resistorOVONYX INC·Filed 2005·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →