Inventor · disambiguated record
Tung-Sheng Hsiao
Also filed as: HSIAO TUNG-SHENG
6 granted patents·20 citations·filing 2012–2021
78Inventor score
Top patents by PatentIndex Score
6 records- 0194US10566519B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·8 cites·20 claims
- 0289US11751485B2Flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
- 0385US8951864B2Split-gate device and method of fabricating the sameWANG YU-HSIUNG·Filed 2012·Granted Feb 10, 2015·11 cites·20 claims
- 0476US11844286B2Flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 0572US11201281B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 14, 2021·0 cites·20 claims
- 0664US10763426B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
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