Inventor · disambiguated record
Yasunori Tokuda
Also filed as: TOKUDA YASUNORI
21 granted patents·4 pending applications·407 citations·filing 1986–2011
96Inventor score
Top patents by PatentIndex Score
25 records- 0194US6566734B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 20, 2003·102 cites·7 claims
- 0288US8035130B2Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity regionMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Oct 11, 2011·16 cites·9 claims
- 0387US4817110ASemiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Mar 28, 1989·41 cites·113 claims
- 0481US6617654B2Semiconductor device with sidewall spacers and elevated source/drain regionMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 9, 2003·28 cites·7 claims
- 0579US6518635B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 11, 2003·22 cites·18 claims
- 0673US6635938B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 21, 2003·19 cites·22 claims
- 0773US6228728B1Method of fabricating semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 8, 2001·35 cites·20 claims
- 0872US4843032AProcess for producing a DFB laser with a diffraction grating superlatticeMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jun 27, 1989·25 cites·9 claims
- 0966US5144397ALight responsive semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Sep 1, 1992·32 cites·2 claims
- 1063US4788689AComposite resonator-type semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Nov 29, 1988·15 cites·16 claims
- 1163US4786951ASemiconductor optical element and a process for producing the sameMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Nov 22, 1988·17 cites·15 claims
- 1262US7939943B2Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layerMITSUBISHI ELECTRIC CORP·Filed 2008·Granted May 10, 2011·1 cites·6 claims
- 1361US6624034B2Method of making field effect transistor in which the increase of parasitic capacitance is restrained by scale reductionMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Sep 23, 2003·8 cites·13 claims
- 1458US5306925ANonlinear optical element and method of using the sameMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 26, 1994·20 cites·8 claims
- 1553US7795738B2Nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Sep 14, 2010·0 cites·16 claims
- 1646US2009160054A1Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 1745US7678597B2Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contactMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Mar 16, 2010·0 cites·7 claims
- 1844US6232192B1Method of manufacturing semiconductor device having sidewall portions removedMITUBISHI DENKI KABUSHIKI KAIS·Filed 2000·Granted May 15, 2001·1 cites·12 claims
- 1943US5539668AOptical switching apparatusMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jul 23, 1996·11 cites·23 claims
- 2042US2011316047A1Semiconductor device and manufacturing method of the sameNANJO TAKUMA·Filed 2011·Application pending·0 cites
- 2141US2009170304A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 2238US5285080AMethod of selective light detectionMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Feb 8, 1994·7 cites·9 claims
- 2336US6373108B1Semiconductor device having reduced sheet resistance of source/drain regionsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 16, 2002·5 cites·7 claims
- 2436US2002011635A1Semiconductor device and production method thereofFiled 2000·Application pending·0 cites
- 2530US5097306AMethod of tristable selective light detection with pin diodeMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Mar 17, 1992·2 cites·3 claims
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