Inventor
Malinowski Arkadiusz
DE12 patents
⚠️ This page may combine multiple inventors who share the name “Malinowski Arkadiusz”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES US INC
10 patentsUS11804542B2Oct 31, 2023
Annular bipolar transistors
GLOBALFOUNDRIES US INC0 citations61
US11424349B1Aug 23, 2022
Extended shallow trench isolation for ultra-low leakage in fin-type lateral bipolar junction transistor devices
GLOBALFOUNDRIES US INC0 citations61
US11239315B2Feb 1, 2022
Dual trench isolation structures
GLOBALFOUNDRIES US INC0 citations55
US11362177B2Jun 14, 2022
Epitaxial semiconductor material regions for transistor devices and methods of forming same
GLOBALFOUNDRIES US INC0 citations51
US11205699B2Dec 21, 2021
Epitaxial semiconductor material regions for transistor devices and methods of forming same
GLOBALFOUNDRIES US INC0 citations51
US12408417B2Sep 2, 2025
Forksheet semiconductor structure including at least one bipolar junction transistor and method
GLOBALFOUNDRIES US INC0 citations50
US11916136B2Feb 27, 2024
Lateral bipolar junction transistors including a graded silicon-germanium intrinsic base
GLOBALFOUNDRIES US INC0 citations50
US11646361B2May 9, 2023
Electrical isolation structure using reverse dopant implantation from source/drain region in semiconductor fin
GLOBALFOUNDRIES US INC0 citations50
US11462632B2Oct 4, 2022
Lateral bipolar junction transistor device and method of making such a device
GLOBALFOUNDRIES US INC0 citations50
US11094822B1Aug 17, 2021
Source/drain regions for transistor devices and methods of forming same
GLOBALFOUNDRIES US INC0 citations50
GLOBALFOUNDRIES INC
2 patentsUS9812573B1Nov 7, 2017
Semiconductor structure including a transistor having stress creating regions and method for the formation thereof
GLOBALFOUNDRIES INC7 citations82
US10546943B2Jan 28, 2020
Methods, apparatus, and system for reducing leakage current in semiconductor devices
GLOBALFOUNDRIES INC0 citations40