Inventor · disambiguated record
Yoshiaki Hisamoto
Also filed as: HISAMOTO YOSHIAKI
11 granted patents·89 citations·filing 1984–2011
89Inventor score
Top patents by PatentIndex Score
11 records- 0178US8017974B2Semiconductor device with increased withstand voltageMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Sep 13, 2011·7 cites·7 claims
- 0272US8274095B2Semiconductor deviceHISAMOTO YOSHIAKI·Filed 2011·Granted Sep 25, 2012·4 cites·7 claims
- 0372US6580121B2Power semiconductor device containing at least one zener diode provided in chip periphery portionMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 17, 2003·20 cites·6 claims
- 0457US5545573AMethod of fabricating insulated gate semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 13, 1996·18 cites·25 claims
- 0554US7180106B2Semiconductor device having enhanced di/dt tolerance and dV/dt toleranceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 20, 2007·5 cites·13 claims
- 0654US5321295AInsulated gate bipolar transistor and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jun 14, 1994·15 cites·13 claims
- 0748US8692323B2Semiconductor device with peripheral base region connected to main electrodeHATADE KAZUNARI·Filed 2011·Granted Apr 8, 2014·0 cites·6 claims
- 0847US5246877AMethod of manufacturing a semiconductor device having a polycrystalline electrode regionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Sep 21, 1993·17 cites·5 claims
- 0946US8183631B2Semiconductor deviceHATADE KAZUNARI·Filed 2006·Granted May 22, 2012·0 cites·2 claims
- 1038US8742474B2Power semiconductor device having an active region and an electric field reduction regionHISAMOTO YOSHIAKI·Filed 2007·Granted Jun 3, 2014·0 cites·8 claims
- 1131US4609933AGate turn-off thyristor having P+ gate and emitterMITSUBISHI ELECTRIC CORP·Filed 1984·Granted Sep 2, 1986·3 cites·11 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →