Inventor · disambiguated record
Yue-Der Chih
Also filed as: CHIH YUE-DER
105 granted patents·5 pending applications·743 citations·filing 1998–2021
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG44TAIWAN SEMICONDUCTOR MFG CO LTD38CHIH YUE-DER9YU HUNG-CHANG6YANG TIEN-CHUN3
Top patents by PatentIndex Score
110 records- 0198US9792987B1Resistive random access memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·35 cites·20 claims
- 0298US9165629B2Method and apparatus for MRAM sense reference trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 20, 2015·61 cites·18 claims
- 0396US9787176B2Charge pumpTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 10, 2017·13 cites·20 claims
- 0496US8687412B2Reference cell configuration for sensing resistance states of MRAM bit cellsCHIH YUE-DER·Filed 2012·Granted Apr 1, 2014·39 cites·19 claims
- 0596US8593854B1Structure and method for forming conductive path in resistive random-access memory deviceCHIH YUE-DER·Filed 2012·Granted Nov 26, 2013·27 cites·20 claims
- 0694US8629706B2Power switch and operation method thereofCHEN HSU-SHUN·Filed 2011·Granted Jan 14, 2014·21 cites·19 claims
- 0793US8902641B2Adjusting reference resistances in determining MRAM resistance statesCHIH YUE-DER·Filed 2012·Granted Dec 2, 2014·19 cites·19 claims
- 0892US9437257B2Sensing circuit, memory device and data detecting methodYANG TIEN-CHUN·Filed 2013·Granted Sep 6, 2016·17 cites·20 claims
- 0992US9153343B2Memory device having RRAM-based non-volatile storage arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 6, 2015·13 cites·20 claims
- 1091US9680012B1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·7 cites·20 claims
- 1191US9196360B2Operating resistive memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 24, 2015·14 cites·20 claims
- 1291US8923040B2Accommodating balance of bit line and source line resistances in magnetoresistive random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 30, 2014·15 cites·20 claims
- 1390US9455006B2Memory devices with improved refreshing operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 27, 2016·7 cites·20 claims
- 1490US9208847B2Memory devices with improved refreshing operationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 8, 2015·8 cites·20 claims
- 1590US8817553B2Charge pump control scheme using frequency modulation for memory word lineYU HUNG-CHANG·Filed 2011·Granted Aug 26, 2014·11 cites·19 claims
- 1690US8509003B2Read architecture for MRAMLIN KAI-CHUN·Filed 2011·Granted Aug 13, 2013·16 cites·23 claims
- 1789US9406367B2Method and apparatus for MRAM sense reference trimmingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 2, 2016·8 cites·20 claims
- 1889US7663916B2Logic compatible arrays and operationsTAIWAN SEMICONDCUTOR MFG COMPA·Filed 2007·Granted Feb 16, 2010·22 cites·17 claims
- 1988US9459642B2Low dropout regulator and related methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 4, 2016·9 cites·20 claims
- 2088US7119604B2Back-bias voltage regulator having temperature and process variation compensation and related method of regulating a back-bias voltageTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 10, 2006·39 cites·22 claims
- 2187US9401258B2Fuse structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 26, 2016·10 cites·20 claims
- 2287US8325521B2Structure and inhibited operation of flash memory with split gateHSIEH CHIA-TA·Filed 2010·Granted Dec 4, 2012·13 cites·20 claims
- 2387US7495958B2Program and erase methods and structures for byte-alterable flash memoryTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 24, 2009·16 cites·38 claims
- 2486US8964458B2Differential MRAM structure with relatively reversed magnetic tunnel junction elements enabling writing using same polarity currentLIN KAI-CHUN·Filed 2012·Granted Feb 24, 2015·13 cites·17 claims
- 2586US7259543B2Sub-1V bandgap reference circuitTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 21, 2007·16 cites·16 claims
- 2682US10475490B2Memory devices with improved refreshing operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·3 cites·20 claims
- 2780US11043249B2Memory devices with improved refreshing operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·2 cites·20 claims
- 2880US9747159B2MRAM smart bit write algorithm with error correction parity bitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 29, 2017·3 cites·20 claims
- 2980US9110829B2MRAM smart bit write algorithm with error correction parity bitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 18, 2015·6 cites·18 claims
- 3078US8610220B2Semiconductor device with self-aligned interconnectsCHIH YUE-DER·Filed 2012·Granted Dec 17, 2013·4 cites·19 claims
- 3178US7626224B2Semiconductor device with split gate memory cell and fabrication method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 1, 2009·6 cites·13 claims
- 3277US6566847B1Low power charge pump regulating circuitTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 20, 2003·25 cites·27 claims
- 3376US9812182B2Memory devices with improved refreshing operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·2 cites·20 claims
- 3476US9190995B2Multiple power domain electronic device and related methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·3 cites·20 claims
- 3576US6348832B1Reference current generator with small temperature dependenceTAIWAN SEMICONDUCTOR MFG CO IN·Filed 2000·Granted Feb 19, 2002·25 cites·11 claims
- 3675US8928372B2Multiple power domain electronic device and related methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·3 cites·20 claims
- 3775US8654589B2Charge pump control scheme for memory word lineYU HUNG-CHANG·Filed 2010·Granted Feb 18, 2014·4 cites·18 claims
- 3874US9413140B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·2 cites·20 claims
- 3974US9171120B2Method of converting between non-volatile memory technologies and system for implementing the methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 27, 2015·2 cites·20 claims
- 4074US8369180B2Memory word line boost using thin dielectric capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 5, 2013·4 cites·20 claims
- 4174US7319609B2Non-volatile memory device with a programming current control schemeTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 15, 2008·9 cites·13 claims
- 4274US6808985B1Products derived from embedded flash/EEPROM productsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Oct 26, 2004·21 cites·31 claims
- 4374US6226213B1Reference cell array to generate the reference current for sense amplifierTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted May 1, 2001·22 cites·4 claims
- 4473US9368552B2Resistive memory array and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 14, 2016·2 cites·19 claims
- 4572US11935620B2Memory devices with improved refreshing operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·20 claims
- 4671US10141063B2Memory controller, memory device and method of operatingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 27, 2018·4 cites·20 claims
- 4771US9576949B2Diode formed of PMOSFET and schottky diodesLEE JAM-WEM·Filed 2012·Granted Feb 21, 2017·3 cites·20 claims
- 4871US8536039B2Nano-crystal gate structure for non-volatile memoryCHIH YUE-DER·Filed 2010·Granted Sep 17, 2013·3 cites·20 claims
- 4968US9275732B2Write buffer for resistive random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 1, 2016·4 cites·20 claims
- 5067US8565023B2Concurrent operation of plural flash memoriesTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Oct 22, 2013·2 cites·20 claims
Showing the top 50 of 110 patent records by PatentIndex Score.
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