Inventor · disambiguated record
Dennis M. Newns
Also filed as: NEWNS DENNIS · NEWNS DENNIS M · NEWNS DENNIS MERTON
75 granted patents·9 pending applications·1,252 citations·filing 1998–2023
99Inventor score
Top patents by PatentIndex Score
84 records- 0197US7411818B1Programmable fuse/non-volatile memory structures using externally heated phase change materialIBM·Filed 2007·Granted Aug 12, 2008·50 cites·5 claims
- 0297US7394089B2Heat-shielded low power PCM-based reprogrammable EFUSE deviceIBM·Filed 2006·Granted Jul 1, 2008·76 cites·3 claims
- 0396US8405279B2Coupling piezoelectric material generated stresses to devices formed in integrated circuitsELMEGREEN BRUCE G·Filed 2012·Granted Mar 26, 2013·23 cites·27 claims
- 0496US7692959B2Multilayer storage class memory using externally heated phase change materialIBM·Filed 2008·Granted Apr 6, 2010·48 cites·20 claims
- 0596US6515957B1Ferroelectric drive for data storageIBM·Filed 1999·Granted Feb 4, 2003·163 cites·18 claims
- 0696US6121642AJunction mott transition field effect transistor (JMTFET) and switch for logic and memory applicationsIBM·Filed 1998·Granted Sep 19, 2000·144 cites·24 claims
- 0795US7221579B2Method and structure for high performance phase change memoryIBM·Filed 2005·Granted May 22, 2007·67 cites·20 claims
- 0894US6738954B1Method for prediction random defect yields of integrated circuits with accuracy and computation time controlsIBM·Filed 2000·Granted May 18, 2004·98 cites·36 claims
- 0993US10186657B2Three-terminal metastable symmetric zero-volt battery memristive deviceIBM·Filed 2017·Granted Jan 22, 2019·10 cites·9 claims
- 1093US8159854B2Piezo-effect transistor device and applicationsELMEGREEN BRUCE G·Filed 2009·Granted Apr 17, 2012·27 cites·32 claims
- 1192US7633079B2Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change materialIBM·Filed 2007·Granted Dec 15, 2009·26 cites·20 claims
- 1291US10332874B2Indirect readout FETIBM·Filed 2017·Granted Jun 25, 2019·6 cites·12 claims
- 1391US8247947B2Coupling piezoelectric material generated stresses to devices formed in integrated circuitsELMEGREEN BRUCE G·Filed 2009·Granted Aug 21, 2012·18 cites·22 claims
- 1491US7848135B2Piezo-driven non-volatile memory cell with hysteretic resistanceIBM·Filed 2008·Granted Dec 7, 2010·30 cites·24 claims
- 1589US10468432B1BEOL cross-bar array ferroelectric synapse units for domain wall movementIBM·Filed 2018·Granted Nov 5, 2019·7 cites·20 claims
- 1689US9142471B2Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomeshIBM·Filed 2014·Granted Sep 22, 2015·10 cites·18 claims
- 1789US8900538B2Doped, passivated graphene nanomesh, method of making the doped, passivated graphene nanomesh, and semiconductor device including the doped, passivated graphene nanomeshABOU-KANDIL AHMED·Filed 2011·Granted Dec 2, 2014·12 cites·20 claims
- 1889US7969770B2Programmable via devices in back end of line levelIBM·Filed 2007·Granted Jun 28, 2011·13 cites·19 claims
- 1989US7652279B2Three-terminal cascade switch for controlling static power consumption in integrated circuitsIBM·Filed 2008·Granted Jan 26, 2010·12 cites·7 claims
- 2089US6984846B2Gradiometer-based flux qubit for quantum computing and method thereforIBM·Filed 2003·Granted Jan 10, 2006·79 cites·24 claims
- 2188US10164179B2Memristive device based on alkali-doping of transitional metal oxidesIBM·Filed 2017·Granted Dec 25, 2018·8 cites·15 claims
- 2287US9590167B2Low voltage transistor and logic devices with multiple, stacked piezoelectronic layersIBM·Filed 2016·Granted Mar 7, 2017·4 cites·1 claims
- 2387US9425381B2Low voltage transistor and logic devices with multiple, stacked piezoelectronic layersIBM·Filed 2014·Granted Aug 23, 2016·4 cites·19 claims
- 2487US7659534B2Programmable via devices with air gap isolationIBM·Filed 2007·Granted Feb 9, 2010·12 cites·21 claims
- 2586US7750335B2Phase change material structure and related methodIBM·Filed 2007·Granted Jul 6, 2010·16 cites·11 claims
- 2685US9472368B2Piezoelectronic switch device for RF applicationsIBM·Filed 2014·Granted Oct 18, 2016·4 cites·16 claims
- 2784US6495854B1Quantum computing with d-wave superconductorsIBM·Filed 1999·Granted Dec 17, 2002·81 cites·6 claims
- 2883US6649929B2Quantum computing with d-wave superconductorsIBM·Filed 2002·Granted Nov 18, 2003·35 cites·18 claims
- 2983US6128178AVery thin film capacitor for dynamic random access memory (DRAM)IBM·Filed 1998·Granted Oct 3, 2000·52 cites·26 claims
- 3082US10964881B2Piezoelectronic device with novel force amplificationIBM·Filed 2017·Granted Mar 30, 2021·3 cites·15 claims
- 3182US9679645B2Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanenceIBM·Filed 2015·Granted Jun 13, 2017·5 cites·11 claims
- 3282US9251884B2Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanenceIBM·Filed 2014·Granted Feb 2, 2016·6 cites·8 claims
- 3382US9058868B2Piezoelectronic memoryIBM·Filed 2012·Granted Jun 16, 2015·7 cites·25 claims
- 3482US8275727B2Hardware analog-digital neural networksELMEGREEN BRUCE G·Filed 2009·Granted Sep 25, 2012·23 cites·17 claims
- 3578US10680105B2Mobile ferroelectric single domain wall implementation of a symmetric resistive processing unitIBM·Filed 2017·Granted Jun 9, 2020·2 cites·6 claims
- 3677US8125823B2Method and structure for ultra-high density, high data rate ferroelectric storage disk technology using stabilization by a surface conducting layerNEWNS DENNIS M·Filed 2009·Granted Feb 28, 2012·2 cites·20 claims
- 3776US12026609B2Area and power efficient implementation of resistive processing units using complementary metal oxide semiconductor technologyIBM·Filed 2023·Granted Jul 2, 2024·0 cites·20 claims
- 3876US9651518B2Nano-fluidic field effective device to control DNA transport through the sameIBM·Filed 2014·Granted May 16, 2017·2 cites·14 claims
- 3976US9524033B2Wireless keyboardIBM·Filed 2013·Granted Dec 20, 2016·3 cites·10 claims
- 4076US8940148B2Nano-fluidic field effective device to control DNA transport through the sameAFZALI-ARDAKANI ALI·Filed 2010·Granted Jan 27, 2015·2 cites·10 claims
- 4176US7545667B2Programmable via structure for three dimensional integration technologyIBM·Filed 2006·Granted Jun 9, 2009·6 cites·3 claims
- 4273US6274916B1Ultrafast nanoscale field effect transistorIBM·Filed 1999·Granted Aug 14, 2001·27 cites·20 claims
- 4371US7732798B2Programmable via structure for three dimensional integration technologyIBM·Filed 2008·Granted Jun 8, 2010·4 cites·9 claims
- 4471US7491965B2Heat-shielded low power PCM-based reprogrammable eFUSE deviceIBM·Filed 2008·Granted Feb 17, 2009·6 cites·17 claims
- 4570US9466781B2Low voltage transistor and logic devices with multiple, stacked piezoelectronic layersIBM·Filed 2016·Granted Oct 11, 2016·1 cites·1 claims
- 4669US10984306B2Battery-based neural network weightsIBM·Filed 2017·Granted Apr 20, 2021·0 cites·14 claims
- 4769US8737121B2Drift-insensitive or invariant material for phase change memoryLAM CHUNG H·Filed 2012·Granted May 27, 2014·3 cites·18 claims
- 4868US9941472B2Piezoelectronic device with novel force amplificationIBM·Filed 2014·Granted Apr 10, 2018·1 cites·27 claims
- 4968US8466444B2Three-terminal cascade switch for controlling static power consumption in integrated circuitsKRUSIN-ELBAUM LIA·Filed 2012·Granted Jun 18, 2013·1 cites·6 claims
- 5068US7534710B2Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making sameIBM·Filed 2005·Granted May 19, 2009·4 cites·11 claims
Showing the top 50 of 84 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →