Inventor · disambiguated record
Stuart Stephen Papworth Parkin
Also filed as: PARKIN STUART · PARKIN STUART S · PARKIN STUART S P · PARKIN STUART STEPHEN P
114 granted patents·4 pending applications·9,375 citations·filing 1988–2021
99Inventor score
Top patents by PatentIndex Score
118 records- 0199US5764567AMagnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field responseIBM·Filed 1996·Granted Jun 9, 1998·262 cites·21 claims
- 0299US5650958AMagnetic tunnel junctions with controlled magnetic responseIBM·Filed 1996·Granted Jul 22, 1997·521 cites·9 claims
- 0399US5640343AMagnetic memory array using magnetic tunnel junction devices in the memory cellsIBM·Filed 1996·Granted Jun 17, 1997·1.2k cites·13 claims
- 0498US10177305B2Templating layers for perpendicularly magnetized heusler filmsIBM·Filed 2017·Granted Jan 8, 2019·12 cites·27 claims
- 0598US7443639B2Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materialsIBM·Filed 2005·Granted Oct 28, 2008·64 cites·1 claims
- 0698US7252852B1Mg-Zn oxide tunnel barriers and method of formationIBM·Filed 2004·Granted Aug 7, 2007·115 cites·43 claims
- 0798US7230265B2Spin-polarization devices using rare earth-transition metal alloysIBM·Filed 2005·Granted Jun 12, 2007·163 cites·49 claims
- 0898US6834005B1Shiftable magnetic shift register and method of using the sameIBM·Filed 2003·Granted Dec 21, 2004·349 cites·70 claims
- 0998US6166948AMagnetic memory array with magnetic tunnel junction memory cells having flux-closed free layersIBM·Filed 1999·Granted Dec 26, 2000·386 cites·17 claims
- 1098US6023395AMagnetic tunnel junction magnetoresistive sensor with in-stack biasingIBM·Filed 1998·Granted Feb 8, 2000·235 cites·28 claims
- 1198US5966012AMagnetic tunnel junction device with improved fixed and free ferromagnetic layersIBM·Filed 1997·Granted Oct 12, 1999·154 cites·12 claims
- 1298US5898548AShielded magnetic tunnel junction magnetoresistive read headIBM·Filed 1997·Granted Apr 27, 1999·190 cites·26 claims
- 1398US5841692AMagnetic tunnel junction device with antiferromagnetically coupled pinned layerIBM·Filed 1997·Granted Nov 24, 1998·261 cites·5 claims
- 1498US5465185AMagnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensorIBM·Filed 1993·Granted Nov 7, 1995·358 cites·46 claims
- 1598US5408377AMagnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensorIBM·Filed 1993·Granted Apr 18, 1995·289 cites·30 claims
- 1698US5206590AMagnetoresistive sensor based on the spin valve effectIBM·Filed 1990·Granted Apr 27, 1993·477 cites·16 claims
- 1797US7276384B2Magnetic tunnel junctions with improved tunneling magneto-resistanceIBM·Filed 2005·Granted Oct 2, 2007·57 cites·13 claims
- 1897US6331944B1Magnetic random access memory using a series tunnel element select mechanismIBM·Filed 2000·Granted Dec 18, 2001·160 cites·22 claims
- 1997US6269018B1Magnetic random access memory using current through MTJ write mechanismIBM·Filed 2000·Granted Jul 31, 2001·172 cites·35 claims
- 2097US5898547AMagnetic tunnel junction magnetoresistive read head with sensing layer as flux guideIBM·Filed 1997·Granted Apr 27, 1999·150 cites·31 claims
- 2197US5159513AMagnetoresistive sensor based on the spin valve effectIBM·Filed 1991·Granted Oct 27, 1992·268 cites·20 claims
- 2296US10396123B2Templating layers for perpendicularly magnetized Heusler filmsIBM·Filed 2017·Granted Aug 27, 2019·9 cites·29 claims
- 2396US7666467B2Magnetic tunnel junctions using amorphous materials as reference and free layersIBM·Filed 2007·Granted Feb 23, 2010·23 cites·21 claims
- 2496US7551469B1Unidirectional racetrack memory deviceIBM·Filed 2009·Granted Jun 23, 2009·48 cites·18 claims
- 2596US7349187B2Tunnel barriers based on alkaline earth oxidesIBM·Filed 2005·Granted Mar 25, 2008·39 cites·20 claims
- 2696US7274080B1MgO-based tunnel spin injectorsIBM·Filed 2004·Granted Sep 25, 2007·103 cites·98 claims
- 2796US7031178B2Magnetic shift register with shiftable magnetic domains between two regions, and method of using the sameIBM·Filed 2004·Granted Apr 18, 2006·124 cites·76 claims
- 2896US6518588B1Magnetic random access memory with thermally stable magnetic tunnel junction cellsIBM·Filed 2001·Granted Feb 11, 2003·141 cites·9 claims
- 2996US6452764B1Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devicesIBM·Filed 2000·Granted Sep 17, 2002·76 cites·33 claims
- 3096US6114719AMagnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cellIBM·Filed 1998·Granted Sep 5, 2000·213 cites·37 claims
- 3196US5801984AMagnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic momentIBM·Filed 1996·Granted Sep 1, 1998·175 cites·30 claims
- 3295US6898132B2System and method for writing to a magnetic shift registerIBM·Filed 2003·Granted May 24, 2005·106 cites·35 claims
- 3395US6650513B2Magnetic devices with a ferromagnetic layer having perpendicular magnetic anisotropy and an antiferromagnetic layer for perpendicularly exchange biasing the ferromagnetic layerIBM·Filed 2001·Granted Nov 18, 2003·72 cites·1 claims
- 3495US5901018AMagnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guideIBM·Filed 1997·Granted May 4, 1999·110 cites·26 claims
- 3595US5729410AMagnetic tunnel junction device with longitudinal biasingIBM·Filed 1996·Granted Mar 17, 1998·284 cites·14 claims
- 3694US8687415B2Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfacesPARKIN STUART STEPHEN PAPWORTH·Filed 2012·Granted Apr 1, 2014·37 cites·44 claims
- 3794US7570463B2Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materialsIBM·Filed 2008·Granted Aug 4, 2009·31 cites·25 claims
- 3894US7351483B2Magnetic tunnel junctions using amorphous materials as reference and free layersIBM·Filed 2004·Granted Apr 1, 2008·40 cites·69 claims
- 3994US7313013B2Spin-current switchable magnetic memory element and method of fabricating the memory elementIBM·Filed 2004·Granted Dec 25, 2007·63 cites·30 claims
- 4094US7270896B2High performance magnetic tunnel barriers with amorphous materialsIBM·Filed 2004·Granted Sep 18, 2007·73 cites·70 claims
- 4194US7236386B2System and method for transferring data to and from a magnetic shift register with a shiftable data columnIBM·Filed 2004·Granted Jun 26, 2007·91 cites·56 claims
- 4294US6538919B1Magnetic tunnel junctions using ferrimagnetic materialsIBM·Filed 2000·Granted Mar 25, 2003·74 cites·20 claims
- 4394US6226160B1Small area magnetic tunnel junction devices with low resistance and high magnetoresistanceIBM·Filed 1999·Granted May 1, 2001·86 cites·6 claims
- 4493US7807218B2High performance magnetic tunnel barriers with amorphous materialsIBM·Filed 2007·Granted Oct 5, 2010·20 cites·23 claims
- 4593US7602000B2Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory elementIBM·Filed 2003·Granted Oct 13, 2009·58 cites·38 claims
- 4693US7315470B2Data storage device and associated method for writing data to, and reading data from an unpatterned magnetic layerIBM·Filed 2005·Granted Jan 1, 2008·24 cites·20 claims
- 4793US6920062B2System and method for reading data stored on a magnetic shift registerIBM·Filed 2003·Granted Jul 19, 2005·83 cites·52 claims
- 4893US5585986ADigital magnetoresistive sensor based on the giant magnetoresistance effectIBM·Filed 1995·Granted Dec 17, 1996·96 cites·18 claims
- 4993US5583727AMultiple data layer magnetic recording data storage system with digital magnetoresistive read sensorIBM·Filed 1995·Granted Dec 10, 1996·96 cites·28 claims
- 5092US8008097B2MgO tunnel barriers and method of formationIBM·Filed 2009·Granted Aug 30, 2011·20 cites·52 claims
Showing the top 50 of 118 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →