Inventor · disambiguated record
Jong-Hyeob Baek
Also filed as: BAEK JONG HYEOB
20 granted patents·1 pending application·132 citations·filing 1994–2017
94Inventor score
Files withKOREA ELECTRONICS TELECOMM12KOREA PHOTONICS TECH INST3KIM SANG MOOK2BAEK JONG-HYEOB1JU JIN WOO1
Top patents by PatentIndex Score
21 records- 0187US10355166B2Light-emitting diode structure, transfer assembly, and transfer method using the sameKOREA PHOTONICS TECH INST·Filed 2017·Granted Jul 16, 2019·7 cites·21 claims
- 0278US8710520B2Light emitting diode having multi-cell structure and method of manufacturing the sameKIM SANG-MOOK·Filed 2010·Granted Apr 29, 2014·4 cites·20 claims
- 0370US7977223B2Method of forming nitride semiconductor and electronic device comprising the sameUNIV IND & ACAD COLLABORATION·Filed 2009·Granted Jul 12, 2011·4 cites·14 claims
- 0465US9171717B2Method for manufacturing a group III nitride substrate using a chemical lift-off processJU JIN WOO·Filed 2011·Granted Oct 27, 2015·4 cites·15 claims
- 0560US5472505AApparatus for monitoring films during MOCVDKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Dec 5, 1995·20 cites·4 claims
- 0659US8847267B2Light emitting diode with metal piles and multi-passivation layers and its manufacturing methodKIM SANG MOOK·Filed 2008·Granted Sep 30, 2014·3 cites·14 claims
- 0755US6410347B1Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometryKOREA ELECTRONICS TELECOMM·Filed 1999·Granted Jun 25, 2002·19 cites·9 claims
- 0851US9000414B2Light emitting diode having heterogeneous protrusion structuresKOREA PHOTONICS TECH INST·Filed 2012·Granted Apr 7, 2015·0 cites·6 claims
- 0949US5456206AMethod for two-dimensional epitaxial growth of III-V compound semiconductorsKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Oct 10, 1995·19 cites·6 claims
- 1048US8294167B2Light emitting diode with high electrostatic discharge and fabrication method thereofBAEK JONG-HYEOB·Filed 2008·Granted Oct 23, 2012·1 cites·13 claims
- 1148US2014000689A1Nitride semiconductor-based solar cell and manufacturing method thereofLEE DONG SEON·Filed 2011·Application pending·0 cites
- 1244US10662511B2Nitride semiconductor light-emitting device, and method for manufacturing sameKOREA PHOTONICS TECH INST·Filed 2015·Granted May 26, 2020·0 cites·3 claims
- 1342US5705403AMethod of measuring doping characteristic of compound semiconductor in real timeKOREA ELECTRONICS TELECOMM·Filed 1996·Granted Jan 6, 1998·10 cites·5 claims
- 1442US5686350AMethod for fabricating defect-free compound semiconductor thin film on dielectric thin filmKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Nov 11, 1997·12 cites·8 claims
- 1540US6181843B1Optical switch of surface transmission type by one-dimensional array methodKOREA ELECTRONICS TELECOMM·Filed 1998·Granted Jan 30, 2001·9 cites·4 claims
- 1637US6193900B1Method for sensing etch of distributed bragg reflector in real timeKOREA ELECTRONICS TELECOMM·Filed 1998·Granted Feb 27, 2001·6 cites·1 claims
- 1735US5856206AMethod for fabricating bragg reflector using in situ laser reflectometryKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Jan 5, 1999·6 cites·4 claims
- 1833US5748319AMethod for sensing complete removal of oxide layer from substrate by thermal etching with real timeKOREA ELECTRONICS TELECOMM·Filed 1996·Granted May 5, 1998·4 cites·4 claims
- 1931US5900056AMethod for growing epitaxial layers of III-V compound semiconductorsKOREA ELECTRONICS TELECOMM·Filed 1996·Granted May 4, 1999·1 cites·6 claims
- 2031US5883911ASurface-emitting laser deviceKOREA ELECTRONICS TELECOMM·Filed 1996·Granted Mar 16, 1999·3 cites·4 claims
- 2129US5855669AMethod for fabricating grating couplerKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Jan 5, 1999·0 cites·5 claims
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