Inventor · disambiguated record
Amol Kalburge
Also filed as: KALBURGE AMOL · KALBURGE AMOL M
27 granted patents·2 pending applications·165 citations·filing 2002–2009
96Inventor score
Top patents by PatentIndex Score
29 records- 0191US7858454B2Self-aligned T-gate carbon nanotube field effect transistor devices and method for forming the sameRF NANO CORP·Filed 2008·Granted Dec 28, 2010·23 cites·10 claims
- 0284US7772673B1Deep trench isolation and method for forming sameNEWPORT FAB LLC·Filed 2007·Granted Aug 10, 2010·12 cites·17 claims
- 0379US7291536B1Fabricating a self-aligned bipolar transistor having increased manufacturabilityNEWPORT FAB LLC·Filed 2005·Granted Nov 6, 2007·7 cites·14 claims
- 0473US6586307B1Method for controlling an emitter window opening in an HBT and related structureNEWPORT FAB LLC·Filed 2002·Granted Jul 1, 2003·14 cites·10 claims
- 0571US7015115B1Method for forming deep trench isolation and related structureNEWPORT FAB LLC·Filed 2003·Granted Mar 21, 2006·18 cites·8 claims
- 0671US6933202B1Method for integrating SiGe NPN and vertical PNP devices on a substrate and related structureNEWPORT FAB LLC·Filed 2004·Granted Aug 23, 2005·13 cites·20 claims
- 0771US6830967B1Method for forming CMOS transistor spacers in a BiCMOS processNEWPORT FAB LLC·Filed 2002·Granted Dec 14, 2004·14 cites·24 claims
- 0870US6797580B1Method for fabricating a bipolar transistor in a BiCMOS process and related structureNEWPORT FAB LLC·Filed 2003·Granted Sep 28, 2004·13 cites·16 claims
- 0968US6992338B1CMOS transistor spacers formed in a BiCMOS processNEWPORT FAB LLC·Filed 2004·Granted Jan 31, 2006·11 cites·12 claims
- 1065US7816906B2Method for determining anisotropy of 1-D conductor or semiconductor synthesisRF NANO CORP·Filed 2008·Granted Oct 19, 2010·2 cites·20 claims
- 1164US6995449B1Deep trench isolation region with reduced-size cavities in overlying field oxideNEWPORT FAB LLC·Filed 2004·Granted Feb 7, 2006·10 cites·19 claims
- 1264US6784467B1Method for fabricating a self-aligned bipolar transistor and related structureNEWPORT FAB LLC·Filed 2002·Granted Aug 31, 2004·9 cites·17 claims
- 1359US6770541B1Method for hard mask removal for deep trench isolation and related structureNEWPORT FAB LLC·Filed 2003·Granted Aug 3, 2004·7 cites·7 claims
- 1457US7871851B2Method for integrating nanotube devices with CMOS for RF/analog SoC applicationsRF Nano·Filed 2008·Granted Jan 18, 2011·2 cites·10 claims
- 1553US7863148B2Method for integrating SiGe NPN and vertical PNP devicesNEWPORT FAB LLC·Filed 2009·Granted Jan 4, 2011·0 cites·20 claims
- 1647US7541231B1Integration of SiGe NPN and vertical PNP devices on a substrateNEWPORT FAB LLC·Filed 2005·Granted Jun 2, 2009·0 cites·17 claims
- 1747US6894328B2Self-aligned bipolar transistor having recessed spacers and method for fabricating sameNEWPORT FAB LLC·Filed 2003·Granted May 17, 2005·3 cites·13 claims
- 1847US6765243B1HBT having a controlled emitter window openingNEWPORT FAB LLC·Filed 2002·Granted Jul 20, 2004·2 cites·12 claims
- 1946US7064415B1Self-aligned bipolar transistor having increased manufacturabilityNEWPORT FAB LLC·Filed 2004·Granted Jun 20, 2006·2 cites·11 claims
- 2046US6867440B1Self-aligned bipolar transistor without spacers and method for fabricating sameNEWPORT FAB LLC·Filed 2003·Granted Mar 15, 2005·2 cites·12 claims
- 2145US2008293228A1CMOS Compatible Method of Forming Source/Drain Contacts for Self-Aligned Nanotube DevicesKALBURGE AMOL M·Filed 2008·Application pending·0 cites
- 2243US7282418B1Method for fabricating a self-aligned bipolar transistor without spacersNEWPORT FAB LLC·Filed 2004·Granted Oct 16, 2007·1 cites·6 claims
- 2343US2009114903A1Integrated Nanotube and CMOS Devices For System-On-Chip (SoC) Applications and Method for Forming The SameKALBURGE AMOL M·Filed 2008·Application pending·0 cites
- 2440US7041564B1Method for fabricating a self-aligned bipolar transistorNEWPORT FAB LLC·Filed 2004·Granted May 9, 2006·0 cites·14 claims
- 2539US7994611B1Bipolar transistor fabricated in a biCMOS processNEWPORT FAB LLC·Filed 2004·Granted Aug 9, 2011·0 cites·10 claims
- 2639US6764913B1Method for controlling an emitter window opening in an HBT and related structureNEWPORT FAB LLC·Filed 2003·Granted Jul 20, 2004·0 cites·19 claims
- 2737US7033898B1Method for fabricating a self-aligned bipolar transistor having recessed spacersNEWPORT FAB LLC·Filed 2004·Granted Apr 25, 2006·0 cites·7 claims
- 2836US6809353B2Method for fabricating a self-aligned bipolar transistor with planarizing layer and related structureNEWPORT FAB LLC·Filed 2003·Granted Oct 26, 2004·0 cites·27 claims
- 2935US6979626B2Method for fabricating a self-aligned bipolar transistor having increased manufacturability and related structureNEWPORT FAB LLC·Filed 2003·Granted Dec 27, 2005·0 cites·3 claims
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