Inventor · disambiguated record
Jin-Man Han
Also filed as: HAN JIN · HAN JIN-MAN
70 granted patents·1 pending application·1,331 citations·filing 1991–2017
99Inventor score
Top patents by PatentIndex Score
71 records- 0199US7372715B2Architecture and method for NAND flash memoryMICRON TECHNOLOGY INC·Filed 2006·Granted May 13, 2008·438 cites·14 claims
- 0298US7345924B2Programming memory devicesMICRON TECHNOLOGY INC·Filed 2006·Granted Mar 18, 2008·59 cites·20 claims
- 0398US7269066B2Programming memory devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 11, 2007·59 cites·44 claims
- 0496US7196930B2Flash memory programming to reduce program disturbMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 27, 2007·43 cites·31 claims
- 0595US7778086B2Erase operation control sequencing apparatus, systems, and methodsMICRON TECHNOLOGY INC·Filed 2007·Granted Aug 17, 2010·32 cites·30 claims
- 0694US8120952B2Memory device with a decreasing dynamic pass voltage for reducing read-disturb effectHAN JIN-MAN·Filed 2010·Granted Feb 21, 2012·18 cites·25 claims
- 0793US7518914B2Non-volatile memory device with both single and multiple level cellsMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 14, 2009·22 cites·21 claims
- 0893US7324394B1Single data line sensing scheme for TCCT-based memory cellsT RAM SEMICONDUCTOR INC·Filed 2006·Granted Jan 29, 2008·29 cites·13 claims
- 0993US6611452B1Reference cells for TCCT based memory cellsT RAM INC·Filed 2002·Granted Aug 26, 2003·62 cites·39 claims
- 1092US7447847B2Memory device trimsMICRON TECHNOLOGY INC·Filed 2004·Granted Nov 4, 2008·58 cites·68 claims
- 1192US7123521B1Random cache readMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 17, 2006·31 cites·23 claims
- 1291US7949821B2Method of storing data on a flash memory deviceMICRON TECHNOLOGY INC·Filed 2008·Granted May 24, 2011·17 cites·24 claims
- 1391US7719888B2Memory device having a negatively ramping dynamic pass voltage for reducing read-disturb effectMICRON TECHNOLOGY INC·Filed 2008·Granted May 18, 2010·19 cites·33 claims
- 1490US8238164B2Method of programming nonvolatile memory deviceKIM MIN SEOK·Filed 2010·Granted Aug 7, 2012·13 cites·20 claims
- 1589US7558131B2NAND system with a data write frequency greater than a command-and-address-load frequencyMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 7, 2009·17 cites·46 claims
- 1688US7656740B2Wordline voltage transfer apparatus, systems, and methodsMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 2, 2010·14 cites·18 claims
- 1788US7505323B2Programming memory devicesMICRON TECHNOLOGY INC·Filed 2008·Granted Mar 17, 2009·12 cites·23 claims
- 1887US9147492B2Control method of nonvolatile memory deviceSHIM SUNIL·Filed 2014·Granted Sep 29, 2015·8 cites·19 claims
- 1987US8230165B2Method of storing data on a flash memory deviceHAN JIN-MAN·Filed 2011·Granted Jul 24, 2012·8 cites·19 claims
- 2086US7542336B2Architecture and method for NAND flash memoryMICRON TECHNOLOGY INC·Filed 2008·Granted Jun 2, 2009·13 cites·18 claims
- 2185US9230658B2Method of storing data on a flash memory deviceMICRON TECHNOLOGY INC·Filed 2013·Granted Jan 5, 2016·6 cites·23 claims
- 2284US10061647B2Nonvolatile memory devices, methods of operating the same and solid state drives including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 28, 2018·7 cites·20 claims
- 2384US6903987B2Single data line sensing scheme for TCCT-based memory cellsT RAM INC·Filed 2002·Granted Jun 7, 2005·23 cites·32 claims
- 2483US7630236B2Flash memory programming to reduce program disturbMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 8, 2009·12 cites·11 claims
- 2582US7400549B2Memory block reallocation in a flash memory deviceMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 15, 2008·8 cites·10 claims
- 2682US6778435B1Memory architecture for TCCT-based memory cellsT RAM INC·Filed 2002·Granted Aug 17, 2004·33 cites·7 claims
- 2780US7369447B2Random cache readMICRON TECHNOLOGY INC·Filed 2006·Granted May 6, 2008·11 cites·20 claims
- 2879US5936896AHigh speed and low power signal line driver and semiconductor memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 10, 1999·47 cites·36 claims
- 2978US10104776B2Chip resistor elementSAMSUNG ELECTRO MECH·Filed 2016·Granted Oct 16, 2018·2 cites·39 claims
- 3078US9691838B1Chip resistorSAMSUNG ELECTRO MECH·Filed 2016·Granted Jun 27, 2017·3 cites·35 claims
- 3174US8595423B2Method of storing data on a flash memory deviceHAN JIN-MAN·Filed 2012·Granted Nov 26, 2013·3 cites·20 claims
- 3274US5812466AColumn redundancy circuit for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 22, 1998·37 cites·10 claims
- 3373US8064258B2Method apparatus, and system providing adjustable memory page configurationHAN JIN-MAN·Filed 2009·Granted Nov 22, 2011·6 cites·20 claims
- 3472US8698593B2Chip resistor and method of manufacturing the samePARK JANG HO·Filed 2012·Granted Apr 15, 2014·3 cites·24 claims
- 3571US8072816B2Memory block reallocation in a flash memory deviceHAN JIN-MAN·Filed 2009·Granted Dec 6, 2011·5 cites·20 claims
- 3668US7548459B2Method, apparatus, and system providing adjustable memory page configurationMICRON TECHNOLOGY INC·Filed 2006·Granted Jun 16, 2009·5 cites·32 claims
- 3767US7808822B2Non-volatile memory device with both single and multiple level cellsROUND ROCK RES LLC·Filed 2009·Granted Oct 5, 2010·4 cites·24 claims
- 3866US8772857B2Vertical memory devices and methods of manufacturing the sameCHOE BYEONG-IN·Filed 2011·Granted Jul 8, 2014·2 cites·19 claims
- 3966US8379448B2Memory with interleaved read and redundant columnsMICRON TECHNOLOGY INC·Filed 2011·Granted Feb 19, 2013·2 cites·20 claims
- 4066US7688630B2Programming memory devicesMICRON TECHNOLOGY INC·Filed 2009·Granted Mar 30, 2010·3 cites·20 claims
- 4166US6845037B1Reference cells for TCCT based memory cellsT RAM INC·Filed 2003·Granted Jan 18, 2005·12 cites·2 claims
- 4264US8174900B2Wordline voltage transfer apparatus, systems, and methodsYU XIAOJUN·Filed 2010·Granted May 8, 2012·2 cites·20 claims
- 4363US6097649AMethod and structure for refresh operation with a low voltage of logic high in a memory deviceSILICON MAGIC CORP·Filed 1998·Granted Aug 1, 2000·25 cites·13 claims
- 4462US8264886B2Delayed activation of selected wordlines in memoryYU XIAOJUN·Filed 2010·Granted Sep 11, 2012·2 cites·13 claims
- 4561US7821830B2Flash memory device with redundant columnsMICRON TECHNOLOGY INC·Filed 2008·Granted Oct 26, 2010·3 cites·28 claims
- 4660US7649783B2Delayed activation of selected wordlines in memoryMICRON TECHNOLOGY INC·Filed 2007·Granted Jan 19, 2010·3 cites·30 claims
- 4759US8179721B2Non-volatile memory device with both single and multiple level cellsHAN JIN-MAN·Filed 2010·Granted May 15, 2012·1 cites·21 claims
- 4859US7006398B1Single data line sensing scheme for TCCT-based memory cellsT RAM INC·Filed 2004·Granted Feb 28, 2006·8 cites·10 claims
- 4959US5367491AApparatus for automatically initiating a stress mode of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Nov 22, 1994·18 cites·8 claims
- 5058US8259508B2Erase operation control sequencing apparatus, systems, and methodsYU XIAOJUN·Filed 2010·Granted Sep 4, 2012·1 cites·20 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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