Inventor · disambiguated record
Yasuto Sumi
Also filed as: SUMI YASUTO
19 granted patents·6 pending applications·175 citations·filing 2005–2015
94Inventor score
Top patents by PatentIndex Score
25 records- 0196US8013360B2Semiconductor device having a junction of P type pillar region and N type pillar regionTOSHIBA KK·Filed 2010·Granted Sep 6, 2011·29 cites·8 claims
- 0295US7737469B2Semiconductor device having superjunction structure formed of p-type and n-type pillar regionsTOSHIBA KK·Filed 2007·Granted Jun 15, 2010·36 cites·9 claims
- 0391US8487374B2Power semiconductor deviceOHTA HIROSHI·Filed 2011·Granted Jul 16, 2013·15 cites·19 claims
- 0490US7919824B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Apr 5, 2011·17 cites·14 claims
- 0588US9136324B2Power semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2013·Granted Sep 15, 2015·9 cites·12 claims
- 0687US8860144B2Power semiconductor deviceTOSHIBA KK·Filed 2013·Granted Oct 14, 2014·8 cites·4 claims
- 0787US8643056B2Power semiconductor device and method of manufacturing the sameKIMURA KIYOSHI·Filed 2011·Granted Feb 4, 2014·10 cites·13 claims
- 0884US7989910B2Semiconductor device including a resurf region with forward tapered teethTOSHIBA KK·Filed 2008·Granted Aug 2, 2011·11 cites·18 claims
- 0984US7605426B2Power semiconductor deviceTOSHIBA KK·Filed 2007·Granted Oct 20, 2009·11 cites·20 claims
- 1082US7622771B2Semiconductor apparatusTOSHIBA KK·Filed 2008·Granted Nov 24, 2009·10 cites·20 claims
- 1181US7759732B2Power semiconductor deviceTOSHIBA KK·Filed 2007·Granted Jul 20, 2010·8 cites·9 claims
- 1272US8907420B2Power semiconductor deviceSAITO WATARU·Filed 2010·Granted Dec 9, 2014·3 cites·10 claims
- 1368US8227854B2Semiconductor device having first and second resurf layersONO SYOTARO·Filed 2007·Granted Jul 24, 2012·4 cites·20 claims
- 1461US7285824B2Semiconductor device having a lateral diode structureTOSHIBA KK·Filed 2005·Granted Oct 23, 2007·2 cites·20 claims
- 1557US8610210B2Power semiconductor device and method for manufacturing sameOHTA HIROSHI·Filed 2010·Granted Dec 17, 2013·1 cites·11 claims
- 1657US8030706B2Power semiconductor deviceTOSHIBA KK·Filed 2009·Granted Oct 4, 2011·1 cites·19 claims
- 1747US2008315297A1Semiconductor deviceTOSHIBA KK·Filed 2008·Application pending·0 cites
- 1845US2007267664A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Application pending·0 cites
- 1938US8680606B2Power semiconductor deviceOHTA HIROSHI·Filed 2012·Granted Mar 25, 2014·0 cites·5 claims
- 2038US2013069158A1Power semiconductor deviceOHTA HIROSHI·Filed 2012·Application pending·0 cites
- 2136US7622757B2Semiconductor device having multiple wiring layersTOSHIBA KK·Filed 2006·Granted Nov 24, 2009·0 cites·19 claims
- 2236US2011233656A1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2011·Application pending·0 cites
- 2333US2016043199A1Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2015·Application pending·0 cites
- 2432US8872261B2Semiconductor device and manufacturing method of the sameIRIFUNE HIROYUKI·Filed 2012·Granted Oct 28, 2014·0 cites·21 claims
- 2529US2011291181A1Semiconductor device and method for manufacturing sameIRIFUNE HIROYUKI·Filed 2011·Application pending·0 cites
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