Inventor · disambiguated record
Denny Tang
Also filed as: TANG DENNY · TANG DENNY D · TANG DENNY DUAN-IEE · TANG DENNY DUAN-LEE
83 granted patents·8 pending applications·1,960 citations·filing 1979–2010
99Inventor score
Top patents by PatentIndex Score
91 records- 0198US7229883B2Phase change memory device and method of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 12, 2007·88 cites·24 claims
- 0296US7573736B2Spin torque transfer MRAM deviceTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 11, 2009·47 cites·21 claims
- 0396US5343422ANonvolatile magnetoresistive storage device using spin valve effectIBM·Filed 1993·Granted Aug 30, 1994·154 cites·15 claims
- 0495US7286429B1High speed sensing amplifier for an MRAM cellTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 23, 2007·45 cites·20 claims
- 0595US7221584B2MRAM cell having shared configurationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 22, 2007·27 cites·26 claims
- 0695US7170775B2MRAM cell with reduced write currentTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 30, 2007·41 cites·14 claims
- 0795US7154798B2MRAM arrays and methods for writing and reading magnetic memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 26, 2006·38 cites·20 claims
- 0895US5452165AClose packed magnetic head linear arrayIBM·Filed 1994·Granted Sep 19, 1995·78 cites·23 claims
- 0994US7349243B23-parameter switching technique for use in MRAM memory arraysTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Mar 25, 2008·37 cites·20 claims
- 1093US7579612B2Resistive memory device having enhanced resist ratio and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 25, 2009·34 cites·14 claims
- 1193US7545662B2Method and system for magnetic shielding in semiconductor integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 9, 2009·31 cites·20 claims
- 1293US7436698B2MRAM arrays and methods for writing and reading magnetic memory devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 14, 2008·41 cites·25 claims
- 1393US5936466ADifferential operational transconductance amplifierIBM·Filed 1997·Granted Aug 10, 1999·93 cites·16 claims
- 1491US6804879B2Method of fabricating a magnetic transducer with a write head having a multi-layer coilHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Oct 19, 2004·32 cites·8 claims
- 1590US7471539B2High current interconnect structure for IC memory device programmingTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Dec 30, 2008·17 cites·20 claims
- 1690US7079355B2Magnetic transducer with a write head having a multi-layer coilHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Jul 18, 2006·24 cites·15 claims
- 1789US7183617B2Magnetic shielding for magnetically sensitive semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 27, 2007·19 cites·18 claims
- 1889US6985383B2Reference generator for multilevel nonlinear resistivity memory storage elementsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 10, 2006·48 cites·32 claims
- 1988US7577020B2System and method for reading multiple magnetic tunnel junctions with a single select transistorCHUNG SHINE·Filed 2007·Granted Aug 18, 2009·20 cites·24 claims
- 2088US6744651B2Local thermal enhancement of magnetic memory cell during programmingTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 1, 2004·44 cites·38 claims
- 2188US6606263B1Non-disturbing programming scheme for magnetic RAMTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 12, 2003·48 cites·30 claims
- 2288US4473598AMethod of filling trenches with silicon and structuresIBM·Filed 1982·Granted Sep 25, 1984·74 cites·26 claims
- 2387US7166881B2Multi-sensing level MRAM structuresTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 23, 2007·41 cites·18 claims
- 2486US8022382B2Phase change memory devices with reduced programming currentTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Sep 20, 2011·19 cites·19 claims
- 2584US8213220B2Device and method of programming a magnetic memory elementWANG YU-JEN·Filed 2010·Granted Jul 3, 2012·8 cites·20 claims
- 2683US7705424B2Phase change memoryTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Apr 27, 2010·13 cites·20 claims
- 2783US5117271ALow capacitance bipolar junction transistor and fabrication process therforIBM·Filed 1990·Granted May 26, 1992·56 cites·20 claims
- 2882US6525717B1Input device that analyzes acoustical signaturesIBM·Filed 1999·Granted Feb 25, 2003·97 cites·10 claims
- 2981US8120947B2Spin torque transfer MRAM deviceWANG YU-JEN·Filed 2009·Granted Feb 21, 2012·10 cites·19 claims
- 3081US6711053B1Scaleable high performance magnetic random access memory cell and arrayTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 23, 2004·28 cites·26 claims
- 3181US5106767AProcess for fabricating low capacitance bipolar junction transistorIBM·Filed 1991·Granted Apr 21, 1992·56 cites·19 claims
- 3280US6885577B2Magnetic RAM cell device and array architectureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 26, 2005·26 cites·37 claims
- 3379US4338622ASelf-aligned semiconductor circuits and process thereforIBM·Filed 1979·Granted Jul 6, 1982·24 cites·24 claims
- 3478US7667247B2Method for passivating gate dielectric filmsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 23, 2010·7 cites·20 claims
- 3578US7265373B2Phase change memory device and method of manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 4, 2007·9 cites·25 claims
- 3678US6245607B1Buried channel quasi-unipolar transistorIND TECH RES INST·Filed 1998·Granted Jun 12, 2001·43 cites·14 claims
- 3778US5298786ASOI lateral bipolar transistor with edge-strapped base contact and method of fabricating sameIBM·Filed 1993·Granted Mar 29, 1994·43 cites·10 claims
- 3877US7719882B2Advanced MRAM designTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 18, 2010·10 cites·9 claims
- 3977US7439957B2Compact universal keyboardIBM·Filed 2001·Granted Oct 21, 2008·22 cites·5 claims
- 4076US7443638B2Magnetoresistive structures and fabrication methodsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Oct 28, 2008·5 cites·13 claims
- 4175US7688616B2Device and method of programming a magnetic memory elementTAIWAN SEMICONDCUTOR MFG COMPA·Filed 2007·Granted Mar 30, 2010·10 cites·20 claims
- 4275US7050290B2Integrated capacitorTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 23, 2006·21 cites·21 claims
- 4375US5877718ADifferential analog-to-digital converter with low power consumptionIBM·Filed 1997·Granted Mar 2, 1999·40 cites·17 claims
- 4474US7759764B2Elevated bipolar transistor structureTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jul 20, 2010·6 cites·19 claims
- 4572US7989920B2Phase change memoryTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Aug 2, 2011·4 cites·20 claims
- 4671US6909628B2High density magnetic RAM and array architecture using a one transistor, one diode, and one MTJ cellTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 21, 2005·17 cites·39 claims
- 4770US6778433B1High programming efficiency MRAM cell structureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 17, 2004·16 cites·34 claims
- 4869US6901653B2Process for manufacturing a magnetic head coil structureHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Jun 7, 2005·5 cites·18 claims
- 4969US5089724AHigh-speed low-power ECL/NTL circuits with AC-coupled complementary push-pull output stageIBM·Filed 1990·Granted Feb 18, 1992·22 cites·12 claims
- 5068US4446476AIntegrated circuit having a sublayer electrical contact and fabrication thereofIBM·Filed 1981·Granted May 1, 1984·29 cites·8 claims
Showing the top 50 of 91 patent records by PatentIndex Score.
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