Inventor · disambiguated record
Joseph A. Smart
Also filed as: SMART JOSEPH · SMART JOSEPH A
17 granted patents·1 pending application·676 citations·filing 2000–2019
96Inventor score
Files withRF MICRO DEVICES INC6CRYSTAL IS INC5SCHOWALTER LEO J3CORNELL RES FOUNDATION INC2GRANDUSKY JAMES R2
Top patents by PatentIndex Score
18 records- 0197US8080833B2Thick pseudomorphic nitride epitaxial layersGRANDUSKY JAMES R·Filed 2010·Granted Dec 20, 2011·61 cites·20 claims
- 0297US7250360B2Single step, high temperature nucleation process for a lattice mismatched substrateCORNELL RES FOUNDATION INC·Filed 2005·Granted Jul 31, 2007·104 cites·24 claims
- 0395US8896020B2Method and apparatus for producing large, single-crystals of aluminum nitrideCRYSTAL IS INC·Filed 2013·Granted Nov 25, 2014·14 cites·16 claims
- 0495US8222650B2Nitride semiconductor heterostructures and related methodsSCHOWALTER LEO J·Filed 2009·Granted Jul 17, 2012·36 cites·27 claims
- 0595US7638346B2Nitride semiconductor heterostructures and related methodsCRYSTAL IS INC·Filed 2006·Granted Dec 29, 2009·42 cites·25 claims
- 0695US7408182B1Surface passivation of GaN devices in epitaxial growth chamberRF MICRO DEVICES INC·Filed 2006·Granted Aug 5, 2008·36 cites·14 claims
- 0795US7033961B1Epitaxy/substrate release layerRF MICRO DEVICES INC·Filed 2003·Granted Apr 25, 2006·116 cites·25 claims
- 0894US9437430B2Thick pseudomorphic nitride epitaxial layersSCHOWALTER LEO J·Filed 2008·Granted Sep 6, 2016·34 cites·28 claims
- 0994US8545629B2Method and apparatus for producing large, single-crystals of aluminum nitrideSCHOWALTER LEO J·Filed 2006·Granted Oct 1, 2013·22 cites·13 claims
- 1093US7968391B1High voltage GaN-based transistor structureRF MICRO DEVICES INC·Filed 2007·Granted Jun 28, 2011·25 cites·11 claims
- 1193US7459356B1High voltage GaN-based transistor structureRF MICRO DEVICES INC·Filed 2006·Granted Dec 2, 2008·25 cites·11 claims
- 1293US7052942B1Surface passivation of GaN devices in epitaxial growth chamberRF MICRO DEVICES INC·Filed 2003·Granted May 30, 2006·66 cites·17 claims
- 1390US7026665B1High voltage GaN-based transistor structureRF MICRO DEVICES INC·Filed 2003·Granted Apr 11, 2006·48 cites·19 claims
- 1488US6478871B1Single step process for epitaxial lateral overgrowth of nitride based materialsCORNELL RES FOUNDATION INC·Filed 2000·Granted Nov 12, 2002·43 cites·20 claims
- 1579US9447521B2Method and apparatus for producing large, single-crystals of aluminum nitrideCRYSTAL IS INC·Filed 2014·Granted Sep 20, 2016·2 cites·20 claims
- 1674US9970127B2Method and apparatus for producing large, single-crystals of aluminum nitrideCRYSTAL IS INC·Filed 2016·Granted May 15, 2018·1 cites·21 claims
- 1766US10446391B2Thick pseudomorphic nitride epitaxial layersGRANDUSKY JAMES R·Filed 2011·Granted Oct 15, 2019·1 cites·20 claims
- 1860US2020058491A1Thick pseudomorphic nitride epitaxial layersCRYSTAL IS INC·Filed 2019·Application pending·0 cites
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