Inventor · disambiguated record
Shigenobu Maeda
Also filed as: MAEDA SHIGENOBU
210 granted patents·41 pending applications·3,449 citations·filing 1993–2025
99Inventor score
Files withMITSUBISHI ELECTRIC CORP92SAMSUNG ELECTRONICS CO LTD72RENESAS TECH CORP60MAEDA SHIGENOBU16CHANG CHANSAM1
Top patents by PatentIndex Score
251 records- 0198US5627390ASemiconductor device with columnsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 6, 1997·200 cites·8 claims
- 0297US8836046B2Semiconductor devices including protruding insulation portions between active finsMAEDA SHIGENOBU·Filed 2013·Granted Sep 16, 2014·19 cites·20 claims
- 0397US5994735ASemiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 30, 1999·178 cites·6 claims
- 0496US6870226B2Semiconductor device and method of manufacturing sameRENESAS TECH CORP·Filed 2003·Granted Mar 22, 2005·99 cites·8 claims
- 0596US6359804B2Static semiconductor memory cell formed in an n-well and p-wellMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 19, 2002·126 cites·5 claims
- 0695US9276116B2Semiconductor device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 1, 2016·21 cites·8 claims
- 0795US7291542B2Semiconductor wafer and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Nov 6, 2007·23 cites·4 claims
- 0895US6551866B1Method of manufacturing a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Apr 22, 2003·179 cites·14 claims
- 0995US6452249B1Inductor with patterned ground shieldMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 17, 2002·89 cites·19 claims
- 1095US6420751B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 16, 2002·73 cites·4 claims
- 1194US6882006B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2002·Granted Apr 19, 2005·60 cites·2 claims
- 1294US5780888ASemiconductor device with storage nodeMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 14, 1998·94 cites·11 claims
- 1393US9431537B2Semiconductor devices and methods of fabricating the sameMAEDA SHIGENOBU·Filed 2015·Granted Aug 30, 2016·8 cites·20 claims
- 1493US9240481B2Semiconductor device having embedded strain-inducing patternMAEDA SHIGENOBU·Filed 2015·Granted Jan 19, 2016·8 cites·2 claims
- 1593US7541644B2Semiconductor device with effective heat-radiationRENESAS TECH CORP·Filed 2004·Granted Jun 2, 2009·71 cites·10 claims
- 1693US6611041B2Inductor with patterned ground shieldMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Aug 26, 2003·59 cites·10 claims
- 1793US6314021B1Nonvolatile semiconductor memory device and semiconductor integrated circuitMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 6, 2001·62 cites·15 claims
- 1892US8884298B2Semiconductor device having embedded strain-inducing pattern and method of forming the sameMAEDA SHIGENOBU·Filed 2013·Granted Nov 11, 2014·11 cites·30 claims
- 1992US6150688ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 21, 2000·75 cites·17 claims
- 2092US6127209ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 3, 2000·73 cites·9 claims
- 2191US6512258B2Semiconductor device and method of manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 28, 2003·50 cites·9 claims
- 2291US6303425B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 16, 2001·45 cites·15 claims
- 2391US6255146B1Thin film transistor and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 3, 2001·39 cites·3 claims
- 2490US9842909B2Semiconductor device and fabricating method thereofMAEDA SHIGENOBU·Filed 2016·Granted Dec 12, 2017·6 cites·7 claims
- 2590US9728601B2Semiconductor devices including active fins and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 8, 2017·7 cites·18 claims
- 2690US6144072ASemiconductor device formed on insulating layer and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 7, 2000·68 cites·13 claims
- 2789US6741495B2Magnetic memory device and magnetic substrateMITSUBISHI ELECTRIC CORP·Filed 2003·Granted May 25, 2004·41 cites·2 claims
- 2889US6383860B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 7, 2002·36 cites·15 claims
- 2989US6173235B1Method of estimating lifetime of floating SOI-MOSFETMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jan 9, 2001·86 cites·2 claims
- 3088US12336242B2Semiconductor devices including protruding insulation portions between active finsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 3188US9576959B1Semiconductor device having first and second gate electrodes and method of manufacturing the sameDONG YAOQI·Filed 2016·Granted Feb 21, 2017·11 cites·19 claims
- 3288US8816440B2Low noise and high performance LSI deviceMAEDA SHIGENOBU·Filed 2011·Granted Aug 26, 2014·6 cites·25 claims
- 3388US8809990B2Semiconductor device and method of manufacturing the sameMAEDA SHIGENOBU·Filed 2012·Granted Aug 19, 2014·9 cites·15 claims
- 3487US6875663B2Semiconductor device having a trench isolation and method of fabricating the sameRENESAS TECH CORP·Filed 2002·Granted Apr 5, 2005·29 cites·32 claims
- 3587US6492690B2Semiconductor device having control electrodes with different impurity concentrationsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 10, 2002·61 cites·10 claims
- 3686US9966376B2Semiconductor devices and inverter having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 8, 2018·6 cites·16 claims
- 3786US9941360B2Field effect transistor and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 10, 2018·4 cites·11 claims
- 3886US8962435B2Method of forming semiconductor device having embedded strain-inducing patternMAEDA SHIGENOBU·Filed 2014·Granted Feb 24, 2015·5 cites·4 claims
- 3985US6509583B1Semiconductor device formed on insulating layer and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 21, 2003·20 cites·3 claims
- 4085US6358815B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Mar 19, 2002·28 cites·9 claims
- 4185US5514880AField effect thin-film transistor for an SRAM with reduced standby currentMITSUBISHI ELECTRIC CORP·Filed 1993·Granted May 7, 1996·56 cites·15 claims
- 4284US7545002B2Low noise and high performance LSI device, layout and manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 9, 2009·14 cites·12 claims
- 4384US6621425B2Semiconductor device, terminal device and communication methodMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 16, 2003·32 cites·20 claims
- 4483US9466724B2Semiconductor devices having source/drain and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 11, 2016·5 cites·12 claims
- 4583US6794717B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Sep 21, 2004·23 cites·11 claims
- 4683US6429079B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 6, 2002·29 cites·7 claims
- 4782US10840244B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 17, 2020·3 cites·20 claims
- 4882US10749000B2Field effect transistor with channel layer, and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 18, 2020·2 cites·9 claims
- 4982US10418448B2Semiconductor devices including field effect transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 17, 2019·2 cites·14 claims
- 5082US9368445B2E-fuse structure of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 14, 2016·3 cites·19 claims
Showing the top 50 of 251 patent records by PatentIndex Score.
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