Inventor · disambiguated record
Wenchi Ting
Also filed as: TING WENCHI
10 granted patents·3 pending applications·316 citations·filing 1995–2001
91Inventor score
Files withUNITED SEMICONDUCTOR CORP4TAIWAN SEMICONDUCTOR MFG2CYPRESS SEMICONDUCTOR CORP1TAIWAN SEMICONDUCTOR MANFACTUR1UNITED MICROELECTRONICS CROP1
Top patents by PatentIndex Score
13 records- 0193US6436787B1Method of forming crown-type MIM capacitor integrated with the CU damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 20, 2002·75 cites·29 claims
- 0289US5751631AFlash memory cell and a new method for sensing the content of the new memory cellFiled 1996·Granted May 12, 1998·71 cites·10 claims
- 0386US5814854AHighly scalable FLASH EEPROM cellFiled 1996·Granted Sep 29, 1998·68 cites·15 claims
- 0464US5844271ASingle layer polycrystalline silicon split-gate EEPROM cell having a buried control gateCYPRESS SEMICONDUCTOR CORP·Filed 1995·Granted Dec 1, 1998·25 cites·12 claims
- 0563US6091636AFlash memory cell and a new method for sensing the content of the new memory cellFiled 1998·Granted Jul 18, 2000·19 cites·1 claims
- 0657US6232183B1Method for fabricating a flash memoryUNITED MICROELECTRONICS CROP·Filed 1999·Granted May 15, 2001·17 cites·13 claims
- 0756US5882972AMethod of fabricating a buried bit lineUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Mar 16, 1999·17 cites·12 claims
- 0852US6008522AStructure of buried bit lineUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Dec 28, 1999·14 cites·6 claims
- 0940US5852313AFlash memory cell structure having a high gate-coupling coefficient and a select gateUNITED SEMICONDUCTOR CORP·Filed 1997·Granted Dec 22, 1998·5 cites·8 claims
- 1037US6046938AStructure of a flash memoryUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Apr 4, 2000·5 cites·7 claims
- 1135US2003096473A1Method for making metal capacitors with low leakage currents for mixed-signal devicesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Application pending·0 cites
- 1235US2003077882A1Method of forming strained-silicon wafer for mobility-enhanced MOSFET deviceTAIWAN SEMICONDUCTOR MANFACTUR·Filed 2001·Application pending·0 cites
- 1329US2001023107A1Method for fabricating a hybrid isolation structureFiled 1999·Application pending·0 cites
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