Inventor · disambiguated record
Jeff Ramer
Also filed as: RAMER JEFF · RAMER JEFF C
7 granted patents·5 pending applications·18 citations·filing 2009–2019
81Inventor score
Top patents by PatentIndex Score
12 records- 0189US8084775B2Light sources with serially connected LED segments including current blocking diodesHASNAIN GHULAM·Filed 2010·Granted Dec 27, 2011·6 cites·8 claims
- 0286US10174439B2Nucleation of aluminum nitride on a silicon substrate using an ammonia preflowTOSHIBA ELECTRONIC DEVICES & STORAGE CORP·Filed 2017·Granted Jan 8, 2019·5 cites·21 claims
- 0377US8684749B2LED with improved injection efficiencyTOSHIBA TECHNO CT INC·Filed 2013·Granted Apr 1, 2014·3 cites·8 claims
- 0465US9012953B2LED with improved injection efficiencyTOSHIBA TECHNO CT INC·Filed 2014·Granted Apr 21, 2015·1 cites·10 claims
- 0564US8525221B2LED with improved injection efficiencyLESTER STEVEN·Filed 2009·Granted Sep 3, 2013·2 cites·3 claims
- 0663US8853668B2Light emitting regions for use with light emitting devicesRAMER JEFF·Filed 2011·Granted Oct 7, 2014·1 cites·28 claims
- 0758US2015056731A1Light emitting regions for use with light emitting devicesTOSHIBA KK·Filed 2014·Application pending·0 cites
- 0854US9617656B2Nucleation of aluminum nitride on a silicon substrate using an ammonia preflowMANUTIUS IP INC·Filed 2014·Granted Apr 11, 2017·0 cites·17 claims
- 0953US2012058584A1Multi-Junction LEDHASNAIN GHULAM·Filed 2011·Application pending·0 cites
- 1046US2014225059A1LED with Improved Injection EfficiencyBRIDGELUX INC·Filed 2013·Application pending·0 cites
- 1146US2013026480A1Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia PreflowBRIDGELUX INC·Filed 2011·Application pending·0 cites
- 1230US2020035482A1Buffer layer for Gallium Nitride-on-Silicon epitaxyRAMER JEFF C·Filed 2019·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →