Inventor · disambiguated record
Hans Peter Felsl
Also filed as: FELSL HANS PETER
20 granted patents·87 citations·filing 2007–2019
93Inventor score
Files withINFINEON TECHNOLOGIES AG10INFINEON TECHNOLOGIES AUSTRIA3FELSL HANS-PETER2PFIRSCH FRANK2MAUDER ANTON1
Top patents by PatentIndex Score
20 records- 0192US7842590B2Method for manufacturing a semiconductor substrate including laser annealingINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Nov 30, 2010·23 cites·21 claims
- 0289US9035355B2Multi-channel HEMTOSTERMAIER CLEMENS·Filed 2012·Granted May 19, 2015·10 cites·20 claims
- 0388US8853774B2Semiconductor device including trenches and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2012·Granted Oct 7, 2014·14 cites·25 claims
- 0484US9166027B2IGBT with reduced feedback capacitanceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Oct 20, 2015·6 cites·27 claims
- 0583US8264033B2Semiconductor device having a floating semiconductor zonePFIRSCH FRANK·Filed 2009·Granted Sep 11, 2012·8 cites·15 claims
- 0682US7812427B2Soft switching semiconductor component with high robustness and low switching lossesINFINEON TECHNOLOGIES AG·Filed 2007·Granted Oct 12, 2010·8 cites·22 claims
- 0782US7687891B2Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity typeINFINEON TECHNOLOGIES AG·Filed 2007·Granted Mar 30, 2010·8 cites·30 claims
- 0879US8829562B2Semiconductor device including a dielectric structure in a trenchSCHULZE HANS-JOACHIM·Filed 2012·Granted Sep 9, 2014·5 cites·26 claims
- 0968US7915675B2IGBT having one or more stacked zones formed within a second layer of the IGBTINFINEON TECHNOLOGIES AG·Filed 2010·Granted Mar 29, 2011·2 cites·20 claims
- 1067US9349829B2Method of manufacturing a multi-channel HEMTINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted May 24, 2016·1 cites·8 claims
- 1163US8482062B2Semiconductor device having a floating semiconductor zonePFIRSCH FRANK·Filed 2012·Granted Jul 9, 2013·1 cites·12 claims
- 1258US9048095B2Method for manufacturing a semiconductor device having a channel region in a trenchINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jun 2, 2015·0 cites·9 claims
- 1354US9412854B2IGBT module and a circuitFELSL HANS-PETER·Filed 2010·Granted Aug 9, 2016·1 cites·14 claims
- 1454US8872264B2Semiconductor device having a floating semiconductor zoneINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Oct 28, 2014·0 cites·13 claims
- 1552US8860025B2Semiconductor device and method for manufacturing the semiconductor deviceMAUDER ANTON·Filed 2011·Granted Oct 14, 2014·0 cites·17 claims
- 1648US11018252B2Power semiconductor transistorINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 25, 2021·0 cites·27 claims
- 1748US9741795B2IGBT having at least one first type transistor cell and reduced feedback capacitanceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 22, 2017·0 cites·22 claims
- 1845US9385181B2Semiconductor diode and method of manufacturing a semiconductor diodeINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 5, 2016·0 cites·12 claims
- 1940US9293524B2Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field ringsINFINEON TECHNOLOGIES AG·Filed 2014·Granted Mar 22, 2016·0 cites·24 claims
- 2034US9105682B2Semiconductor component with improved dynamic behaviorFELSL HANS-PETER·Filed 2011·Granted Aug 11, 2015·0 cites·25 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →