Inventor · disambiguated record
Hiang C. Chan
Also filed as: CHAN HIANG · CHAN HIANG C
28 granted patents·1,687 citations·filing 1990–1999
98Inventor score
Files withMICRON TECHNOLOGY INC28
Top patents by PatentIndex Score
28 records- 0196US5053351AMethod of making stacked E-cell capacitor DRAM cellMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 1, 1991·150 cites·18 claims
- 0295US5122476ADouble DRAM cellMICRON TECHNOLOGY INC·Filed 1991·Granted Jun 16, 1992·106 cites·6 claims
- 0395US5061650AMethod for formation of a stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 29, 1991·142 cites·22 claims
- 0494US5236860ALateral extension stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Aug 17, 1993·107 cites·31 claims
- 0593US5358894AOxidation enhancement in narrow masked field regions of a semiconductor waferMICRON TECHNOLOGY INC·Filed 1993·Granted Oct 25, 1994·114 cites·9 claims
- 0693US5087586AProcess for creating fully-recessed field isolation regions by oxidizing a selectively-grown epitaxial silicon layerMICRON TECHNOLOGY INC·Filed 1991·Granted Feb 11, 1992·162 cites·9 claims
- 0792US5170233AMethod for increasing capacitive surface area of a conductive material in semiconductor processing and stacked memory cell capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Dec 8, 1992·94 cites·29 claims
- 0891US5082797AMethod of making stacked textured container capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 21, 1992·99 cites·15 claims
- 0989US5057888ADouble DRAM cellMICRON TECHNOLOGY INC·Filed 1991·Granted Oct 15, 1991·56 cites·16 claims
- 1089US5049517AMethod for formation of a stacked capacitorMICRON TECHNOLOGY INC·Filed 1990·Granted Sep 17, 1991·85 cites·27 claims
- 1188US5126280AStacked multi-poly spacers with double cell plate capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Jun 30, 1992·75 cites·15 claims
- 1287US5084405AProcess to fabricate a double ring stacked cell structureMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 28, 1992·79 cites·27 claims
- 1384US5137842AStacked H-cell capacitor and process to fabricate sameMICRON TECHNOLOGY INC·Filed 1991·Granted Aug 11, 1992·60 cites·20 claims
- 1482US5262343ADRAM stacked capacitor fabrication processMICRON TECHNOLOGY INC·Filed 1992·Granted Nov 16, 1993·54 cites·19 claims
- 1579US5281549AProcess for fabricating a stacked capacitor having an I-shaped cross-section in a dynamic random access memory arrayMICRON TECHNOLOGY INC·Filed 1992·Granted Jan 25, 1994·41 cites·18 claims
- 1679US5081559AEnclosed ferroelectric stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 14, 1992·43 cites·25 claims
- 1777US5084406AMethod for forming low resistance DRAM digit-lineMICRON TECHNOLOGY INC·Filed 1991·Granted Jan 28, 1992·56 cites·24 claims
- 1876US5798296AMethod of fabricating a gate having a barrier of titanium silicideMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 25, 1998·29 cites·15 claims
- 1969US5108943AMushroom double stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Apr 28, 1992·28 cites·11 claims
- 2063US5313087ASemiconductor device for minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to anotherMICRON TECHNOLOGY INC·Filed 1993·Granted May 17, 1994·29 cites·9 claims
- 2158US5234855AStacked comb spacer capacitorMICRON TECHNOLOGY INC·Filed 1990·Granted Aug 10, 1993·19 cites·20 claims
- 2252US5089986AMushroom double stacked capacitorMICRON TECHNOLOGY INC·Filed 1991·Granted Feb 18, 1992·15 cites·3 claims
- 2349US6087700AGate having a barrier of titanium silicideMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 11, 2000·8 cites·21 claims
- 2449US5273924AMethod for forming an SRAM by minimizing diffusion of conductivity enhancing impurities from one region of a polysilicon layer to another regionMICRON TECHNOLOGY INC·Filed 1993·Granted Dec 28, 1993·16 cites·5 claims
- 2543US5236856AMethod for minimizing diffusion of conductivity enhancing impurities from one region of polysilicon layer to another region and a semiconductor device produced according to the methodMICRON TECHNOLOGY INC·Filed 1991·Granted Aug 17, 1993·13 cites·21 claims
- 2637US6107176AMethod of fabricating a gate having a barrier of titanium silicideMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 22, 2000·3 cites·22 claims
- 2733US6197662B1Semiconductor processing method of forming field isolation oxide using a polybuffered mask which includes a base nitride layer on the substrate, and other semiconductor processing methodsMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 6, 2001·2 cites·27 claims
- 2833US5966621ASemiconductor processing method of forming field isolation oxide relative to a semiconductor substrateMICRON TECHNOLOGY INC·Filed 1996·Granted Oct 12, 1999·2 cites·26 claims
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