Inventor · disambiguated record
Yoosang Hwang
Also filed as: HWANG YOOSANG
105 granted patents·14 pending applications·490 citations·filing 1996–2025
99Inventor score
Top patents by PatentIndex Score
119 records- 0198US11195836B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 7, 2021·8 cites·20 claims
- 0297US11723191B2Semiconductor memory devices having protruding contact portionsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 8, 2023·8 cites·20 claims
- 0397US11665883B2Semiconductor memory device having spacer capping pattern disposed between burried dielectic pattern and an air gap and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 30, 2023·10 cites·20 claims
- 0497US10784272B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 22, 2020·25 cites·20 claims
- 0597US10535659B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 14, 2020·25 cites·20 claims
- 0696US10468414B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 5, 2019·17 cites·20 claims
- 0796US10468350B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 5, 2019·12 cites·20 claims
- 0895US11410951B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 9, 2022·6 cites·20 claims
- 0995US11404538B2Semiconductor memory device and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 2, 2022·5 cites·19 claims
- 1095US10861854B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 8, 2020·9 cites·20 claims
- 1195US10615164B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 7, 2020·8 cites·20 claims
- 1295US10490444B2Semiconductor devices having an air gapSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 26, 2019·12 cites·17 claims
- 1394US11322499B2Semiconductor device including storage node electrode including step and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 3, 2022·3 cites·16 claims
- 1493US11282787B2Semiconductor devices having improved electrical characteristics and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 22, 2022·3 cites·18 claims
- 1593US10373960B2Semiconductor memory devices including separate upper and lower bit line spacersSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 6, 2019·8 cites·21 claims
- 1692US11764107B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 19, 2023·2 cites·9 claims
- 1792US11502084B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 15, 2022·4 cites·19 claims
- 1892US10978397B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 13, 2021·5 cites·16 claims
- 1992US9847278B2Semiconductor devices having air spacers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 19, 2017·12 cites·17 claims
- 2092US9520348B2Semiconductor devices and methods of manufacturing the sameCHOI BYOUNGDEOG·Filed 2013·Granted Dec 13, 2016·22 cites·10 claims
- 2192US9209241B2Semiconductor devices including a recessed active region, and methods of forming semiconductor devices including a recessed active regionKIM BONGSOO·Filed 2013·Granted Dec 8, 2015·22 cites·20 claims
- 2291US11785763B2Semiconductor devices having contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 10, 2023·2 cites·20 claims
- 2391US11616065B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 28, 2023·2 cites·14 claims
- 2491US11355509B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 7, 2022·2 cites·20 claims
- 2591US10461153B2Semiconductor memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 29, 2019·11 cites·16 claims
- 2691US9871093B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 16, 2018·8 cites·20 claims
- 2790US11844212B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 12, 2023·1 cites·20 claims
- 2890US10410916B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 10, 2019·7 cites·20 claims
- 2990US10269808B2Semiconductor devices and methods of forming semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·19 claims
- 3090US9508649B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 29, 2016·7 cites·20 claims
- 3190US8524560B2Method of fabricating semiconductor device with vertical channel transistorKIM DAEIK·Filed 2012·Granted Sep 3, 2013·11 cites·10 claims
- 3289US10037996B2Semiconductor device includes a substrate having conductive contact structures thereonSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 31, 2018·4 cites·20 claims
- 3389US9960170B1Methods of fabricating memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 1, 2018·6 cites·20 claims
- 3489US9761591B2Method of forming semiconductor device including edge chip and related deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 12, 2017·5 cites·20 claims
- 3589US5790366AHigh temperature electrode-barriers for ferroelectric and other capacitor structuresSHARP KK·Filed 1996·Granted Aug 4, 1998·77 cites·14 claims
- 3688US10910378B2Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·5 cites·20 claims
- 3788US10211091B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 19, 2019·6 cites·20 claims
- 3888US9935111B2Method of forming semiconductor device including edge chip and related deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 3, 2018·4 cites·9 claims
- 3988US9929013B2Methods of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 27, 2018·5 cites·20 claims
- 4088US9184136B2Semiconductor devices and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 10, 2015·11 cites·15 claims
- 4187US10559571B2Methods of fabricating semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 11, 2020·4 cites·20 claims
- 4286US10121793B2Semiconductor device having supporters and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 6, 2018·6 cites·20 claims
- 4386US9831172B2Semiconductor devices having expanded recess for bit line contactSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Nov 28, 2017·5 cites·17 claims
- 4485US11133315B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 28, 2021·3 cites·20 claims
- 4585US11037930B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 15, 2021·4 cites·20 claims
- 4685US10535605B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 14, 2020·3 cites·18 claims
- 4785US8859363B2Semiconductor devices including vertical channel transistors and methods of fabricating the sameKIM DAEIK·Filed 2011·Granted Oct 14, 2014·7 cites·18 claims
- 4883US12069849B2Semiconductor devices and methods of forming semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·19 claims
- 4983US10796950B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 6, 2020·3 cites·19 claims
- 5083US10395706B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 27, 2019·5 cites·19 claims
Showing the top 50 of 119 patent records by PatentIndex Score.
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