Inventor · disambiguated record
Ryan T. Hirose
Also filed as: HIROSE RYAN · HIROSE RYAN T · HIROSE RYAN TASUO
38 granted patents·1,815 citations·filing 1989–2017
98Inventor score
Files withCYPRESS SEMICONDUCTOR CORP21NVX CORP8HIROSE RYAN T5CELIS SEMICONDUCTOR CORP1GEORGESCU BOGDAN I1
Top patents by PatentIndex Score
38 records- 0199US6163048ASemiconductor non-volatile memory device having a NAND cell structureCYPRESS SEMICONDUCTOR CORP·Filed 1996·Granted Dec 19, 2000·424 cites·11 claims
- 0298US6614070B1Semiconductor non-volatile memory device having a NAND cell structureCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Sep 2, 2003·178 cites·13 claims
- 0398US5789776ASingle poly memory cell and arrayNVX CORP·Filed 1996·Granted Aug 4, 1998·274 cites·33 claims
- 0495US7545694B2Sense amplifier with leakage testing and read debug capabilityCYPRESS SEMICONDUCTOR CORP·Filed 2007·Granted Jun 9, 2009·92 cites·14 claims
- 0595US6363011B1Semiconductor non-volatile latch device including non-volatile elementsCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Mar 26, 2002·102 cites·29 claims
- 0693US7969804B1Memory architecture having a reference current generator that provides two reference currentsCYPRESS SEMICONDUCTOR CORP·Filed 2008·Granted Jun 28, 2011·25 cites·18 claims
- 0792US8675405B1Method to reduce program disturbs in non-volatile memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Mar 18, 2014·11 cites·15 claims
- 0890US6122191ASemiconductor non-volatile device including embedded non-volatile elementsCYPRESS SEMICONDUCTOR CORP·Filed 1998·Granted Sep 19, 2000·72 cites·22 claims
- 0989US9431124B2Method to reduce program disturbs in non-volatile memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Aug 30, 2016·7 cites·20 claims
- 1088US8542541B2Memory architecture having two independently controlled voltage pumpsHIROSE RYAN T·Filed 2012·Granted Sep 24, 2013·9 cites·17 claims
- 1188US5892712ASemiconductor non-volatile latch device including embedded non-volatile elementsNVX CORP·Filed 1997·Granted Apr 6, 1999·78 cites·19 claims
- 1288US5774400AStructure and method to prevent over erasure of nonvolatile memory transistorsNVX CORP·Filed 1996·Granted Jun 30, 1998·73 cites·33 claims
- 1388US5644533AFlash memory system, and methods of constructing and utilizing sameNVX CORP·Filed 1993·Granted Jul 1, 1997·101 cites·45 claims
- 1487US8125835B2Memory architecture having two independently controlled voltage pumpsHIROSE RYAN T·Filed 2008·Granted Feb 28, 2012·13 cites·15 claims
- 1586US8570809B2Flash memory devices and systemsHIROSE RYAN T·Filed 2011·Granted Oct 29, 2013·8 cites·20 claims
- 1686US7821866B1Low impedance column multiplexer circuit and methodCYPRESS SEMICONDUCTOR CORP·Filed 2007·Granted Oct 26, 2010·16 cites·20 claims
- 1786US5506816AMemory cell array having compact word line arrangementNVX CORP·Filed 1994·Granted Apr 9, 1996·60 cites·42 claims
- 1885US8988938B2Method to reduce program disturbs in non-volatile memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Mar 24, 2015·6 cites·20 claims
- 1985US5760644AIntegrated circuit timer function using natural decay of charge stored in a dielectricNVX CORP·Filed 1996·Granted Jun 2, 1998·61 cites·22 claims
- 2077US5656837AFlash memory system, and methods of constructing and utilizing sameNVX CORP·Filed 1996·Granted Aug 12, 1997·47 cites·15 claims
- 2177US5013943ASingle ended sense amplifier with improved data recall for variable bit line currentSIMTEK CORP·Filed 1989·Granted May 7, 1991·34 cites·14 claims
- 2276US8750051B1Systems and methods for providing high voltage to memory devicesHIROSE RYAN T·Filed 2011·Granted Jun 10, 2014·5 cites·20 claims
- 2376US7586333B1High speed, low supply voltage tolerant bootstrapped word line driver with high voltage isolationCYPRESS SEMICONDUCTOR CORP·Filed 2007·Granted Sep 8, 2009·9 cites·20 claims
- 2475US6272029B1Dynamic regulation scheme for high speed charge pumpsUNITED MICROELECTRONICS CORP·Filed 2000·Granted Aug 7, 2001·23 cites·18 claims
- 2573US9847137B2Method to reduce program disturbs in non-volatile memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2016·Granted Dec 19, 2017·2 cites·20 claims
- 2672US10032517B2Memory architecture having two independently controlled voltage pumpsCYPRESS SEMICONDUCTOR CORP·Filed 2015·Granted Jul 24, 2018·2 cites·14 claims
- 2768US10262747B2Method to reduce program disturbs in non-volatile memory cellsCYPRESS SEMICONDUCTOR CORP·Filed 2017·Granted Apr 16, 2019·2 cites·20 claims
- 2867US7471135B2Multiplexer circuitCYPRESS SEMICONDUCTOR CORP·Filed 2006·Granted Dec 30, 2008·6 cites·18 claims
- 2967US5510638AField shield isolated EPROMNVX CORP·Filed 1994·Granted Apr 23, 1996·32 cites·22 claims
- 3066US6590420B1Level shifting circuit and methodCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted Jul 8, 2003·12 cites·26 claims
- 3159US6178138B1Asynchronously addressable clocked memory device and method of operating sameCELIS SEMICONDUCTOR CORP·Filed 1999·Granted Jan 23, 2001·18 cites·34 claims
- 3253US8908438B1Flash memory devices and systemsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Dec 9, 2014·0 cites·20 claims
- 3352US7012456B1Circuit and method for discharging high voltage signalsCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted Mar 14, 2006·6 cites·19 claims
- 3450US6654309B1Circuit and method for reducing voltage stress in a memory decoderCYPRESS SEMICONDUCTOR CORP·Filed 2001·Granted Nov 25, 2003·6 cites·12 claims
- 3548US9899089B1Memory architecture having two independently controlled voltage pumpsCYPRESS SEMICONDUCTOR CORP·Filed 2013·Granted Feb 20, 2018·0 cites·17 claims
- 3647US8599618B2High voltage tolerant row driverGEORGESCU BOGDAN I·Filed 2011·Granted Dec 3, 2013·1 cites·20 claims
- 3746US9129686B2Systems and methods for providing high voltage to memory devicesCYPRESS SEMICONDUCTOR CORP·Filed 2014·Granted Sep 8, 2015·0 cites·20 claims
- 3831US9007843B2Internal data compare for memory verificationHIROSE RYAN T·Filed 2011·Granted Apr 14, 2015·0 cites·17 claims
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