Inventor · disambiguated record
Halting Wang
Also filed as: WANG HALTING
11 granted patents·4 citations·filing 2018–2020
80Inventor score
Top patents by PatentIndex Score
11 records- 0180US11133417B1Transistors with a sectioned epitaxial semiconductor layerGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 28, 2021·1 cites·20 claims
- 0273US11670339B2Video acquisition method and device, terminal and mediumBEIJING MICROLIVE VISION TECH CO LTD·Filed 2018·Granted Jun 6, 2023·2 cites·17 claims
- 0372US11171237B2Middle of line gate structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Nov 9, 2021·1 cites·19 claims
- 0461US11569437B2Memory device comprising a top via electrode and methods of making such a memory deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Jan 31, 2023·0 cites·15 claims
- 0561US11127834B2Gate structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
- 0654US11721728B2Self-aligned contactGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 8, 2023·0 cites·19 claims
- 0754US11462632B2Lateral bipolar junction transistor device and method of making such a deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 4, 2022·0 cites·16 claims
- 0854US11329158B2Three part source/drain region structure for transistorGLOBALFOUNDRIES US INC·Filed 2020·Granted May 10, 2022·0 cites·19 claims
- 0951US11075298B2LDMOS integrated circuit productGLOBALFOUNDRIES US INC·Filed 2019·Granted Jul 27, 2021·0 cites·20 claims
- 1049US11171036B2Preventing dielectric void over trench isolation regionGLOBALFOUNDRIES US INC·Filed 2019·Granted Nov 9, 2021·0 cites·15 claims
- 1148US11289474B2Passive devices over polycrystalline semiconductor finsGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 29, 2022·0 cites·20 claims
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