Inventor · disambiguated record
Huai-Yu Cheng
Also filed as: CHENG HUAI-YU
24 granted patents·10 pending applications·166 citations·filing 2002–2024
95Inventor score
Top patents by PatentIndex Score
34 records- 0196US9917252B2GaSbGe phase change memory materialsMACRONIX INT CO LTD·Filed 2015·Granted Mar 13, 2018·6 cites·20 claims
- 0295US10374009B1Te-free AsSeGe chalcogenides for selector devices and memory devices using sameMACRONIX INT CO LTD·Filed 2018·Granted Aug 6, 2019·22 cites·12 claims
- 0395US8946666B2Ge-Rich GST-212 phase change memory materialsCHENG HUAI-YU·Filed 2011·Granted Feb 3, 2015·16 cites·12 claims
- 0493US8916414B2Method for making memory cell by melting phase change material in confined spaceMACRONIX INT CO LTD·Filed 2013·Granted Dec 23, 2014·10 cites·11 claims
- 0592US8363463B2Phase change memory having one or more non-constant doping profilesMACRONIX INT CO LTD·Filed 2010·Granted Jan 29, 2013·16 cites·10 claims
- 0692US8178387B2Methods for reducing recrystallization time for a phase change materialCHENG HUAI-YU·Filed 2010·Granted May 15, 2012·17 cites·9 claims
- 0790US8932901B2Stressed phase change materialsCHENG HUAI-YU·Filed 2012·Granted Jan 13, 2015·8 cites·14 claims
- 0890US8426242B2Composite target sputtering for forming doped phase change materialsCHENG HUAI-YU·Filed 2011·Granted Apr 23, 2013·11 cites·20 claims
- 0989US10541271B2Superlattice-like switching devicesMACRONIX INT CO LTD·Filed 2017·Granted Jan 21, 2020·10 cites·16 claims
- 1089US8772747B2Composite target sputtering for forming doped phase change materialsMACRONIX INT CO LTD·Filed 2013·Granted Jul 8, 2014·8 cites·10 claims
- 1187US9214229B2Phase change memory material and system for embedded memory applicationsMACRONIX INT CO LTD·Filed 2014·Granted Dec 15, 2015·10 cites·20 claims
- 1285US9257643B2Phase change memory cell with improved phase change materialIBM·Filed 2013·Granted Feb 9, 2016·4 cites·15 claims
- 1383US10050196B1Dielectric doped, Sb-rich GST phase change memoryMACRONIX INT CO LTD·Filed 2017·Granted Aug 14, 2018·6 cites·11 claims
- 1482US10978511B1Semiconductor device and memory cellMACRONIX INT CO LTD·Filed 2019·Granted Apr 13, 2021·3 cites·16 claims
- 1577US9882126B2Phase change storage device with multiple serially connected storage regionsIBM·Filed 2016·Granted Jan 30, 2018·4 cites·13 claims
- 1676US11158787B2C—As—Se—Ge ovonic materials for selector devices and memory devices using sameMACRONIX INT CO LTD·Filed 2019·Granted Oct 26, 2021·3 cites·18 claims
- 1775US6797090B2Production method of multi-layer information record carriersIND TECH RES INST·Filed 2002·Granted Sep 28, 2004·11 cites·12 claims
- 1869US9653683B2Phase change memory cell with improved phase change materialIBM·Filed 2015·Granted May 16, 2017·1 cites·11 claims
- 1965US2025248052A1Memory deviceMACRONIX INT CO LTD·Filed 2024·Application pending·0 cites
- 2063US11289540B2Semiconductor device and memory cellMACRONIX INT CO LTD·Filed 2021·Granted Mar 29, 2022·0 cites·14 claims
- 2162US12310031B2Multi-layer ovonic threshold switch (OTS) for switching devices and memory devices using the sameMACRONIX INT CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 2262US11889771B2Mitigating moisture driven degradation of silicon doped chalcogenidesIBM·Filed 2020·Granted Jan 30, 2024·0 cites·20 claims
- 2360US11355552B2Memory material, and memory device applying the sameMACRONIX INT CO LTD·Filed 2020·Granted Jun 7, 2022·0 cites·13 claims
- 2456US11362276B2High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM applicationMACRONIX INT CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·21 claims
- 2556US2025151636A1Managing phase change materials for memory devicesMACRONIX INT CO LTD·Filed 2023·Application pending·0 cites
- 2655US11271155B2Suppressing oxidation of silicon germanium selenium arsenide materialIBM·Filed 2020·Granted Mar 8, 2022·0 cites·12 claims
- 2752US2023337559A1SiC-Doped Ge1Sb2Te4 Phase-Change Materials for 3D Crosspoint MemoryMACRONIX INT CO LTD·Filed 2022·Application pending·0 cites
- 2850US2011049456A1Phase change structure with composite doping for phase change memoryMACRONIX INT CO LTD·Filed 2009·Application pending·0 cites
- 2949US2009246964A1Etching process for phase-change filmsMACRONIX INT CO LTD·Filed 2008·Application pending·0 cites
- 3044US2020295083A1Barrier layer for selector devices and memory devices using sameMACRONIX INT CO LTD·Filed 2019·Application pending·0 cites
- 3142US2009250816A1Ultra-thin diffusion-barrier layer for cu metallizationCHIN TSUNG SHUNE·Filed 2008·Application pending·0 cites
- 3239US2022123209A1SELECTOR DEVICES INCLUDING S-DOPED AsSeGeSi CHALCOGENIDESMACRONIX INT CO LTD·Filed 2020·Application pending·0 cites
- 3339US2018331284A1Threshold voltage control of memory cell selector for phase change and resistive random access memory arraysIBM·Filed 2017·Application pending·0 cites
- 3437US2017263863A1Phase change memory having a composite memory elementMACRONIX INT CO LTD·Filed 2016·Application pending·0 cites
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