Inventor · disambiguated record
Seung H. Kang
Also filed as: KANG SEUNG · KANG SEUNG H · KANG SEUNG HYUK
235 granted patents·45 pending applications·2,802 citations·filing 2007–2023
99Inventor score
Top patents by PatentIndex Score
280 records- 0199US9548445B2Amorphous alloy space for perpendicular MTJsQUALCOMM INC·Filed 2015·Granted Jan 17, 2017·80 cites·12 claims
- 0299US9379314B2Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)QUALCOMM INC·Filed 2013·Granted Jun 28, 2016·65 cites·10 claims
- 0399US9142762B1Magnetic tunnel junction and method for fabricating a magnetic tunnel junctionQUALCOMM INC·Filed 2014·Granted Sep 22, 2015·45 cites·10 claims
- 0499US8866242B2MTJ structure and integration schemeLI XIA·Filed 2011·Granted Oct 21, 2014·39 cites·12 claims
- 0598US10483457B1Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and arrayQUALCOMM INC·Filed 2018·Granted Nov 19, 2019·43 cites·8 claims
- 0698US10311930B1One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operationsQUALCOMM INC·Filed 2018·Granted Jun 4, 2019·29 cites·30 claims
- 0798US10043967B2Self-compensation of stray field of perpendicular magnetic elementsQUALCOMM INC·Filed 2014·Granted Aug 7, 2018·36 cites·12 claims
- 0898US9935258B2Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching deviceQUALCOMM INC·Filed 2016·Granted Apr 3, 2018·36 cites·18 claims
- 0998US9875784B1Three-dimensional (3D) ferroelectric dipole metal-oxide semiconductor ferroelectric field-effect transistor (MOSFeFET) system, and related methods and systemsQUALCOMM INC·Filed 2017·Granted Jan 23, 2018·59 cites·30 claims
- 1098US9634237B2Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devicesQUALCOMM INC·Filed 2014·Granted Apr 25, 2017·46 cites·5 claims
- 1198US9373782B2MTJ structure and integration schemeQUALCOMM INC·Filed 2014·Granted Jun 21, 2016·21 cites·16 claims
- 1298US9343659B1Embedded magnetoresistive random access memory (MRAM) integration with top contactsQUALCOMM INC·Filed 2015·Granted May 17, 2016·49 cites·11 claims
- 1398US9245608B2Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching deviceCHEN WEI-CHUAN·Filed 2012·Granted Jan 26, 2016·82 cites·16 claims
- 1498US7728622B2Software programmable logic using spin transfer torque magnetoresistive random access memoryQUALCOMM INC·Filed 2008·Granted Jun 1, 2010·47 cites·20 claims
- 1597US10636962B2Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing dataQUALCOMM INC·Filed 2018·Granted Apr 28, 2020·9 cites·29 claims
- 1697US10060880B2Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensingQUALCOMM INC·Filed 2016·Granted Aug 28, 2018·13 cites·23 claims
- 1797US9824735B1System and method to generate a random numberQUALCOMM INC·Filed 2016·Granted Nov 21, 2017·34 cites·24 claims
- 1897US9704919B1High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cellsQUALCOMM INC·Filed 2016·Granted Jul 11, 2017·30 cites·20 claims
- 1997US9589619B2Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropyQUALCOMM INC·Filed 2015·Granted Mar 7, 2017·22 cites·21 claims
- 2097US9406875B2MRAM integration techniques for technology scalingQUALCOMM INC·Filed 2013·Granted Aug 2, 2016·20 cites·13 claims
- 2197US8981502B2Fabricating a magnetic tunnel junction storage elementCHEN WEI-CHUAN·Filed 2010·Granted Mar 17, 2015·23 cites·14 claims
- 2297US8865481B2MRAM device and integration techniques compatible with logic integrationQUALCOMM INC·Filed 2014·Granted Oct 21, 2014·17 cites·20 claims
- 2397US8704320B2Strain induced reduction of switching current in spin-transfer torque switching devicesZHU XIAOCHUN·Filed 2012·Granted Apr 22, 2014·37 cites·14 claims
- 2497US8144509B2Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell sizeJUNG SEONG-OOK·Filed 2008·Granted Mar 27, 2012·62 cites·29 claims
- 2596US10381060B2High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell arrayQUALCOMM INC·Filed 2016·Granted Aug 13, 2019·25 cites·18 claims
- 2696US10224087B1Sensing voltage based on a supply voltage applied to magneto-resistive random access memory (MRAM) bit cells in an MRAM for tracking write operations to the MRAM bit cellsQUALCOMM TECHNOLOGIES INC·Filed 2017·Granted Mar 5, 2019·23 cites·37 claims
- 2796US10210920B1Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applicationsQUALCOMM INC·Filed 2018·Granted Feb 19, 2019·25 cites·31 claims
- 2896US9852783B1Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltagesQUALCOMM TECHNOLOGIES INC·Filed 2016·Granted Dec 26, 2017·31 cites·30 claims
- 2996US9614143B2De-integrated trench formation for advanced MRAM integrationQUALCOMM INC·Filed 2015·Granted Apr 4, 2017·17 cites·10 claims
- 3096US9378781B1System, apparatus, and method for sense amplifiersQUALCOMM INC·Filed 2015·Granted Jun 28, 2016·25 cites·26 claims
- 3196US8482966B2Magnetic element utilizing protective sidewall passivationKANG SEUNG H·Filed 2008·Granted Jul 9, 2013·40 cites·23 claims
- 3296US8362580B2Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layerQUALCOMM INC·Filed 2009·Granted Jan 29, 2013·45 cites·52 claims
- 3396US7885105B2Magnetic tunnel junction cell including multiple vertical magnetic domainsQUALCOMM INC·Filed 2008·Granted Feb 8, 2011·68 cites·24 claims
- 3495US11710733B2Vertical power grid standard cell architectureQUALCOMM INC·Filed 2020·Granted Jul 25, 2023·4 cites·12 claims
- 3595US11404374B2Circuits employing a back side-front side connection structure for coupling back side routing to front side routing, and related complementary metal oxide semiconductor (CMOS) circuits and methodsQUALCOMM INC·Filed 2020·Granted Aug 2, 2022·3 cites·17 claims
- 3695US10424380B1Physically unclonable function (PUF) memory employing static random access memory (SRAM) bit cells with added passive resistance to enhance transistor imbalance for improved PUF output reproducibilityQUALCOMM INC·Filed 2018·Granted Sep 24, 2019·15 cites·31 claims
- 3795US9728259B1Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense marginQUALCOMM TECHNOLOGIES INC·Filed 2016·Granted Aug 8, 2017·21 cites·30 claims
- 3895US9406689B2Logic finFET high-K/conductive gate embedded multiple time programmable flash memoryQUALCOMM INC·Filed 2013·Granted Aug 2, 2016·21 cites·7 claims
- 3995US9245610B2OTP cell with reversed MTJ connectionKIM JUNG PILL·Filed 2012·Granted Jan 26, 2016·18 cites·10 claims
- 4095US9136463B2Method of forming a magnetic tunnel junction structureLI XIA·Filed 2007·Granted Sep 15, 2015·37 cites·21 claims
- 4195US8674465B2MRAM device and integration techniques compatible with logic integrationLI XIA·Filed 2010·Granted Mar 18, 2014·22 cites·19 claims
- 4295US8625337B2Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elementsWU WENQING·Filed 2011·Granted Jan 7, 2014·24 cites·6 claims
- 4395US8455965B2Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctionsLI XIA·Filed 2009·Granted Jun 4, 2013·28 cites·14 claims
- 4495US8432727B2Invalid write prevention for STT-MRAM arrayRYU KYUNGHO·Filed 2010·Granted Apr 30, 2013·70 cites·11 claims
- 4595US8107280B2Word line voltage control in STT-MRAMYOON SEI SEUNG·Filed 2008·Granted Jan 31, 2012·51 cites·21 claims
- 4695US8004881B2Magnetic tunnel junction device with separate read and write pathsQUALCOMM INC·Filed 2007·Granted Aug 23, 2011·37 cites·10 claims
- 4794US9590010B1Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layerQUALCOMM INC·Filed 2016·Granted Mar 7, 2017·18 cites·29 claims
- 4894US9496314B1Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced areaQUALCOMM INC·Filed 2015·Granted Nov 15, 2016·12 cites·30 claims
- 4994US8580583B2Magnetic tunnel junction device and fabricationLEE KANGHO·Filed 2012·Granted Nov 12, 2013·12 cites·17 claims
- 5094US8027206B2Bit line voltage control in spin transfer torque magnetoresistive random access memoryQUALCOMM INC·Filed 2009·Granted Sep 27, 2011·33 cites·19 claims
Showing the top 50 of 280 patent records by PatentIndex Score.
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