Inventor · disambiguated record
Chun-Lung Ni
Also filed as: NI CHUN-LUNG
6 granted patents·1 pending application·11 citations·filing 2014–2025
74Inventor score
Technology areasH10P
Files withTAIWAN SEMICONDUCTOR MFG CO LTD7
Top patents by PatentIndex Score
7 records- 0191US9508719B2Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 29, 2016·9 cites·20 claims
- 0274US2025359294A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0373US9515072B2FinFET structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 6, 2016·2 cites·20 claims
- 0466US10923353B2Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·0 cites·20 claims
- 0565US12446292B2Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 0657US10510539B2Fin field effect transistor (FinFET) device with controlled end-to-end critical dimension and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·0 cites·23 claims
- 0752US9859404B2FinFET structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 2, 2018·0 cites·20 claims
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