Inventor · disambiguated record
Stephen M. Gates
Also filed as: GATES STEPHEN · GATES STEPHEN M · GATES STEPHEN MCCONNELL
130 granted patents·31 pending applications·7,825 citations·filing 1988–2022
99Inventor score
Top patents by PatentIndex Score
161 records- 0199US9305836B1Air gap semiconductor structure with selective cap bilayerIBM·Filed 2014·Granted Apr 5, 2016·488 cites·10 claims
- 0299US7049247B2Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device madeIBM·Filed 2004·Granted May 23, 2006·558 cites·28 claims
- 0399US7045453B2Very low effective dielectric constant interconnect structures and methods for fabricating the sameIBM·Filed 2005·Granted May 16, 2006·221 cites·9 claims
- 0499US6479110B2Multiphase low dielectric constant material and method of depositionIBM·Filed 2001·Granted Nov 12, 2002·175 cites·27 claims
- 0599US6312793B1Multiphase low dielectric constant materialIBM·Filed 1999·Granted Nov 6, 2001·320 cites·14 claims
- 0699US6203613B1Atomic layer deposition with nitrate containing precursorsIBM·Filed 1999·Granted Mar 20, 2001·1.6k cites·53 claims
- 0798US9349687B1Advanced manganese/manganese nitride cap/etch mask for air gap formation scheme in nanocopper low-K interconnectIBM·Filed 2015·Granted May 24, 2016·96 cites·20 claims
- 0898US8525169B1Reliable physical unclonable function for device authenticationEDELSTEIN DANIEL C·Filed 2012·Granted Sep 3, 2013·115 cites·23 claims
- 0998US7282458B2Low K and ultra low K SiCOH dielectric films and methods to form the sameIBM·Filed 2005·Granted Oct 16, 2007·97 cites·11 claims
- 1098US7088003B2Structures and methods for integration of ultralow-k dielectrics with improved reliabilityIBM·Filed 2004·Granted Aug 8, 2006·563 cites·10 claims
- 1198US6437443B1Multiphase low dielectric constant material and method of depositionIBM·Filed 2001·Granted Aug 20, 2002·152 cites·10 claims
- 1298US6162532AMagnetic storage medium formed of nanoparticlesIBM·Filed 1998·Granted Dec 19, 2000·190 cites·20 claims
- 1397US6391658B1Formation of arrays of microelectronic elementsIBM·Filed 1999·Granted May 21, 2002·257 cites·10 claims
- 1496US7479306B2SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the sameIBM·Filed 2005·Granted Jan 20, 2009·26 cites·1 claims
- 1596US7030468B2Low k and ultra low k SiCOH dielectric films and methods to form the sameIBM·Filed 2004·Granted Apr 18, 2006·71 cites·45 claims
- 1696US7023093B2Very low effective dielectric constant interconnect Structures and methods for fabricating the sameIBM·Filed 2002·Granted Apr 4, 2006·112 cites·22 claims
- 1796US6911400B2Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for sameIBM·Filed 2002·Granted Jun 28, 2005·79 cites·49 claims
- 1896US6620659B2Merged logic and memory combining thin film and bulk Si transistorsIBM·Filed 2001·Granted Sep 16, 2003·349 cites·7 claims
- 1995US5796121AThin film transistors fabricated on plastic substratesIBM·Filed 1997·Granted Aug 18, 1998·161 cites·38 claims
- 2095US5634224AInflatable cushioning device with self opening intake valveFiled 1994·Granted Jun 3, 1997·122 cites·27 claims
- 2194US8759976B2Structure with sub-lithographic random conductors as a physical unclonable functionEDELSTEIN DANIEL C·Filed 2012·Granted Jun 24, 2014·18 cites·19 claims
- 2294US7288292B2Ultra low k (ULK) SiCOH film and methodIBM·Filed 2003·Granted Oct 30, 2007·49 cites·20 claims
- 2394US6271542B1Merged logic and memory combining thin film and bulk Si transistorsIBM·Filed 1997·Granted Aug 7, 2001·119 cites·11 claims
- 2493US8440999B2Semiconductor chip with graphene based devices in an interconnect structure of the chipDIMITRAKOPOULOS CHRISTOS D·Filed 2011·Granted May 14, 2013·14 cites·18 claims
- 2593US7491658B2Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionalityIBM·Filed 2004·Granted Feb 17, 2009·63 cites·16 claims
- 2693US7253105B2Reliable BEOL integration process with direct CMP of porous SiCOH dielectricIBM·Filed 2005·Granted Aug 7, 2007·26 cites·20 claims
- 2793US6617690B1Interconnect structures containing stress adjustment cap layerIBM·Filed 2002·Granted Sep 9, 2003·79 cites·22 claims
- 2893US6242770B1Diode connected to a magnetic tunnel junction and self aligned with a metallic conductor and method for forming the sameFiled 1998·Granted Jun 5, 2001·79 cites·24 claims
- 2992US9786550B2Low resistance metal contacts to interconnectsIBM·Filed 2015·Granted Oct 10, 2017·8 cites·11 claims
- 3092US7312524B2Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device madeIBM·Filed 2006·Granted Dec 25, 2007·23 cites·30 claims
- 3192US6641899B1Nonlithographic method to produce masks by selective reaction, articles produced, and composition for sameIBM·Filed 2002·Granted Nov 4, 2003·43 cites·11 claims
- 3291US9711455B2Method of forming an air gap semiconductor structure with selective cap bilayerIBM·Filed 2015·Granted Jul 18, 2017·5 cites·12 claims
- 3391US6603204B2Low-k interconnect structure comprised of a multilayer of spin-on porous dielectricsIBM·Filed 2001·Granted Aug 5, 2003·54 cites·29 claims
- 3490US9984940B1Selective and conformal passivation layer for 3D high-mobility channel devicesIBM·Filed 2017·Granted May 29, 2018·6 cites·18 claims
- 3590US6677680B2Hybrid low-k interconnect structure comprised of 2 spin-on dielectric materialsIBM·Filed 2001·Granted Jan 13, 2004·54 cites·25 claims
- 3690US5667586AMethod for forming a single crystal semiconductor on a substrateIBM·Filed 1996·Granted Sep 16, 1997·78 cites·11 claims
- 3790US5593249ADiverless flowline connection systemSONSUB INC·Filed 1995·Granted Jan 14, 1997·76 cites·16 claims
- 3889US8624323B2BEOL structures incorporating active devices and mechanical strengthGATES STEPHEN M·Filed 2011·Granted Jan 7, 2014·7 cites·24 claims
- 3989US8101236B2Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bondingEDELSTEIN DANIEL C·Filed 2009·Granted Jan 24, 2012·8 cites·24 claims
- 4089US6737727B2Electronic structures with reduced capacitanceIBM·Filed 2002·Granted May 18, 2004·44 cites·55 claims
- 4189US6180444B1Semiconductor device having ultra-sharp P-N junction and method of manufacturing the sameIBM·Filed 1998·Granted Jan 30, 2001·69 cites·12 claims
- 4289US5830538AMethod to form a polycrystalline film on a substrateIBM·Filed 1996·Granted Nov 3, 1998·67 cites·31 claims
- 4388US9960117B2Air gap semiconductor structure with selective cap bilayerIBM·Filed 2015·Granted May 1, 2018·4 cites·18 claims
- 4488US7892648B2SiCOH dielectric material with improved toughness and improved Si-C bondingIBM·Filed 2005·Granted Feb 22, 2011·8 cites·13 claims
- 4588US7521377B2SiCOH film preparation using precursors with built-in porogen functionalityIBM·Filed 2006·Granted Apr 21, 2009·11 cites·1 claims
- 4688US7371461B2Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectricsIBM·Filed 2005·Granted May 13, 2008·13 cites·20 claims
- 4788US7357977B2Ultralow dielectric constant layer with controlled biaxial stressIBM·Filed 2005·Granted Apr 15, 2008·10 cites·7 claims
- 4888US6917108B2Reliable low-k interconnect structure with hybrid dielectricIBM·Filed 2002·Granted Jul 12, 2005·49 cites·32 claims
- 4988US6737747B2Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereofIBM·Filed 2002·Granted May 18, 2004·43 cites·13 claims
- 5087US9472710B1Low-loss large-grain optical waveguide for interconnecting components integrated on a glass substrateIBM·Filed 2015·Granted Oct 18, 2016·5 cites·7 claims
Showing the top 50 of 161 patent records by PatentIndex Score.
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