Inventor · disambiguated record
Jaehoon Jang
Also filed as: JANG JAEHOON
61 granted patents·8 pending applications·1,250 citations·filing 2009–2024
99Inventor score
Top patents by PatentIndex Score
69 records- 0199US8394716B2Methods of manufacturing three-dimensional semiconductor devices and related devicesHWANG SUNG-MIN·Filed 2010·Granted Mar 12, 2013·165 cites·13 claims
- 0299US8278170B2Methods of forming nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings thereinLEE CHANGHYUN·Filed 2011·Granted Oct 2, 2012·117 cites·19 claims
- 0397US9136005B2Erasing methods of three-dimensional nonvolatile memory devices with cell strings and dummy word linesCHOE BYEONG-IN·Filed 2013·Granted Sep 15, 2015·43 cites·17 claims
- 0497US8559224B2Nonvolatile memory device, operating method thereof, and memory system including the sameHAN JINMAN·Filed 2011·Granted Oct 15, 2013·36 cites·39 claims
- 0597US8427878B2Non-volatile memory devices, operating methods thereof and memory systems including the sameSHIM SUNIL·Filed 2011·Granted Apr 23, 2013·33 cites·19 claims
- 0697US8395190B2Three-dimensional semiconductor memory deviceSHIM SUNIL·Filed 2010·Granted Mar 12, 2013·40 cites·20 claims
- 0797US8319275B2Integrated circuit memory devices having selection transistors with nonuniform threshold voltage characteristicsSHIM SUNIL·Filed 2010·Granted Nov 27, 2012·28 cites·13 claims
- 0897US8013389B2Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·73 cites·20 claims
- 0996US9117923B2Three-dimensional semiconductor memory device and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 25, 2015·30 cites·13 claims
- 1096US8614917B2Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistorsSHIM SUNIL·Filed 2011·Granted Dec 24, 2013·21 cites·11 claims
- 1196US8488381B2Non-volatile memory device having vertical structure and method of operating the sameKIM DOOGON·Filed 2010·Granted Jul 16, 2013·39 cites·14 claims
- 1296US8409977B2Three-dimensional semiconductor memory device and a method of fabricating the sameSHIM SUNIL·Filed 2010·Granted Apr 2, 2013·61 cites·27 claims
- 1395US8654584B2Three-dimensional non-volatile memory devices having highly integrated string selection and sense amplifier circuits thereinKIM KINAM·Filed 2011·Granted Feb 18, 2014·184 cites·8 claims
- 1495US8203211B2Nonvolatile memory devices having a three dimensional structureJEONG JAEHUN·Filed 2010·Granted Jun 19, 2012·22 cites·9 claims
- 1594US12370992B2Electro-mechanical brake system and controlling method thereofHL MANDO CORP·Filed 2023·Granted Jul 29, 2025·1 cites·20 claims
- 1694US9111617B2Three-dimensional semiconductor memory deviceSHIM SUNIL·Filed 2012·Granted Aug 18, 2015·20 cites·8 claims
- 1794US8901745B2Three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 2, 2014·16 cites·17 claims
- 1894US8576629B2Operating method of nonvolatile memory deviceCHOE BYEONG-IN·Filed 2011·Granted Nov 5, 2013·21 cites·20 claims
- 1993US9330770B2Non-volatile memory devices, operating methods thereof and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 3, 2016·9 cites·20 claims
- 2093US9331095B2Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 3, 2016·11 cites·19 claims
- 2193US8873294B2Nonvolatile memory devices, erasing methods thereof and memory systems including the sameSHIM SUNIL·Filed 2011·Granted Oct 28, 2014·18 cites·23 claims
- 2293US8519472B2Semiconductor device and method of forming the sameJEONG JAEHUN·Filed 2010·Granted Aug 27, 2013·22 cites·20 claims
- 2392US9000508B2Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings thereinSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 7, 2015·14 cites·22 claims
- 2492US8916926B2Nonvolatile memory device and method of making the sameCHOE BYEONG-IN·Filed 2011·Granted Dec 23, 2014·17 cites·16 claims
- 2592US8592912B2Semiconductor device and method of fabricating the sameHWANG SUNG-MIN·Filed 2011·Granted Nov 26, 2013·15 cites·11 claims
- 2691US12088751B2Hinge assembly and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 10, 2024·4 cites·20 claims
- 2791US8824209B2Non-volatile memory device having vertical structure and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 2, 2014·11 cites·18 claims
- 2891US8426301B2Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devicesOH JIN-YONG·Filed 2011·Granted Apr 23, 2013·19 cites·24 claims
- 2989US9177613B2Semiconductor deviceLEE WOOKHYOUNG·Filed 2013·Granted Nov 3, 2015·13 cites·20 claims
- 3089US9111799B2Semiconductor device with a pick-up regionHWANG SUNG-MIN·Filed 2011·Granted Aug 18, 2015·11 cites·20 claims
- 3189US8637920B2Semiconductor memory devices having selection transistors with nonuniform threshold voltage characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jan 28, 2014·8 cites·10 claims
- 3289US8546869B2Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings thereinLEE CHANGHYUN·Filed 2012·Granted Oct 1, 2013·8 cites·3 claims
- 3388US9917094B2Semiconductor device having staggered pillarsLEE WOOKHYOUNG·Filed 2015·Granted Mar 13, 2018·7 cites·7 claims
- 3487US9412450B2Three-dimensional nonvolatile memory and operating method of three-dimensional nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 9, 2016·11 cites·19 claims
- 3587US8969162B2Three-dimensional semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 3, 2015·7 cites·11 claims
- 3687US8896123B2Nonvolatile memory devices having a three dimensional structureJEONG JAEHUN·Filed 2012·Granted Nov 25, 2014·7 cites·9 claims
- 3787US8743614B2Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 3, 2014·7 cites·17 claims
- 3887US8742466B2Three-dimensional semiconductor device including a mold structure providing gap regions and an interconnection structure including a plurality of interconnection patterns formed in the gap regionsSHIM JAE-JOO·Filed 2010·Granted Jun 3, 2014·8 cites·19 claims
- 3987US8482138B2Three-dimensional semiconductor memory deviceHWANG SUNG-MIN·Filed 2011·Granted Jul 9, 2013·8 cites·13 claims
- 4086US8603906B2Method of forming a three-dimensional semiconductor memory device comprising sub-cells, terraced structures and strapping regionsSHIM SUNIL·Filed 2013·Granted Dec 10, 2013·6 cites·12 claims
- 4185US8923060B2Nonvolatile memory devices and operating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Dec 30, 2014·9 cites·20 claims
- 4284US8488402B2Nonvolatile memory device and method of reading the same using different precharge voltagesSHIM SUNIL·Filed 2011·Granted Jul 16, 2013·7 cites·20 claims
- 4384US8115259B2Three-dimensional memory deviceSHIM SUNIL·Filed 2010·Granted Feb 14, 2012·7 cites·10 claims
- 4483US12158187B2Electromechanical brake system and control method thereofHL MANDO CORP·Filed 2022·Granted Dec 3, 2024·1 cites·10 claims
- 4583US11495615B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 8, 2022·3 cites·20 claims
- 4680US12139115B2Electromechanical brake system and control method thereofHL MANDO CORP·Filed 2021·Granted Nov 12, 2024·1 cites·10 claims
- 4779US11444094B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 13, 2022·2 cites·20 claims
- 4879US10396088B2Three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 27, 2019·3 cites·20 claims
- 4979US9548123B2Operating methods of nonvolatile memory devices including a ground select transistor and first and second dummy memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 17, 2017·4 cites·20 claims
- 5077US8461639B2Nonvolatile memory deviceJEONG JAEHUN·Filed 2010·Granted Jun 11, 2013·5 cites·20 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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