Inventor · disambiguated record
Lee-Wee Teo
Also filed as: TEO LEE W · TEO LEE WEE
74 granted patents·12 pending applications·378 citations·filing 2003–2025
99Inventor score
Files withCHARTERED SEMICONDUCTOR MFG17TAIWAN SEMICONDUCTOR MFG CO LTD14TAIWAN SEMICONDUCTOR MFG10TEO LEE WEE10GLOBALFOUNDRIES SG PTE LTD9
Top patents by PatentIndex Score
86 records- 0198US7592270B2Modulation of stress in stress film through ion implantation and its application in stress memorization techniqueCHARTERED SEMICONDUCTOR MFG·Filed 2007·Granted Sep 22, 2009·58 cites·32 claims
- 0297US8557659B2Spacer structures of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Oct 15, 2013·23 cites·20 claims
- 0396US8183644B1Metal gate structure of a CMOS semiconductor deviceCHUANG HARRY HAK-LAY·Filed 2011·Granted May 22, 2012·27 cites·20 claims
- 0493US8304840B2Spacer structures of a semiconductor deviceTEO LEE-WEE·Filed 2010·Granted Nov 6, 2012·12 cites·20 claims
- 0592US8890260B2Polysilicon design for replacement gate technologyCHUANG HARRY HAK-LAY·Filed 2009·Granted Nov 18, 2014·14 cites·21 claims
- 0691US8349678B2Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 8, 2013·13 cites·20 claims
- 0791US8304831B2Method and apparatus of forming a gateZHU MING·Filed 2010·Granted Nov 6, 2012·15 cites·20 claims
- 0890US8450216B2Contact etch stop layers of a field effect transistorTEO LEE-WEE·Filed 2010·Granted May 28, 2013·8 cites·20 claims
- 0989US8614484B2High voltage device with partial silicon germanium epi source/drainTEO LEE-WEE·Filed 2009·Granted Dec 24, 2013·16 cites·20 claims
- 1089US8324031B2Diffusion barrier and method of formation thereofTAN SHYUE SENG·Filed 2008·Granted Dec 4, 2012·10 cites·7 claims
- 1189US8211761B2Semiconductor system using germanium condensationTAN SHYUE SENG·Filed 2006·Granted Jul 3, 2012·17 cites·13 claims
- 1289US2025311354A1Polysilicon Design for Replacement Gate TechnologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1388US9412841B2Method of fabricating a transistor using contact etch stop layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·4 cites·20 claims
- 1488US8835294B2Method for improving thermal stability of metal gateCHEW HAN-GUAN·Filed 2010·Granted Sep 16, 2014·10 cites·20 claims
- 1586US8389359B2Method for forming low resistance and uniform metal gateTEO LEE-WEE·Filed 2010·Granted Mar 5, 2013·9 cites·20 claims
- 1686US8304842B2Interconnection structure for N/P metal gatesCHEW HAN-GUAN·Filed 2010·Granted Nov 6, 2012·7 cites·20 claims
- 1785US8138053B2Method of forming source and drain of field-effect-transistor and structure thereofUTOMO HENRY K·Filed 2007·Granted Mar 20, 2012·12 cites·20 claims
- 1885US7727856B2Selective STI stress relaxation through ion implantationCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Jun 1, 2010·10 cites·55 claims
- 1984US8647946B2Control gateTAN SHYUE SENG·Filed 2009·Granted Feb 11, 2014·8 cites·23 claims
- 2083USRE45060ESpacer structures of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·4 cites·21 claims
- 2183US8598656B2Method and apparatus of forming ESD protection deviceZHU MING·Filed 2010·Granted Dec 3, 2013·6 cites·18 claims
- 2282US8525270B2Structures and methods to stop contact metal from extruding into replacement gatesTEO LEE-WEE·Filed 2010·Granted Sep 3, 2013·6 cites·20 claims
- 2381US10658492B2Polysilicon design for replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 19, 2020·1 cites·20 claims
- 2481US8981495B2Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 17, 2015·4 cites·20 claims
- 2580US8772147B2Spacer structures of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 8, 2014·3 cites·20 claims
- 2680US8586428B2Interconnection structure for N/P metal gatesCHEW HAN-GUAN·Filed 2012·Granted Nov 19, 2013·4 cites·20 claims
- 2779US10403736B2Polysilicon design for replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 3, 2019·1 cites·20 claims
- 2879US10084061B2Polysilicon design for replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 25, 2018·1 cites·20 claims
- 2978US9929251B2Polysilicon design for replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 27, 2018·1 cites·20 claims
- 3078US8691673B2Semiconductor structure with suppressed STI dishing effect at resistor regionCHUANG HAK-LAY·Filed 2011·Granted Apr 8, 2014·4 cites·18 claims
- 3177US12426333B2Polysilicon design for replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 3276US7846800B2Avoiding plasma charging in integrated circuitsCHARTERED SEMICONDUCTOR MFG·Filed 2008·Granted Dec 7, 2010·6 cites·20 claims
- 3376US7692213B2Integrated circuit system employing a condensation processCHARTERED SEMICONDUCTOR MFG·Filed 2007·Granted Apr 6, 2010·6 cites·18 claims
- 3474US11018241B2Polysilicon design for replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·0 cites·20 claims
- 3572US9679988B2Polysilicon design for replacement gate technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 13, 2017·1 cites·20 claims
- 3672US9105692B2Method of fabricating an interconnection structure in a CMOS comprising a step of forming a dummy electrodeTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 11, 2015·2 cites·21 claims
- 3772US8378428B2Metal gate structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 19, 2013·3 cites·20 claims
- 3872US7998835B2Strain-direct-on-insulator (SDOI) substrate and method of formingGLOBALFOUNDRIES SG PTE LTD·Filed 2008·Granted Aug 16, 2011·4 cites·16 claims
- 3971US8119541B2Modulation of stress in stress film through ion implantation and its application in stress memorization techniqueTEO LEE WEE·Filed 2009·Granted Feb 21, 2012·3 cites·20 claims
- 4071US7888214B2Selective stress relaxation of contact etch stop layer through layout designGLOBALFOUNDRIES SG PTE LTD·Filed 2005·Granted Feb 15, 2011·5 cites·29 claims
- 4170US8008744B2Selective STI stress relaxation through ion implantationGLOBALFOUNDRIES SG PTE LTD·Filed 2010·Granted Aug 30, 2011·2 cites·20 claims
- 4270US7935589B2Enhanced stress for transistorsCHARTERED SEMICONDUCTOR MFG·Filed 2008·Granted May 3, 2011·4 cites·16 claims
- 4369US8716081B2Capacitor top plate over source/drain to form a 1T memory deviceTEO LEE WEE·Filed 2007·Granted May 6, 2014·4 cites·29 claims
- 4469US8274115B2Hybrid orientation substrate with stress layerTEO LEE WEE·Filed 2008·Granted Sep 25, 2012·4 cites·16 claims
- 4568US9159565B2Integrated circuit system with band to band tunneling and method of manufacture thereofTAN SHYUE SENG·Filed 2009·Granted Oct 13, 2015·2 cites·20 claims
- 4667US8969151B2Integrated circuit system employing resistance altering techniquesTAN SHYUE SENG·Filed 2008·Granted Mar 3, 2015·3 cites·20 claims
- 4767US8697517B2Reduced substrate coupling for inductors in semiconductor devicesCHUANG HARRY HAK-LAY·Filed 2010·Granted Apr 15, 2014·2 cites·20 claims
- 4867US8563389B2Integrated circuit having silicon resistor and method of forming the sameCHUANG HARRY-HAK-LAY·Filed 2011·Granted Oct 22, 2013·2 cites·20 claims
- 4966US8053327B2Method of manufacture of an integrated circuit system with self-aligned isolation structuresGLOBALFOUNDRIES SG PTE LTD·Filed 2006·Granted Nov 8, 2011·3 cites·10 claims
- 5065US7994010B2Process for fabricating a semiconductor device having embedded epitaxial regionsCHARTERED SEMICONDUCTOR MFG·Filed 2007·Granted Aug 9, 2011·2 cites·19 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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