Inventor · disambiguated record
Man-Sug Kang
Also filed as: KANG MAN-SUG
14 granted patents·7 pending applications·395 citations·filing 1997–2014
93Inventor score
Top patents by PatentIndex Score
21 records- 0197US6740977B2Insulating layers in semiconductor devices having a multi-layer nanolaminate structure of SiNx thin film and BN thin film and methods for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 25, 2004·210 cites·34 claims
- 0293US9178039B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 3, 2015·18 cites·14 claims
- 0393US6962876B2Method for forming a low-k dielectric layer for a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 8, 2005·77 cites·17 claims
- 0476US8557627B2Methods of forming a phase change layer and methods of fabricating a phase change memory device including the sameOH JIN-HO·Filed 2013·Granted Oct 15, 2013·4 cites·20 claims
- 0576US6660587B2Method for forming a gate electrode in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 9, 2003·19 cites·10 claims
- 0672US7629218B2Method of manufacturing a capacitor and method of manufacturing a semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 8, 2009·5 cites·18 claims
- 0768US8735215B2Method of manufacturing variable resistance memory devicePARK JEONG-HEE·Filed 2011·Granted May 27, 2014·3 cites·19 claims
- 0865US7592227B2Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 22, 2009·2 cites·22 claims
- 0965US6905927B2Method for forming a gate electrode in a semiconductor device including re-oxidation for restraining the thickness of the gate oxideSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 14, 2005·10 cites·19 claims
- 1060US5854095ADual source gas methods for forming integrated circuit capacitor electrodesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Dec 29, 1998·27 cites·28 claims
- 1154US6534400B2Method for depositing a tungsten silicide layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 18, 2003·4 cites·16 claims
- 1254US2015017797A1Method of manufacturing semiconductor device including metal-containing conductive lineSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1350US5963805AMethod for forming integrated circuit capacitors including dual layer electrodesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Oct 5, 1999·13 cites·33 claims
- 1450US2011155985A1Phase change structure, and phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 1550US2013075909A1Semiconductor device including metal-containing conductive line and method of manufacturing the samePARK JAE-HWA·Filed 2012·Application pending·0 cites
- 1646US2007176225A1Semiconductor device and method of manufacturing the sameLEE SANG-HOON·Filed 2007·Application pending·0 cites
- 1740US8778728B2Methods of manufacturing non-volatile phase-change memory devicesCHOI BYOUNG-DEOG·Filed 2011·Granted Jul 15, 2014·0 cites·18 claims
- 1839US6689659B2Method of making semiconductor memory device having a floating gate with a rounded edgeSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 10, 2004·3 cites·16 claims
- 1938US2005153513A1Method of forming a dielectric layer for a non-volatile memory cell and method of forming a non-volatile memory cell having the dielectric layerFiled 2004·Application pending·0 cites
- 2037US2007085207A1Pad structure, method of forming a pad structure, semiconductor device having a pad structure and method of manufacturing a semiconductor deviceLEE WOO-SUNG·Filed 2006·Application pending·0 cites
- 2133US2002072197A1Method for self-aligned shallow trench isolation and method of manufacturing non-volatile memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Application pending·0 cites
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